Abstract:
The present invention relates to silane adducts having a relatively higher adhesive strength as expressed formula X3SiR1, and manufacturing method thereof. wherein X is a hydrogenated form selected from one of epoxy compounds, amino compounds and bisphenolic, and R1 is selected from one of glycidyloxypropyl group, 2-(3,4-epoxycyclohexyl)ethyl group, 3-acryloxypropyl group, 3-methacryloxypropyl group, amino-propyl group, 3-[2-(2-aminoethylamino)ethylamino]propyl group, N-methylaminopropyl group, N-phenylaminopropyl group, N,N-dimethyl-3-aminopropyl group, mercapto-propyl group, cyano-propyl group, and isocyanato-propyl group.
Abstract:
A surface treatment method for increasing adhesion of a surface of copper foil to an insulating epoxy-impregnated substrate used in printed circuit boards is provided. The method includes nodularizing a surface of an electrolytic copper foil, surface-treating the surface of the nodularized electrolytic copper foil by Zn—As alloy electrodeposition to form a Zn—As composite layer thereon, and coating the surface of the surface-treated electrolytic copper foil with a silane coupling agent mixture, whose compounding ratio of 3-aminopropyltriethoxysilane with respect to vinyltriethoxysilane is between 6:4 and 9:1. This method is very effective to prevent discoloration of copper foil caused by oxidation and the like.
Abstract:
A dicing die adhesive film for semiconductor of the present invention has a 3-layered structure including a first adhesive layer attached on the back of a semiconductor wafer; a second adhesive layer attached onto the first adhesive layer; and a dicing film attached onto the second adhesive layer, and therefore has an advantage that it can ensure reliability of the semiconductor packaging process since it may prevent the die-flying phenomenon and the poor pickup of the die in the dicing process and maintain a sufficient adhesive force between the die and the substrate upon die boding.
Abstract:
A multifunctional die attachment film used in a semiconductor packaging process includes a first die attachment film attached to a surface of a wafer having fine circuit patterns and solder bump patterns and having a first adhesive strength; and a second die attachment film attached on the first die attachment film and having a second adhesive strength with a wafer, a die chip, PCB and a flexible board, and the multifunctional die attachment film serves as a backgrinding tape in a backgrinding process, and after the backgrinding process is completed, the multifunctional die attachment film is not removed, but is used to attach a die chip to a connection member. And, the present invention utilizes the die attachment film as a backgrinding tape in the backgrinding process and concurrently a wafer protection means in a wafer dicing process, thereby preventing sawing burr, scratches or cracks.
Abstract:
An adhesive film for semiconductor is disclosed. The present invention provides an adhesive film for semiconductor used in semiconductor packaging, comprising an adhesive layer, wherein the adhesive layer has surface tension of 19 to 52 erg/cm at 60 ° C. Accordingly, the adhesive film for semiconductor according to the present invention may prevent bubbles from being formed between the adhesive film and a supporting member by controlling surface tension in an optimum condition, and also obtain higher reliability in use of the adhesive film in the semi-conductor packaging by controlling tackiness and adhesive force in an optimum condition.
Abstract:
A dicing die adhesive film for semiconductor of the present invention has a 3-layered structure including a first adhesive layer attached on the back of a semiconductor wafer; a second adhesive layer attached onto the first adhesive layer; and a dicing film attached onto the second adhesive layer, and therefore has an advantage that it can ensure reliability of the semiconductor packaging process since it may prevent the die-flying phenomenon and the poor pickup of the die in the dicing process and maintain a sufficient adhesive force between the die and the substrate upon die boding.