公开(公告)号：US06233451B1

公开(公告)日：2001-05-15

申请号：US09115096

申请日：1998-07-13

Applicant: Anthony Noerpel ,  Chandra Joshi ,  Michael Parr ,  Zhengping Gao ,  Stephanie Demers

Inventor： Anthony Noerpel ,  Chandra Joshi ,  Michael Parr ,  Zhengping Gao ,  Stephanie Demers

IPC: H04Q720

CPC classification number: H04B7/2125 ,  H04B7/18517 ,  H04B7/18539 ,  H04B7/18543 ,  H04B7/18558 ,  H04B7/18567 ,  H04B7/18571 ,  H04B7/1858 ,  H04B7/18582 ,  H04B7/19 ,  H04B7/2041 ,  H04W28/14 ,  H04W52/0203 ,  H04W52/0216 ,  H04W72/0413 ,  H04W72/042 ,  H04W74/00 ,  H04W76/10 ,  H04W76/25 ,  H04W80/00 ,  H04W84/06 ,  Y02D70/1222 ,  Y02D70/164 ,  Y02D70/20 ,  Y02D70/446

Abstract: An access terminal for initiating spot beam selection in a satellite communication system, in which the access terminal includes a receiver for measuring the received signal strength (RSS) of a multiplicity of radio frequency communication spot beam links. The access terminal is further provided with a microcontroller for comparing the received signal strengths from each of the multiplicity of spot beams to initiate information communication via a communication channel of the satellite communication system. In a described embodiment, the controller of the access terminal compares seven spot beam links to determine whether to initiate information communication with one of the seven spot beams received. Additionally, a memory coupled to the controller of the access terminal is used for storing spot beam identification information including the spot beam links assigned to the access terminal via the satellite communication system. The selection procedure employed by the system and method described facilitate a rapid selection of an appropriate spot beam identified from the multiplicity of radio frequency spot beam links received at a mobile access terminal.

Abstract translation: 一种用于在卫星通信系统中发起点波束选择的接入终端，其中接入终端包括用于测量多个射频通信点波束链路的接收信号强度（RSS）的接收机。 接入终端还设置有微控制器，用于比较来自多个点波束中的每一个的接收信号强度，以通过卫星通信系统的通信信道发起信息通信。 在所描述的实施例中，接入终端的控制器比较七个点波束链路，以确定是否发起与所接收的七个点波束中的一个的信息通信。 此外，耦合到接入终端的控制器的存储器用于存储包括经由卫星通信系统分配给接入终端的点波束链路的点波束识别信息。 所述系统采用的选择过程和方法有助于快速选择从在移动接入终端处接收的多个射频点波束链路识别的适当的点波束。

公开(公告)号：US08236571B2

公开(公告)日：2012-08-07

申请号：US11827175

申请日：2007-07-10

Applicant: John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele

Inventor： John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele

IPC: G01N21/00

CPC classification number: B81C1/00246 ,  B81B2201/0214 ,  B81C2203/075 ,  Y10S436/805

Abstract: A method of producing a precursor, active-matrix, fluid-assay micro-structure including the steps of (1) utilizing low-temperature TFT and Si technology, establishing preferably on a glass or plastic substrate a matrix array of non-functionalized pixels, and (2) preparing at least one of these pixels for individual, digitally-addressed (a) functionalization, and (b) reading out, ultimately, of completed assay results.

Abstract translation: 一种制备前体，活性基质，流体测定微结构的方法，包括以下步骤：（1）利用低温TFT和Si技术，优选在玻璃或塑料基材上建立非官能化像素的矩阵阵列， 和（2）准备用于个体，数字寻址（a）功能化的这些像素中的至少一个，以及（b）最终读出完成的测定结果。

公开(公告)号：US07902088B2

公开(公告)日：2011-03-08

申请号：US12249911

申请日：2008-10-11

Applicant: Pooran Chandra Joshi ,  Jiandong Huang ,  Apostolos T. Voutsas

Inventor： Pooran Chandra Joshi ,  Jiandong Huang ,  Apostolos T. Voutsas

IPC: H01L21/31 ,  H01L21/469 ,  H01J1/62 ,  H01J63/04

CPC classification number: C23C16/308 ,  B82Y20/00 ,  C23C16/28 ,  C23C16/505 ,  H01L31/0352 ,  H01L31/035236

Abstract: A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiOXNY film for luminescence (electroluminescence—EL and photoluminescence—PL) applications. The method provides a bottom electrode, and deposits a Si nanoparticle embedded non-stoichiometric SiOXNY film, where (X+Y 0), overlying the bottom electrode. The Si nanoparticle embedded SiOXNY film is annealed. The annealed Si nanoparticle embedded SiOXNY film has an extinction coefficient (k) of less than about 0.001 as measured at 632 nanometers (nm), and a PL quantum efficiency (PLQE) of greater than 20%.

Abstract translation: 提供了一种用于制造用于发光（电致发光 - EL和光致发光 - PL）应用的高量子效率硅（Si）纳米颗粒嵌入的SiOXNY膜的方法。 该方法提供底部电极，并沉积嵌入非化学计量的SiOXNY膜的Si纳米颗粒，其中（X + Y <2和Y> 0）覆盖在底部电极上。 Si纳米颗粒嵌入的SiOXNY膜退火。 退火的Si纳米颗粒嵌入的SiOXNY膜具有在632纳米（nm）下测量的小于约0.001的消光系数（k），并且PL量子效率（PLQE）大于20％。

公开(公告)号：US20090232449A1

公开(公告)日：2009-09-17

申请号：US12112767

申请日：2008-04-30

Applicant: Hao Zhang ,  Pooran Chandra Joshi ,  Apostolos T. Voutsas

Inventor： Hao Zhang ,  Pooran Chandra Joshi ,  Apostolos T. Voutsas

IPC: G02B6/26 ,  B05D5/06 ,  C23C14/48 ,  C23C14/16 ,  C23F1/00

CPC classification number: C23C16/30 ,  C23C16/56 ,  H01L21/02156 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/02362 ,  H01L21/31608

Abstract: An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Er+ ions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.

Abstract translation: 提出了一种铒（Er）掺杂的硅（Si）纳米晶体嵌入式氧化硅（SiOx）波导及其制造方法。 该方法提供底层，并且形成覆盖底层的掺​​铒Si纳米晶体的包含SiOx的薄膜波导，在约1540纳米（nm）处具有最小的光衰减。 然后，形成覆盖Er掺杂的SiOx膜的顶层。 通过使用高密度等离子体化学气相沉积（HDPCVD）方法沉积富硅氧化物（SRSO）膜并退火SRSO膜来形成Er掺杂的SiOx膜。 在注入Er +离子后，再次对Er掺杂的SiOx膜进行退火。 掺铒Si纳米晶SiOx膜的第一折射率（n）在1.46〜2.30的范围内。 顶层和底层具有小于第一折射率的第二折射率。

公开(公告)号：US07544625B2

公开(公告)日：2009-06-09

申请号：US11418273

申请日：2006-05-04

Applicant: Pooran Chandra Joshi ,  Tingkai Li ,  Yoshi Ono ,  Apostolos T. Voutsas ,  John W. Hartzell

Inventor： Pooran Chandra Joshi ,  Tingkai Li ,  Yoshi Ono ,  Apostolos T. Voutsas ,  John W. Hartzell

IPC: H01L21/31

CPC classification number: H01L21/31608 ,  C23C16/30 ,  C23C16/401 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0234

Abstract: A method is provided for forming a silicon oxide (SiOx) thin-film with embedded nanocrystalline silicon (Si). The method deposits SiOx, where x is in the range of 1 to 2, overlying a substrate, using a high-density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, the SiOx thin-film is embedded with nanocrystalline Si. The HD PECVD process may use an inductively coupled plasma (ICP) source, a substrate temperature of less than about 400° C., and an oxygen source gas with a silicon precursor. In one aspect, a hydrogen source gas and an inert gas are used, where the ratio of oxygen source gas to inert gas is in the range of about 0.02 to 5. The SiOx thin-film with embedded nanocrystalline Si typically has a refractive index in the range of about 1.6 to 2.2, with an extinction coefficient in the range of 0 to 0.5.

Abstract translation: 提供了一种用嵌入式纳米晶硅（Si）形成氧化硅（SiOx）薄膜的方法。 该方法使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺沉积SiO x，其中x在1至2的范围内，覆盖在衬底上。 结果，SiO x薄膜埋入有纳米晶体Si。 HD PECVD工艺可以使用电感耦合等离子体（ICP）源，小于约400℃的衬底温度，以及具有硅前体的氧源气体。 一方面，使用氢源气体和惰性气体，其中氧源气体与惰性气体的比例在约0.02至5的范围内。具有嵌入的纳米晶体硅的SiO x薄膜通常具有折射率 约1.6至2.2的范围，消光系数在0至0.5的范围内。

公开(公告)号：US20090033207A1

公开(公告)日：2009-02-05

申请号：US12249911

申请日：2008-10-11

Applicant: Pooran Chandra Joshi ,  Jiandong Huang ,  Apostolos T. Voutsas

Inventor： Pooran Chandra Joshi ,  Jiandong Huang ,  Apostolos T. Voutsas

IPC: H01J1/63 ,  B05D5/12

CPC classification number: C23C16/308 ,  B82Y20/00 ,  C23C16/28 ,  C23C16/505 ,  H01L31/0352 ,  H01L31/035236

Abstract: A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiOXNY film for luminescence (electroluminescence—EL and photoluminescence—PL) applications. The method provides a bottom electrode, and deposits a Si nanoparticle embedded non-stoichiometric SiOXNY film, where (X+Y 0), overlying the bottom electrode. The Si nanoparticle embedded SiOXNY film is annealed. The annealed Si nanoparticle embedded SiOXNY film has an extinction coefficient (k) of less than about 0.001 as measured at 632 nanometers (nm), and a PL quantum efficiency (PLQE) of greater than 20%.

Abstract translation: 提供了一种用于制造用于发光（电致发光 - EL和光致发光 - PL）应用的高量子效率硅（Si）纳米颗粒嵌入的SiOXNY膜的方法。 该方法提供底部电极，并沉积嵌入非化学计量的SiOXNY膜的Si纳米颗粒，其中（X + Y <2和Y> 0）覆盖在底部电极上。 Si纳米颗粒嵌入的SiOXNY膜退火。 退火的Si纳米颗粒嵌入的SiOXNY膜具有在632纳米（nm）下测量的小于约0.001的消光系数（k），并且PL量子效率（PLQE）大于20％。

公开(公告)号：US20080305566A1

公开(公告)日：2008-12-11

申请号：US12197045

申请日：2008-08-22

Applicant: Jiandong Huang ,  Pooran Chandra Joshi ,  Hao Zhang ,  Apostolos T. Voutsas

Inventor： Jiandong Huang ,  Pooran Chandra Joshi ,  Hao Zhang ,  Apostolos T. Voutsas

IPC: H01L21/00

CPC classification number: C23C16/30 ,  C23C16/24 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/0262 ,  H01L21/31608

Abstract: A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced.

Abstract translation: 提供了一种用于形成具有中间带隙过渡层的硅（Si）纳米晶体嵌入式Si氧化物电致发光（EL）器件的方法。 该方法提供高度掺杂的Si底部电极，并且形成覆盖电极的中带隙电绝缘膜。 在其中X小于2的中间带隙绝缘电介质膜上形成Si纳米晶体嵌入的SiOx膜层，并且透明顶部电极覆盖在Si纳米晶体嵌入的SiOx膜层上。 中间带隙电介质膜的带隙约为Si纳米晶体嵌入的SiOx膜的带隙的一半。 在一个方面，Si纳米晶体嵌入的SiO x膜具有约10电子伏特（eV）的带隙（Eg），并且中带隙绝缘电介质膜具有约5eV的带隙。 通过将高能隧道工艺分成两个较低能量的隧穿步骤，由于大功率热电子引起的潜在损害降低。

公开(公告)号：US07381595B2

公开(公告)日：2008-06-03

申请号：US11139726

申请日：2005-05-26

Applicant: Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  John W. Hartzell

Inventor： Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  John W. Hartzell

IPC: H01L21/00

CPC classification number: H01L29/78642 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/049 ,  H01L21/31612 ,  H01L29/66666 ,  H01L29/6675

Abstract: A method is provided for forming a low-temperature vertical gate insulator in a vertical thin-film transistor (V-TFT) fabrication process. The method comprises: forming a gate, having vertical sidewalls and a top surface, overlying a substrate insulation layer; depositing a silicon oxide thin-film gate insulator overlying the gate; plasma oxidizing the gate insulator at a temperature of less than 400° C., using a high-density plasma source; forming a first source/drain region overlying the gate top surface; forming a second source/drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall, in the gate insulator interposed between the first and second source/drain regions. When the silicon oxide thin-film gate insulator is deposited overlying the gate a Si oxide layer, a low temperature deposition process can be used, so that a step-coverage of greater than 65% can be obtained.

Abstract translation: 提供一种用于在垂直薄膜晶体管（V-TFT）制造工艺中形成低温垂直栅极绝缘体的方法。 该方法包括：形成具有垂直侧壁和顶表面的栅极，覆盖衬底绝缘层; 沉积覆盖栅极的氧化硅薄膜栅极绝缘体; 使用高密度等离子体源在低于400℃的温度下等离子体氧化栅极绝缘体; 形成覆盖所述栅极顶表面的第一源极/漏极区域; 在第一栅极侧壁附近形成覆盖衬底绝缘层的第二源极/漏极区域; 以及在位于第一和第二源极/漏极区之间的栅极绝缘体中形成覆盖第一栅极侧壁的沟道区。 当氧化硅薄膜栅极绝缘体沉积在栅极上覆盖Si氧化物层时，可以使用低温沉积工艺，从而可以获得大于65％的阶梯覆盖率。

公开(公告)号：US20080085559A1

公开(公告)日：2008-04-10

申请号：US11888491

申请日：2007-07-31

Applicant: John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele ,  Andrei Gindilis

Inventor： John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele ,  Andrei Gindilis

IPC: B01J19/12 ,  G01N33/00 ,  G21G5/00

CPC classification number: C12Q1/6813 ,  Y10S436/805

Abstract: A method of performing a fluid-material assay employing a device including at least one active pixel having a sensor with an assay site functionalized for selected fluid-assay material. The method includes exposing the pixel's sensor assay site to such material, and in conjunction with such exposing, and employing the active nature of the pixel, remotely requesting from the pixel's sensor assay site an assay-result output report. The method further includes, in relation to the employing step, creating, relative to the sensor's assay site in the at least one pixel, a predetermined, pixel-specific electromagnetic field environment.

Abstract translation: 使用包括至少一个具有传感器的活性像素的装置进行流体材料测定的方法，所述传感器具有用于所选流体测定材料功能化的测定位点。 该方法包括将像素的传感器测定位点暴露于这种材料，并结合这样的曝光，并采用像素的主动特性，从像素的传感器测定位点远程请求测定结果输出报告。 该方法还包括关于采用步骤，相对于至少一个像素中的传感器的测定位置产生预定的像素特定的电磁场环境。

公开(公告)号：US20080084372A1

公开(公告)日：2008-04-10

申请号：US11827174

申请日：2007-07-10

Applicant: John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele

Inventor： John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele

IPC: G09G3/36

CPC classification number: B01L3/5027 ,  B01L3/502707 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0819 ,  B01L2300/0877 ,  B01L2300/1822 ,  B01L2300/1827

Abstract: A pixel-by-pixel digitally-addressable, pixelated, fluid-assay, active-matrix micro-structure including plural pixels formed preferably on a glass or plastic substrate, wherein each pixel, formed utilizing low-temperature TFT and Si technology, includes (a) at least one functionalized, digitally-addressable assay sensor including at least one functionalized, digitally-addressable assay site which has been affinity-functionalized to respond to a selected, specific fluid-assay material, and (b) disposed operatively adjacent that sensor and its associated assay site, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the sensor and its associated assay site, a selected, ambient, electromagnetic field environment which is structured to assist, selectively and optionally only, in the reading-out of an assay-result response from the assay sensor and assay site.

Abstract translation: 逐像素可数字寻址，像素化，流体测定，包括优选地形成在玻璃或塑料基板上的多个像素的有源矩阵微结构，其中利用低温TFT和Si技术形成的每个像素包括（ a）至少一个功能化的，可数字寻址的测定传感器，其包括至少一个官能化的，可数字寻址的测定位点，其已经被亲和功能化以响应所选择的特定流体测定材料，和（b）可操作地邻近该传感器 以及其相关联的测定位点，可数字寻址和可激励的电磁场创建结构，其可选择性地激励以在传感器及其相关联的测定位点附近产生所选择的环境电磁场环境，其被构造为有选择地辅助 并且可选地仅在从测定传感器和测定位点读出测定结果响应中。