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    STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE
    12.
    发明申请
    STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE 有权
    存储设备的存储设备和操作方法

    公开(公告)号：US20160011807A1

    公开(公告)日：2016-01-14

    申请号：US14640653

    申请日：2015-03-06

    Applicant: Changkyu SEOL ,  Junjin KONG ,  JongHa KIM ,  Hyejeong SO ,  Hong Rak SON ,  Seonghyeog CHOI

    Inventor： Changkyu SEOL ,  Junjin KONG ,  JongHa KIM ,  Hyejeong SO ,  Hong Rak SON ,  Seonghyeog CHOI

    IPC: G06F3/06

    CPC classification number: G11C16/10 ,  G11C7/1006 ,  G11C11/5628 ,  G11C16/102

    Abstract: The operating method of the storage device includes receiving write data to be written at the plurality of memory cells; determining whether the received write data is LSB data to be written at the plurality of memory cells; and encoding the write data according to the determination. The write data is encoded according to the write data when the write data is LSB data to be written at the plurality of memory cells. The write data is encoded according to the write data and encoding data of lower data of the write data to be written at the plurality of memory cells when the write data is not LSB data to be written at the plurality of memory cells.

    Abstract translation: 存储装置的操作方法包括：接收要写入多个存储单元的写入数据; 确定所接收的写入数据是否要被写入所述多个存储器单元的LSB数据; 以及根据确定对写入数据进行编码。 当写入数据是要写入多个存储器单元的LSB数据时，根据写入数据对写入数据进行编码。 当写入数据不是要写入多个存储器单元的LSB数据时，写数据根据写数据和要写入多个存储单元的写数据的较低数据的编码数据进行编码。

    ENCODING PROGRAM DATA BASED ON DATA STORED IN MEMORY CELLS TO BE PROGRAMMED
    13.
    发明申请
    ENCODING PROGRAM DATA BASED ON DATA STORED IN MEMORY CELLS TO BE PROGRAMMED 有权
    根据存储在存储单元中的数据编写程序数据进行编程

    公开(公告)号：US20140115237A1

    公开(公告)日：2014-04-24

    申请号：US14053893

    申请日：2013-10-15

    Applicant: YOUNGGEON YOO ,  JUNJIN KONG ,  CHANGKYU SEOL ,  HONG RAK SON ,  HYUNSEUK YOO

    Inventor： YOUNGGEON YOO ,  JUNJIN KONG ,  CHANGKYU SEOL ,  HONG RAK SON ,  HYUNSEUK YOO

    IPC: G06F12/02

    CPC classification number: G06F12/0246 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0069 ,  G11C16/10 ,  G11C2013/0076

    Abstract: A method of programming data in a nonvolatile memory device comprises receiving program data to be programmed in selected memory cells of the nonvolatile memory device, reading data from the selected memory cells, encoding the program data using at least one encoding scheme selected from among multiple encoding schemes according to a comparison of the program data and the read data, generating flag data including encoding information, and programming the encoded program data and the flag data in the selected memory cells.

    Abstract translation: 一种在非易失性存储器件中编程数据的方法包括：接收要在非易失性存储器件的选定存储器单元中编程的程序数据，从所选择的存储器单元读取数据，使用从多个编码中选择的至少一种编码方案对程序数据进行编码 根据程序数据和读取数据的比较，生成包括编码信息的标志数据，以及对选择的存储单元中的编码程序数据和标志数据进行编程的方案。

    OPERATING METHOD OF MEMORY CONTROLLER AND NONVOLATILE MEMORY DEVICE
    16.
    发明申请
    OPERATING METHOD OF MEMORY CONTROLLER AND NONVOLATILE MEMORY DEVICE 有权
    存储器控制器和非易失性存储器件的操作方法

    公开(公告)号：US20160034349A1

    公开(公告)日：2016-02-04

    申请号：US14713568

    申请日：2015-05-15

    Applicant: SEONGHYEOG CHOI ,  CHANGKYU SEOL ,  JUNJIN KONG ,  YOUNGSUK RA ,  HONG RAK SON

    Inventor： SEONGHYEOG CHOI ,  CHANGKYU SEOL ,  JUNJIN KONG ,  YOUNGSUK RA ,  HONG RAK SON

    IPC: G06F11/10 ,  G11C29/52

    CPC classification number: G06F11/1048 ,  G11C11/5642 ,  G11C29/021 ,  G11C29/028 ,  G11C29/26 ,  G11C2029/0411

    Abstract: A method of operating a nonvolatile memory device including a plurality of memory cells is provided. A default read operation is performed on a page using a default read voltage set to generate default raw data. If error bits of the default raw data are not corrected, a plurality of low-level read operations is performed on the page using a plurality of read voltage sets to generate a plurality of low-level raw data. Each read voltage set is different from the default voltage set. A read voltage set is selected from the plurality of read voltage sets as a starting voltage set, according to each low-level raw data. A high-level read operation using the selected starting voltage set is performed on the page to generate high-level raw data.

    Abstract translation: 提供一种操作包括多个存储单元的非易失性存储器件的方法。 在使用默认读取电压设置的页面上执行默认读取操作以生成默认原始数据。 如果默认原始数据的错误位未被校正，则使用多个读取电压组在页面上执行多个低级读取操作，以生成多个低级原始数据。 每个读取电压设置与默认电压设置不同。 根据每个低级原始数据，从多个读取电压组中选择读取电压设置作为起始电压组。 在页面上执行使用所选择的启动电压设置的高电平读取操作，以生成高级原始数据。

    SEMICONDUCTOR MEMORY SYSTEMS USING REGRESSION ANALYSIS AND READ METHODS THEREOF
    19.
    发明申请
    SEMICONDUCTOR MEMORY SYSTEMS USING REGRESSION ANALYSIS AND READ METHODS THEREOF 有权
    使用回归分析的半导体存储器系统及其读取方法

    公开(公告)号：US20140119124A1

    公开(公告)日：2014-05-01

    申请号：US14062092

    申请日：2013-10-24

    Applicant: Kwanghoon KIM ,  Junjin KONG ,  Changkyu SEOL ,  Hong Rak SON

    Inventor： Kwanghoon KIM ,  Junjin KONG ,  Changkyu SEOL ,  Hong Rak SON

    IPC: G11C16/26

    CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3422 ,  G11C16/349

    Abstract: A memory system includes: a bit counter and a regression analyzer. The bit counter is configured to generate a plurality of count values based on data read from selected memory cells using a plurality of different read voltages, each of the plurality of count values being indicative of a number of memory cells of a memory device having threshold voltages between pairs of the plurality of different read voltages. The regression analyzer is configured to determine read voltage for the selected memory cells based on the plurality of count values using regression analysis.

    Abstract translation: 存储器系统包括：位计数器和回归分析器。 位计数器被配置为基于使用多个不同的读取电压从所选择的存储器单元读取的数据生成多个计数值，多个计数值中的每一个表示具有阈值电压的存储器件的存储单元的数量 在多个不同读取电压的对之间。 回归分析器被配置为使用回归分析来基于多个计数值来确定所选择的存储器单元的读取电压。

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