公开(公告)号：US20090236313A1

公开(公告)日：2009-09-24

申请号：US12052401

申请日：2008-03-20

Applicant: Huatan QIU ,  Woody CHUNG ,  Anirban GUHA ,  David CHEUNG

Inventor： Huatan QIU ,  Woody CHUNG ,  Anirban GUHA ,  David CHEUNG

IPC: H01L21/306 ,  C23F1/02

CPC classification number: H01J37/3244 ,  C23C16/45519 ,  H01J37/32449 ,  H01L21/31138

Abstract: Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.

Abstract translation: 提供了用于等离子体剥离的系统，系统组件和方法。 在一个实施例中，气流分配容座可以具有圆形部分，该圆形部分包括限定接收腔的内表面，形成封闭端的外表面和外表面上的中心点，其具有延伸穿过其中的纵向轴线并且通过接收腔 。 第一和第二开口环提供与等离子体室的流动连通。 所述第二开口环设置在所述第一环和所述中心点之间，并且所述第二开口环的每个开口在所述内表面和所述外表面之间以相对于所述纵向轴线的第二角度延伸，所述纵向轴线小于所述第一角度并具有 直径基本上与相邻开口的直径相同，并且小于第一开口环的开口的直径。

公开(公告)号：US20080061439A1

公开(公告)日：2008-03-13

申请号：US11877488

申请日：2007-10-23

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: H01L23/48

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

公开(公告)号：US07202176B1

公开(公告)日：2007-04-10

申请号：US11011273

申请日：2004-12-13

Applicant: Haruhiro Harry Goto ,  David Cheung ,  Prabhat Kumar Sinha

Inventor： Haruhiro Harry Goto ,  David Cheung ,  Prabhat Kumar Sinha

IPC: H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/02063 ,  C01B3/00 ,  C01B7/20 ,  G03F7/427 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/31138

Abstract: The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.

Abstract translation: 本发明涉及从工件去除不想要的材料的方法。 更具体地，本发明涉及在半导体制造期间剥离光致抗蚀剂材料并从半导体晶片去除蚀刻相关残余物。 方法包括在与惰性气体的下游混合中实施氢等离子体操作。 本发明在剥离抗蚀剂和从Damascene器件中使用的低k电介质材料中去除残余物方面是有效的。

公开(公告)号：US20050156317A1

公开(公告)日：2005-07-21

申请号：US11056459

申请日：2005-02-11

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract translation: 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3 N 2和N 2 O 2的反应制备的。

公开(公告)号：US20050023694A1

公开(公告)日：2005-02-03

申请号：US10924551

申请日：2004-08-24

Applicant: Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

Inventor： Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC: H01L21/302 ,  A01C15/02 ,  A01C17/00 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/48

CPC classification number: H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

Abstract translation: 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

公开(公告)号：US06730593B2

公开(公告)日：2004-05-04

申请号：US09998956

申请日：2001-11-15

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: H01L214763

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract translation: 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

公开(公告)号：US06680420B2

公开(公告)日：2004-01-20

申请号：US09730145

申请日：2000-12-04

Applicant: Ben Pang ,  David Cheung ,  William N. Taylor, Jr. ,  Sebastien Raoux ,  Mark Fodor

Inventor： Ben Pang ,  David Cheung ,  William N. Taylor, Jr. ,  Sebastien Raoux ,  Mark Fodor

IPC: B09B300

CPC classification number: H01J37/32862 ,  B01J19/249 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  C23C16/4405 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract translation: 一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置。 该装置使用RF能量来激发从半导体处理室排出的颗粒物质的成分进入等离子体状态，使得这些组分反应以形成可被泵送通过真空管线的气态产物。 该装置可以包括收集室，该收集室被构造和布置成收集流过该装置的颗粒物质并且阻止颗粒物质从装置中流出。 该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

公开(公告)号：US06562544B1

公开(公告)日：2003-05-13

申请号：US08743628

申请日：1996-11-04

Applicant: David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

Inventor： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

IPC: G03F700

CPC classification number: H01L21/3081 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/0332 ,  Y10S430/151 ,  Y10S438/902

Abstract: This invention provides a method and apparatus for depositing a silicon oxide film over an antireflective layer to reduce footing experienced in the a subsequently applied photoresist layer without substantially altering the optical qualities of the antireflective layer. The invention thereby provides more accurate etching of underlying layers during patterning operations. The invention is also capable of providing more accurate patterning of thin films by reducing inaccuracies caused by excessive etching of photoresist during patterning. Additionally, the film of the present invention may be patterned and used as a mask in the patterning of underlying layers.

Abstract translation: 本发明提供了一种用于在抗反射层上沉积氧化硅膜的方法和装置，以减少随后施加的光致抗蚀剂层中的基础，而基本上不改变抗反射层的光学质量。 因此，本发明在图案化操作期间提供对底层的更精确的蚀刻。 本发明还能够通过减少在图案化期间过度蚀刻光致抗蚀剂所引起的不精确度来提供更精确的薄膜图案化。 此外，本发明的膜可以被图案化并用作下层的图案化中的掩模。

公开(公告)号：US06541282B1

公开(公告)日：2003-04-01

申请号：US09594187

申请日：2000-06-13

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC: H05H102

CPC classification number: H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O; at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

Abstract translation: 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O的反应制备的; 在约10W至约150W的恒定RF功率水平或在占空比的10％至30％期间从约20W至约250W的脉冲RF功率水平。

公开(公告)号：US06395092B1

公开(公告)日：2002-05-28

申请号：US09550151

申请日：2000-04-17

Applicant: Dian Sugiarto ,  Judy Huang ,  David Cheung

Inventor： Dian Sugiarto ,  Judy Huang ,  David Cheung

IPC: C23C1600

CPC classification number: H01L21/02274 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/31625

Abstract: A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF4), a gaseous source of oxygen (such as nitrous oxide), and a gaseous source of nitrogen (such as N2). A plasma is formed from the process gas by applying a RF power component. Deposition is carried out at a rate of at least about 1.5 &mgr;m/min. The resulting FSG film is stable and has a low dielectric constant.

Abstract translation: 首先将工艺气体引入室中，将氧化硅膜沉积在衬底上。 工艺气体包括硅的气体源（例如硅烷），气体的氟源（例如SiF 4），气体的氧源（例如一氧化二氮）和气态的氮源（例如N 2）。 通过施加RF功率分量从处理气体形成等离子体。 以至少约1.5mum / min的速率进行沉积。 所得的FSG膜是稳定的并且具有低的介电常数。