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公开(公告)号：US11353493B2
公开(公告)日：2022-06-07
申请号：US16619847
申请日：2019-07-10
Applicant: KLA-Tencor CORPORATION
Inventor： Shlomit Katz , Roie Volkovich , Anna Golotsvan , Raviv Yohanan
Abstract: A data-driven misregistration parameter configuration and measurement system and method including simulating a plurality of measurement simulations of at least one multilayered semiconductor device, selected from a batch of multilayered semiconductor devices intended to be identical, using sets of measurement parameter configurations, generating simulation data for the device, identifying recommended measurement parameter configurations selected from sets of measurement parameter configurations, providing a multilayered semiconductor device selected from the batch, providing the at least one recommended set of measurement parameter configurations to a misregistration metrology tool having multiple possible sets of measurement parameter configurations, measuring at least one multilayered semiconductor device, selected from the batch, using the recommended set, thereby generating measurement data for the device, thereafter identifying a final recommended set of measurement parameter configurations and measuring misregistration of at least one multilayered semiconductor device, selected from the batch, using the final recommended set.
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公开(公告)号：US11314173B2
公开(公告)日：2022-04-26
申请号：US16672483
申请日：2019-11-03
Applicant: KLA-Tencor Corporation
Inventor： Vladimir Levinski , Yuri Paskover , Amnon Manassen , Yoni Shalibo
Abstract: Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.
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公开(公告)号：US11287248B2
公开(公告)日：2022-03-29
申请号：US16806076
申请日：2020-03-02
Applicant: KLA-Tencor Corporation
Inventor： Guoheng Zhao , Maarten van der Burgt , Sheng Liu , Andy Hill , Johan De Greeve , Karel van Gils
Abstract: For three-dimensional topography measurement of a surface of an object patterned illumination is projected on the surface through an objective. A relative movement between the object and the objective is carried out, and plural images of the surface are recorded through the objective by a detector. The direction of the relative movement includes an oblique angle with an optical axis of the objective. Height information for a given position on the surface is derived from a variation of the intensity recorded from the respective position. Also, patterned illumination and uniform illumination may be projected alternatingly on the surface, while images of the surface are recorded during a relative movement of the object and the objective along an optical axis of the objective. Uniform illumination is used for obtaining height information for specular structures on the surface, patterned illumination is used for obtaining height information on other parts of the surface.
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公开(公告)号：US11281111B2
公开(公告)日：2022-03-22
申请号：US16317603
申请日：2018-12-14
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoni Shalibo , Yuri Paskover , Vladimir Levinski , Amnon Manassen , Shlomo Eisenbach , Gilad Laredo , Ariel Hildesheim
Abstract: Metrology methods and tools are provided, which enhance the accuracy of the measurements and enable simplification of the measurement process as well as improving the correspondence between the metrology targets and the semiconductor devices. Methods comprise illuminating the target in a Littrow configuration to yield a first measurement signal comprising a −1st diffraction order and a 0th diffraction order and a second measurement signal comprising a +1st distraction order and a 0th diffraction order, wherein the −1st diffraction order of the first measurement signal and the +1st diffraction order of the second measurement signal are diffracted at 180° to a direction of the illumination, performing a first measurement of the first measurement signal and a second measurement of the second measurement signal, and deriving metrology metric(s) therefrom. Optionally, a reflected 0th diffraction order may be split to yield components which interact with the −1st and +1st diffraction orders.
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公开(公告)号：US20220084179A1
公开(公告)日：2022-03-17
申请号：US17456415
申请日：2021-11-24
Applicant: KLA-Tencor Corporation
Inventor： Hawren Fang , Abdurrahman Sezginer , Rui-fang Shi
IPC: G06T7/00
Abstract: Disclosed are methods and apparatus for inspecting a photolithographic reticle. A plurality of reference far field images are simulated by inputting a plurality of reference near field images into a physics-based model, and the plurality of reference near field images are generated by a trained deep learning model from a test portion of the design database that was used to fabricate a test area of a test reticle. The test area of a test reticle, which was fabricated from the design database, is inspected for defects via a die-to-database process that includes comparing the plurality of reference far field reticle images simulated by the physic-based model to a plurality of test images acquired by the inspection system from the test area of the test reticle.
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Patent Agency Ranking
公开(公告)号：US11268911B2
公开(公告)日：2022-03-08
申请号：US16413740
申请日：2019-05-16
Applicant: KLA-TENCOR CORPORATION
Inventor： Gildardo R Delgado , Shannon B Hill , Zefram Marks
IPC: H01L27/146 , G01N21/95 , G03F7/16 , H01L31/0216
Abstract: Disclosed herein are optical elements and methods for making the same. Such optical elements may comprise a first layer disposed on a substrate, a second layer disposed on the first layer, a terminal layer disposed on the second layer, and a cap layer disposed on the terminal layer. The cap layer may comprise boron, boron nitride, or boron carbide. Such optical elements may be made using a method comprising depositing a first layer using vapor deposition such that the first layer is disposed on a substrate, depositing a second layer using vapor deposition such that the second layer is disposed on the first layer, depositing a terminal layer using vapor deposition such that the terminal layer is disposed on the second layer, and depositing a cap layer comprising boron, boron nitride, or boron carbide using vapor deposition such that the cap layer is disposed on the terminal layer.
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公开(公告)号：US11257207B2
公开(公告)日：2022-02-22
申请号：US16201788
申请日：2018-11-27
Applicant: KLA-Tencor Corporation
Inventor： Hawren Fang , Abdurrahman Sezginer , Rui-fang Shi
IPC: G06T7/00
Abstract: Disclosed are methods and apparatus for inspecting a photolithographic reticle. A near field reticle image is generated via a deep learning process based on a reticle database image produced from a design database, and a far field reticle image is simulated at an image plane of an inspection system via a physics-based process based on the near field reticle image. The deep learning process includes training a deep learning model based on minimizing differences between the far field reticle images and a plurality of corresponding training reticle images acquired by imaging a training reticle fabricated from the design database, and such training reticle images are selected for pattern variety and are defect-free. A test area of a test reticle, which is fabricated from the design database, is inspected for defects via a die-to-database process that includes comparing a plurality of references images from a reference far field reticle image to a plurality of test images acquired by the inspection system from the test reticle. The reference far field reticle image is simulated based on a reference near field reticle image that is generated by the trained deep learning model.
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公开(公告)号：US11249110B2
公开(公告)日：2022-02-15
申请号：US16679223
申请日：2019-11-10
Applicant: KLA-Tencor Corporation
Inventor： Walter H. Johnson, III , Nanchang Zhu , Xianghua Liu , Jianli Cui , Zhu-bin Shi , Zhuoxian Zhang , Haiyang You , Lu Yu , Jianou Shi , Fan Zhang
Abstract: Resistivity probes can be used to test integrated circuits. In one example, a resistivity probe has a substrate with multiple vias and multiple metal pins. Each of the metal pins is disposed in one of the vias. The metal pins extend out of the substrate. Interconnects provide an electrical connection to the metal pins. In another example, a resistivity probe has a substrate with a top surface and multiple elements extending from the substrate. Each of the elements curves from the substrate to a tip of the element such that each of the elements is non-parallel to the top surface of the substrate.
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公开(公告)号：US11237119B2
公开(公告)日：2022-02-01
申请号：US15835399
申请日：2017-12-07
Applicant: KLA-Tencor Corporation
Inventor： Martin Plihal , Erfan Soltanmohammadi , Saravanan Paramasivam , Sairam Ravu , Ankit Jain , Prasanti Uppaluri , Vijay Ramachandran
IPC: G01N21/95 , H01L21/67 , G05B19/418 , G01N21/88 , G06T7/00 , H01J37/22 , H01J37/28 , G01N23/04 , H01L21/66 , G06N7/00
Abstract: Wafer inspection with stable nuisance rates and defect of interest capture rates are disclosed. This technique can be used for discovery of newly appearing defects that occur during the manufacturing process. Based on a first wafer, defects of interest are identified based on the classified filtered inspection results. For each remaining wafer, the defect classifier is updated and defects of interest in the next wafer are identified based on the classified filtered inspection results.
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公开(公告)号：US11226566B2
公开(公告)日：2022-01-18
申请号：US17161035
申请日：2021-01-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Roie Volkovich , Ido Dolev
Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.
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