公开(公告)号：US6015761A

公开(公告)日：2000-01-18

申请号：US672469

申请日：1996-06-26

Applicant: Walter Richardson Merry ,  William Brown ,  Harald Herchen ,  Michael D. Welch

Inventor： Walter Richardson Merry ,  William Brown ,  Harald Herchen ,  Michael D. Welch

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/00

CPC classification number: H01L21/76807 ,  H01L21/31116 ,  H01L21/76804

Abstract: A microwave-activated plasma process for etching dielectric layers (20) on a substrate (25) with excellent control of the shape and cross-sectional profile of the etched features (40), high etch rates, and good etching uniformity, is described. A process gas comprising (i) fluorocarbon gas (preferably CF.sub.4), (ii) inorganic fluorinated gas (preferably NF.sub.3), and (iii) oxygen, is used. The process gas is introduced into a plasma zone (55) remote from a process zone (60) and microwaves are coupled into the plasma zone (55) to form a microwave-activated plasma. The microwave-activated plasma is introduced into the process zone (60) to etch the dielectric layer (20) on the substrate (25) with excellent control of the shape of the etched features.

Abstract translation: 描述了对蚀刻特征（40）的形状和横截面轮廓具有优异控制，高蚀刻速率和良好的蚀刻均匀性的对基板（25）上的介电层（20）进行蚀刻的微波激活等离子体处理。 使用包含（i）碳氟化合物气体（优选CF 4），（ii）无机氟化气体（优选NF 3）和（iii）氧气）的工艺气体。 将处理气体引入到远离处理区（60）的等离子体区（55）中，并且将微波耦合到等离子体区（55）中以形成微波激活的等离子体。 微波激活的等离子体被引入处理区（60）中，以蚀刻特征的形状的优良控制蚀刻衬底（25）上的电介质层（20）。

公开(公告)号：US07115523B2

公开(公告)日：2006-10-03

申请号：US10391071

申请日：2003-03-18

Applicant: Brigitte C. Stoehr ,  Michael D. Welch ,  Melisa J. Buie

Inventor： Brigitte C. Stoehr ,  Michael D. Welch ,  Melisa J. Buie

IPC: H01L21/302

CPC classification number: H01J37/321 ,  G03F1/30 ,  H01J2237/334 ,  H01L21/31116

Abstract: A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.

公开(公告)号：US06863835B1

公开(公告)日：2005-03-08

申请号：US09557990

申请日：2000-04-25

Applicant: James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B44C1/22 ,  C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

Abstract: A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designs that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump without the need for any deflector in the exhaust channel.

Abstract translation: 一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。 腔室内部和泵之间的排气通道包括一个磁体和至少一个在废气流中产生湍流的偏转器。 由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而充分降低了带电粒子的浓度，使得等离子体和导流板的下游猝灭，从而防止了等离子体在腔室内 从到达排气泵。 磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。 因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。 或者，如果磁场足够强，则单独的磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

公开(公告)号：US06773544B2

公开(公告)日：2004-08-10

申请号：US09775173

申请日：2001-01-31

Applicant: James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: H01L21302

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

Abstract: The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.

Abstract translation: 本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。 能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出 过程区域。 一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。 磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

公开(公告)号：US06716302B2

公开(公告)日：2004-04-06

申请号：US10253496

申请日：2002-09-24

Applicant: James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

Inventor： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC: H05H100

CPC classification number: H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

Abstract translation: 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US06513452B2

公开(公告)日：2003-02-04

申请号：US09841804

申请日：2001-04-24

Applicant: Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

Inventor： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

IPC: C23C1600

CPC classification number: H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

Abstract translation: 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。 在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。

公开(公告)号：US06284093B1

公开(公告)日：2001-09-04

申请号：US09665484

申请日：2000-09-20

Applicant: Kuang-Han Ke ,  Bryan Y. Pu ,  Hongching Shan ,  James Wang ,  Henry Fong ,  Zongyu Li ,  Michael D. Welch

Inventor： Kuang-Han Ke ,  Bryan Y. Pu ,  Hongching Shan ,  James Wang ,  Henry Fong ,  Zongyu Li ,  Michael D. Welch

IPC: H01J100

CPC classification number: H01L21/67126 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3266 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68721 ,  H01L21/68735 ,  H02N13/00 ,  Y10S156/915

Abstract: A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases. In a third aspect, the dielectric shield is thin enough to couple substantial power from the cathode to the plasma, thereby improving spatial uniformity of the plasma process near the perimeter of the workpiece. In a fourth aspect, azimuthal non-uniformities in process performance can be ameliorated by corresponding azimuthal variations in the dimensions of the elevated collar and/or the dielectric shield surrounding the workpiece.

Abstract translation: 围绕等离子体室中的半导体工件的环或环。 根据一个方面，所述环具有提升的套环部分，其内表面以与工件的平面成钝角定向，该角度优选为135°。 这种角度取向导致离子轰击提升的轴环的内表面沿更平行于工件的平面的方向散射，从而减少工件周边处的任何介电屏蔽的侵蚀，并且改善等离子体中的空间不均匀性 由于这种周边附近的任何过量的离子密度而产生的过程。 在第二方面，工件被电介质屏蔽围绕，屏蔽被非介电环覆盖，该绝缘环保护介电屏蔽免受过程气体的反应或腐蚀。 在第三方面中，电介质屏蔽体足够薄以将来自阴极的实质功率耦合到等离子体，从而改善靠近工件周边的等离子体工艺的空间均匀性。 在第四方面，方法性能的方位不均匀性可以通过围绕工件的高架轴环和/或介电屏蔽的尺寸的相应的方位角变化来改善。

公开(公告)号：US06813534B2

公开(公告)日：2004-11-02

申请号：US10081088

申请日：2002-02-20

Applicant: Zhifeng Sui ,  Paul E Luscher ,  Nils Johansson ,  Michael D Welch

Inventor： Zhifeng Sui ,  Paul E Luscher ,  Nils Johansson ,  Michael D Welch

IPC: G06F1900

CPC classification number: H01L21/67253 ,  H01J37/32935 ,  H01J37/32963

Abstract: In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position. The endpoint signal is determined to be true or false by evaluating the process parameter.

Abstract translation: 在具有通电气体的基板处理室中执行的处理的端点检测方法中，检测该处理的过程变量。 所述过程变量包括以下中的至少一个：（i）由所述通电气体发射的辐射，（ii）从所述室中的衬底反射的辐射，（iii）所述通电气体的反射功率水平，以及（iv） 在房间里 当过程变量指示过程的终点时，发出端点信号。 还检测该过程的过程参数，该过程参数包括以下中的至少一个：（i）源功率，（ii）RF正向功率，反射功率或匹配分量，（iii）RF峰 - 峰 电压，电流或相位，（iv）DC偏置电平，（v）腔室压力或节流阀位置，（vi）气体组成或流速，（vii）衬底温度或组成，（viii） 腔室部件或壁，以及（ix）磁限制水平或磁体位置。 通过评估过程参数将端点信号确定为真或假。

公开(公告)号：US06797639B2

公开(公告)日：2004-09-28

申请号：US10254969

申请日：2002-09-24

Applicant: James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

Inventor： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC: H01L2100

CPC classification number: H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

公开(公告)号：US06647918B1

公开(公告)日：2003-11-18

申请号：US09711191

申请日：2000-11-13

Applicant: Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

Inventor： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

IPC: C23C1600

CPC classification number: H01L21/67011 ,  H01J37/32458 ,  H01J2237/186 ,  Y10S156/916 ,  Y10S414/139

Abstract: In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

Abstract translation: 在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。 内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性 通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。 内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道 门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。