Abstract:
To improve manufacture of an electronic circuit, the electronic circuit is composed of modules of sub-circuits arranged on a common substrate, such as a cooling body, and that are electrically interconnected by a planar electrical contact element.
Abstract:
In an arrangement having at least one substrate, at least one electrical component is disposed on a surface section of the substrate and is provided with an electrical contact area, and at least one electrical contact lug has an electrical connecting area electrically contacting the contact area of the component. The connecting area of the contact lug and the contact area of the component are interconnected so that at least one zone of the contact lug protrudes beyond the area of the component. The contact lug is provided with at least one electrically conducting film while the electrically conducting film is provided with the electrical connecting area of the contact lug. The arrangement is particularly useful for large-area, low-inductive contacting of power semiconductor chips, as it allows for high current density.
Abstract:
A film, based on polyimide or epoxy, is laminated onto a surface of a substrate under a vacuum, so that the film closely covers the surface and adheres thereto. Contact surfaces to be formed on the surface are uncovered by opening windows in the film. A contact is established in a plane manner between each uncovered contact surface and a layer of metal. This establishes a large-surface contact providing high current density for power semiconductor chips.
Abstract:
A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.
Abstract:
A bi-directional switch has at least one first controllable semiconductor component with a first input contact, a first output contact, and a first control contact, and at least one second controllable semiconductor component with a second input contact, a second output contact, and a second control contact. The first input contact of the first semiconductor component and the second input contact of the second semiconductor component are interconnected in an electrically conducting manner, and the first control contact of the first semiconductor component and the second control contact of the second semiconductor component are interconnected in an electrically conducting manner while the first output contact of the first semiconductor component and the second output contact of the second semiconductor component are electrically insulated from each other. The semiconductor components are disposed on a common substrate that is provided with an electrically conducting coating. At least one of said semiconductor components of the switch is arranged on the electrically conducting coating in such a way that a joint contact area corresponding to at least 60 percent of the surface of the contact, which faces the coating, is created between the coating and said surface of the contact, which faces the coating. Said arrangement makes it possible to create a low-impedance, low-inductive bi-directional switch.
Abstract:
The present invention relates to waveguides, e.g., waveguides in a dielectricwall accelerator, and to methods for the manufacture thereof. For example, planar contact electronic assemblies may be integrated in a waveguide e.g., a waveguide of an accelerator cell of a dielectricwall accelerator.
Abstract:
At least one bearing body in a power semiconductor module has a surface section on which a first semiconductor component and at least one additional semiconductor component are arranged adjacent to each other. The semiconductor components have contact surfaces, oriented away from the surface section of the bearing body, that are in a contact in a planar manner to provide a flat connection line between the contact surfaces of the semiconductor components. The flat connection line has a lower inductivity and a lower instance dependency of inductivity compared to a bonding wire. A distance between the semiconductor components along the surface section is greater than a lateral measurement of at least one of the semiconductor components and can be, selectively, relatively large, allowing for thermal and/or temperature expansion and a lower thermal load of the semiconductor module than previously obtained.
Abstract:
In an arrangement having at least one substrate, at least one electrical component is disposed on a surface section of the substrate and is provided with an electrical contact area, and at least one electrical contact lug has an electrical connecting area electrically contacting the contact area of the component. The connecting area of the contact lug and the contact area of the component are interconnected so that at least one zone of the contact lug protrudes beyond the area of the component. The contact lug is provided with at least one electrically conducting film while the electrically conducting film is provided with the electrical connecting area of the contact lug. The arrangement is particularly useful for large-area, low-inductive contacting of power semiconductor chips, as it allows for high current density.
Abstract:
A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.
Abstract:
A device with power semiconductor components controlling the power of high currents has each power semiconductor component insulated and fixed to a common cooled carrier body. Conductor bars, in addition to the power semiconductor components, are fixed to the carrier body, the conductor bars being electrically insulated and placed on top of each other, whereby each semiconductor bar has a free contact surface, and one electrical contact surface of each semiconductor component is electrically connected to a conductor bar by one or several electric conductor bridges and another electrical contact surface of the power semiconductor component is electrically connected to another bar conductor by one or several conductor bridges.