公开(公告)号：US09942991B2

公开(公告)日：2018-04-10

申请号：US14872910

申请日：2015-10-01

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L21/50 ,  H01L21/56 ,  H01L23/48 ,  H05K3/30 ,  H05K3/28 ,  H01F27/24 ,  H01L23/31 ,  H01L23/36 ,  H01L23/373 ,  H01L23/498 ,  H05K3/46 ,  H05K1/18

Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.

公开(公告)号：US09936578B2

公开(公告)日：2018-04-03

申请号：US14517002

申请日：2014-10-17

Applicant: RF Micro Devices, Inc.

Inventor： Thong Dang ,  Mohsen Haji-Rahim ,  Mark Charles Held

IPC: H05K7/00 ,  H05K1/11 ,  H01L23/552 ,  H01L23/00 ,  H05K1/18 ,  H05K9/00 ,  H01L23/31 ,  H05K3/28

CPC classification number: H05K1/111 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/552 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/245 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/8201 ,  H01L2224/82031 ,  H01L2224/82101 ,  H01L2224/82136 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/1421 ,  H01L2924/1434 ,  H01L2924/1443 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15787 ,  H01L2924/19105 ,  H05K1/185 ,  H05K3/284 ,  H05K9/0022 ,  H05K2201/0715 ,  H05K2201/10439 ,  Y10T29/49016 ,  Y10T29/49117 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49155 ,  H01L2224/82 ,  H01L2924/014 ,  H01L2924/00

Abstract: A shielded electronic module is formed on a substrate. The substrate has a component area and one or more electronic components attached to the component area. One set of conductive pads may be attached to the component area and another set of conductive pads may be provided on the electronic component. The conductive pads on the component area are electrically coupled to the conductive pads of the electronic component by a conductive layer. A first insulating layer is provided over the component area and underneath the conductive layer that may insulate the electronic component and the substrate from the conductive layer. A second insulating layer is provided over the first insulating layer that covers at least the conductive layer. In this manner, the conductive layer is isolated from an electromagnetic shield formed over the component area.

公开(公告)号：US09935670B2

公开(公告)日：2018-04-03

申请号：US14497919

申请日：2014-09-26

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat

IPC: H04B1/44 ,  H04B1/40 ,  H04L5/14 ,  H04B1/00 ,  H04B15/00 ,  H04L5/08 ,  H04B7/0413

CPC classification number: H04B1/40 ,  H04B1/0057 ,  H04B7/0413 ,  H04B15/00 ,  H04L5/08 ,  H04L5/14

Abstract: RF front-end circuitry, which includes RF switching and duplexing circuitry, a first RF diplexer, and a second RF diplexer, is disclosed. The RF switching and duplexing circuitry operates in one of a group of RF transmit modes, such that the group of RF transmit modes includes at least one transmit uplink carrier aggregation mode. The RF switching and duplexing circuitry provides at least one RF transmit signal based on the one of the group of RF transmit modes. The first RF diplexer is coupled between the RF switching and duplexing circuitry and a primary RF antenna. The second RF diplexer is coupled between the RF switching and duplexing circuitry and an auxiliary RF antenna.

公开(公告)号：US09917080B2

公开(公告)日：2018-03-13

申请号：US13871526

申请日：2013-04-26

Applicant: RF Micro Devices, Inc.

Inventor： Andrew P. Ritenour

IPC: H01L29/66 ,  H01L27/06 ,  H01L27/02 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L27/0629 ,  H01L27/0248 ,  H01L29/2003 ,  H01L29/778

Abstract: A semiconductor device with electrical overstress (EOS) protection is disclosed. The semiconductor device includes a semi-insulating layer, a first contact disposed onto the semi-insulating layer, and a second contact disposed onto the semi-insulating layer. A passivation layer is disposed onto the semi-insulating layer. The passivation layer has a dielectric strength that is greater than that of the semi-insulating layer to ensure that a voltage breakdown occurs within the semi-insulating layer within a semi-insulating region between the first contact and the second contact before a voltage breakdown can occur in the passivation layer.

公开(公告)号：US09912307B2

公开(公告)日：2018-03-06

申请号：US15074121

申请日：2016-03-18

Applicant: RF Micro Devices, Inc.

Inventor： Timothy D. Lewis

IPC: H03F9/02 ,  H03F3/21 ,  H01F17/00 ,  H01F27/28 ,  H01F27/38

CPC classification number: H03F3/211 ,  H01F17/0006 ,  H01F27/2804 ,  H01F27/289 ,  H01F27/38 ,  H03F2200/537

Abstract: Devices and related methods use a decoupling loop near closely spaced inductors that couples to each inductor and adds an additional coupling path between them, canceling the effects of the direct coupling between the inductors. When two inductors are close enough that undesired magnetic coupling between the inductors is possible, a decoupling loop adjacent the inductors is added that is configured to cancel the undesired magnetic coupling between the inductors. The decoupling loop is positioned, with respect to the first and second inductors, such that coupling between the decoupling loop and the first inductor induces a decoupling loop current around the decoupling loop and induces a second induced current on the second inductor that is equal and in an opposite direction to a first induced current on the second inductor caused by the first inductor. The undesired magnetic coupling between the conductors is reduced, and may even be totally cancelled.

公开(公告)号：US09906354B2

公开(公告)日：2018-02-27

申请号：US14254343

申请日：2014-04-16

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat

IPC: H04L5/14 ,  H04B1/00 ,  H04B1/10 ,  H04L5/08

CPC classification number: H04L5/1461 ,  H04B1/006 ,  H04B1/0064 ,  H04B1/1027 ,  H04B2001/1072 ,  H04L5/08 ,  H04L5/14

Abstract: The disclosure includes communication circuitry with a tunable filter configured to tunably filter in a split band. In a first embodiment, communication circuitry includes a tunable filter and a first additional filter. The communication circuitry is configured to communicate within a low target band and within a high target band, wherein an exclusion band is located between the low target band and the high target band. The tunable filter is configured to filter within a low tunable band when tuned within the low tunable band, and configured to filter within a high tunable band when tuned within the high tunable band. The first additional filter is configured to filter in a first additional filter band located in an upper edge of the low target band.

公开(公告)号：US09893709B2

公开(公告)日：2018-02-13

申请号：US14673192

申请日：2015-03-30

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Marcus Granger-Jones

IPC: H03H7/46 ,  H03H9/70 ,  H03H7/01 ,  H01P5/22 ,  H03H9/72 ,  H04B1/525 ,  H04B1/58

CPC classification number: H03H7/46 ,  H01P5/22 ,  H01P5/227 ,  H03H7/0138 ,  H03H7/463 ,  H03H9/706 ,  H03H9/725 ,  H04B1/525 ,  H04B1/58

Abstract: RF circuitry, which includes a first hybrid RF coupler, a second hybrid RF coupler, a third hybrid RF coupler, and RF filter circuitry, is disclosed. The first hybrid RF coupler provides a first main port, a first pair of quadrature ports, and an isolation port. The second hybrid RF coupler provides a second main port and a second pair of quadrature ports. The third hybrid RF coupler provides a third main port and a third pair of quadrature ports. RF filter circuitry is coupled to the first pair of quadrature ports, the second pair of quadrature ports, and the third pair of quadrature ports. The first main port, the second main port, and the third main port provide main ports of the RF triplexer. The isolation port is a common port of the RF triplexer for coupling to an RF antenna.

公开(公告)号：US09871499B2

公开(公告)日：2018-01-16

申请号：US14554943

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/40 ,  H01F17/00 ,  H03F1/56 ,  H03F3/24 ,  H03H7/38

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F1/565 ,  H03F3/245 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/1708 ,  H03H7/1716 ,  H03H7/1766 ,  H03H7/1775 ,  H03H7/40 ,  H03H2007/386

Abstract: Radio frequency (RF) filter structures and related methods and RF front-end circuitry are disclosed. In one embodiment, an RF filter structure includes a first terminal and a first tunable RF filter path defined between the first terminal and a second terminal. The first tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a first frequency. The first frequency may be provided within a first frequency band. Additionally, the RF filter structure includes a second tunable RF filter path defined between the first terminal and the second terminal. The second tunable RF filter path is tunable to provide impedance matching between the first terminal and the second terminal at a second frequency. The second frequency may be within a second frequency band. In this manner, the RF filter structure is configured to provide impedance tuning for multiple impedance bands simultaneously.

公开(公告)号：US09865922B2

公开(公告)日：2018-01-09

申请号：US14465142

申请日：2014-08-21

Applicant: RF Micro Devices, Inc.

Inventor： Daniel Charles Kerr ,  Christian Rye Iversen ,  Eric K. Bolton ,  Ruediger Bauder ,  Nadim Khlat

IPC: H01Q5/328 ,  H01Q5/335

CPC classification number: H01Q5/328 ,  H01Q5/335

Abstract: Antenna tuning circuitry includes an antenna tuning node, an antenna tuning switch, and a resonant tuning circuit. The antenna tuning node is coupled to a resonant conduction element of an antenna. The antenna tuning switch and the resonant tuning circuit are coupled in series between the antenna tuning switch and the antenna tuning node, such that the resonant tuning circuit is between the antenna tuning node and the antenna tuning switch. The resonant tuning circuit is configured to resonate at one or more harmonic frequencies generated by the antenna tuning switch such that a high impedance path is formed between the antenna tuning switch and the antenna tuning node at harmonic frequencies generated by the antenna tuning switch. Accordingly, harmonic interference generated by the antenna tuning switch is prevented from reaching the antenna, while simultaneously allowing for tuning of the antenna.

公开(公告)号：US09859863B2

公开(公告)日：2018-01-02

申请号：US14554975

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/46 ,  H03H7/09 ,  H01F17/00 ,  H03F3/195 ,  H03F3/24 ,  H03F3/68

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/168 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/463

Abstract: Radio frequency (RF) front-end circuitry that includes control circuitry and an RF filter structure that includes a plurality of resonators are disclosed. In one embodiment, a first tunable RF filter path is defined by a first set of the plurality of resonators such that the first tunable RF filter path has a first amplitude and a first phase. A second tunable RF filter path is defined by a second set of the plurality of resonators such that the second tunable RF filter path has a second amplitude and a second phase. To provide antenna diversity and/or beam forming/beam steering, the control circuitry is configured to set a first amplitude difference between the first amplitude and the second amplitude to approximately a first target amplitude difference and set a first phase difference between the first phase and the second phase to approximately a first target phase difference.