摘要:
A layout method of decoupling capacitors while ensuring the decoupling capacitance necessary for each grid area. The method includes calculating the total power consumption of logic cells, arranging the decoupling capacitance throughout the subject area in correspondence with the total power consumption, dividing the subject area into a plurality of grid areas, arranging the logic cells in each grid area, determining whether the decoupling capacitance is sufficient in each grid area for the logic cells in that grid area, and performing a supplementing process of the decoupling capacitance based on whether the decoupling capacitance is sufficient.
摘要:
A semiconductor device includes both a logic circuit and a macro circuit. The macro circuit includes a circuit that consumes direct current (DC). In order to conserve power and allow for testing, the consumption of DC by the current consumption circuit can be stopped with a stop signal, which stops the operation of the macro circuit. The macro circuit can be restarted or returned to normal operation mode without risk of error caused by the stopping of the macro circuit.
摘要:
A DC-DC converter for generating power supply voltage differing from input voltage, while operating a semiconductor circuit at a predetermined speed regardless of differences between devices or changes in the operation environment. An output voltage control circuit compares an oscillation signal, which is provided from a ring oscillator of the semiconductor circuit, with a triangular wave signal, which is provided from an oscillator of the DC-DC converter, and changes the output voltage of the DC-DC converter in accordance with the comparison result. This substantially equalizes the oscillation signal of the ring oscillator with the triangular wave signal, which functions as a reference signal, and operates the semiconductor circuit at a speed that is in accordance with the triangular wave signal.
摘要:
A layout method of decoupling capacitors while ensuring the decoupling capacitance necessary for each grid area. The method includes calculating the total power consumption of logic cells, arranging the decoupling capacitance throughout the subject area in correspondence with the total power consumption, dividing the subject area into a plurality of grid areas, arranging the logic cells in each grid area, determining whether the decoupling capacitance is sufficient in each grid area for the logic cells in that grid area, and performing a supplementing process of the decoupling capacitance based on whether the decoupling capacitance is sufficient.
摘要:
The present invention is made to resolve problems of the above described prior art. Prime object of the present invention is to provide an oscillator circuit capable of outputting oscillation signal with stable oscillation frequency, a semiconductor device and a semiconductor memory device provided with the oscillator circuit, and control method of the oscillator circuit. For achieving the prime object, there are taken the following countermeasures at the time of initiating oscillation where the inventive oscillator circuit can control to operate/stop oscillation. That is, the countermeasures to be taken are: (1) oscillation operation is stopped or an output of an oscillation signal is not permitted while transient oscillation frequency is unstable; or (2) a period that transient oscillation frequency is unstable is shortened.
摘要:
There is intended to provide a semiconductor integrated circuit device capable of lowering the power consumption during data-write operation, enhancing operation speed, and reducing noises for stable operation. In the semiconductor integrated circuit, an active signal ACT to be inputted to a sense amplifier signal circuit SC1 is latched by a command latch circuit and outputted to a terminal N11. The terminal N11 outputs a control signal EDC1 via a timing adjusting circuit. The control signal EDC1 works to output a sense amplifier activating signal LE via a timing adjusting circuit and output buffer circuit and at the same time, the control signal EDC1 is outputted to a column switch signal circuit CS1. From the Column switch signal circuit CS1, a pulse signal is outputted via input of a control signal ACL, a pulse output circuit, and a terminal N13. In a logical circuit, AND processing is conducted between the pulse signal and an inversion signal of the control signal EDC1. Through a decode circuit, a resultant signal is outputted as switch signal CL, or CLM.
摘要:
In a semiconductor memory device which is intended to lower the power consumption and raise the operation speed without increasing the circuit scale to meet trends toward the larger capacity, higher speed and, at the same time, the lower power voltage design, the precharge circuit Pre3 has its bit line shorting section formed of transistors TN1A and TN1B in series connection and its bit line voltage holding circuit formed of transistors TN2A and TN2B connected in series between the node of the transistors TN1A and TN1B and a precharge voltage VPR source, with the transistors TN1A and TN2A and the TN1B and TN2B being controlled by precharge signals BRS0 and BRS1, respectively. One of the precharge signals BRS0 and BRS1 is preset active since the former precharge operation cycle, the other precharge signal is activated to start the shorting operation of a bit line pair /BL-BL, and the preset precharge signal is deactivated to end the shorting operation.
摘要:
A flash-erasable semiconductor memory device comprises a memory cell array including a plurality of memory cell transistors each having an insulated floating gate for storing information and a control electrode provided on said floating gate, wherein the flash-erasable semiconductor memory device includes a write control circuit supplied with a write control signal, when writing information. The write control circuit produces a control signal such that a leading edge of the drain control signal appears after a leading edge of the gate control signal. Further, the gate control circuit shuts off the gate control signal such that a trailing edge of the gate control signal appears after a trailing edge of the drain control signal.
摘要:
A flash memory performs channel erasing or source erasing by applying a negative voltage to a control gate. The device includes a voltage restriction device which restricts the negative voltage to be applied to the control gate so that the negative voltage will be a constant value relative to the voltage of the channel or source. Alternatively, two voltage restricting devices restrict the negative voltage applied to the control gate and the voltage to be applied to the source so that the voltages will be a constant value relative to a common reference voltage.
摘要:
The present invention relates to improvements in erasing a flash memory. An object of the present invention is to shorten the erasing time. During pre-erase writing, at least either word lines or bit lines are selected in units of multiple lines at a time, and data are written in multiple selective transistors simultaneously.