Dynamic Refresh Rate Control
    12.
    发明公开

    公开(公告)号:US20240119991A1

    公开(公告)日:2024-04-11

    申请号:US18488656

    申请日:2023-10-17

    Applicant: Apple Inc.

    Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

    Dynamic Refresh Rate Control
    13.
    发明申请

    公开(公告)号:US20210201987A1

    公开(公告)日:2021-07-01

    申请号:US17182341

    申请日:2021-02-23

    Applicant: Apple Inc.

    Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

    Dynamic Refresh Rate Control
    14.
    发明申请

    公开(公告)号:US20210020231A1

    公开(公告)日:2021-01-21

    申请号:US16515351

    申请日:2019-07-18

    Applicant: Apple Inc.

    Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

    Temperature control loop for integrated circuit

    公开(公告)号:US11822399B2

    公开(公告)日:2023-11-21

    申请号:US17387376

    申请日:2021-07-28

    Applicant: Apple Inc.

    CPC classification number: G06F1/206 G06F1/08 G06F11/3058

    Abstract: A temperature control apparatus is disclosed. An integrated circuit (IC) includes a plurality of temperature sensors, a first thermal control loop, and a second thermal control loop. The first thermal control loop is configured to control temperature of the IC by reducing a frequency of a clock signal provided to the IC in response to a temperature at one of the plurality of temperature sensors reaching a first temperature threshold. The second thermal control loop is configured to control temperature of the IC by dithering the clock signal provided to the IC in response to a temperature at one of the plurality of temperature sensors reaching a second temperature threshold that is greater than the first temperature threshold.

    Dynamic refresh rate control
    19.
    发明授权

    公开(公告)号:US11270753B2

    公开(公告)日:2022-03-08

    申请号:US17182341

    申请日:2021-02-23

    Applicant: Apple Inc.

    Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

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