CHEMICAL MECHANICAL POLISHING PAD WITH INTERNAL CHANNELS
    12.
    发明申请
    CHEMICAL MECHANICAL POLISHING PAD WITH INTERNAL CHANNELS 审中-公开
    具有内部通道的化学机械抛光垫

    公开(公告)号:US20160101500A1

    公开(公告)日:2016-04-14

    申请号:US14695778

    申请日:2015-04-24

    CPC classification number: B24B37/26 B24B37/015 B24B55/02

    Abstract: A polishing pad for chemical mechanical polishing is provided. The polishing pad includes a base region having a supporting surface. The polishing pad further includes a plurality of polishing features forming a polishing surface, the polishing surface opposing the supporting surface. The polishing pad further includes one or more channels formed in an interior region of the polishing pad and extending at least partly around a center of the polishing pad, wherein each channel is fluidly coupled to at least one port.

    Abstract translation: 提供了用于化学机械抛光的抛光垫。 抛光垫包括具有支撑表面的基底区域。 抛光垫还包括形成抛光表面的多个抛光特征,抛光表面与支撑表面相对。 抛光垫还包括形成在抛光垫的内部区域中并且至少部分地围绕抛光垫的中心延伸的一个或多个通道,其中每个通道流体地联接到至少一个端口。

    SITU SENSING OF SURFACE CONDITION FOR POLISHING PADS

    公开(公告)号:US20230125502A1

    公开(公告)日:2023-04-27

    申请号:US17512555

    申请日:2021-10-27

    Abstract: Embodiments described herein generally relate to a surface topology measurement device that enables mapping a surface profile of a polishing pad. Embodiments of the disclosure may include a method of measuring and/or adjusting a property of a polishing surface of a polishing pad disposed in a substrate processing system during processing or after one or more processes have been performed. The method can include positioning a surface topology measurement device such that the surface topology measurement device contacts the polishing surface of the polishing pad, generating a three-dimensional surface map of the polishing surface of the polishing pad, comparing the three-dimensional surface map of the polishing surface of the polishing pad to a predetermined threshold, and adjusting one or more properties of the substrate processing system based on the comparison of the three-dimensional surface map to the predetermined threshold.

    POLISHING PADS HAVING IMPROVED PORE STRUCTURE

    公开(公告)号:US20220362904A1

    公开(公告)日:2022-11-17

    申请号:US17321694

    申请日:2021-05-17

    Abstract: Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A method of forming a polishing pad includes (a) dispensing droplets of a pre-polymer composition and droplets of a sacrificial material composition onto a surface of a previously formed print layer according to a predetermined droplet dispense pattern. The method includes (b) at least partially curing the dispensed droplets of the pre-polymer composition to form a print layer. The method includes (c) sequentially repeating (a) and (b) to form a polishing layer having a plurality of pore-features formed therein. The pre-polymer composition includes a multifunctional acrylate component. A curing rate of the dispensed droplets of the pre-polymer composition including the multifunctional acrylate component when exposed to a first dose of electromagnetic radiation is greater than a curing rate of the pre-polymer composition without the multifunctional acrylate component when exposed to the same first dose of electromagnetic radiation.

    STRUCTURES FORMED USING AN ADDITIVE MANUFACTURING PROCESS FOR REGENERATING SURFACE TEXTURE IN SITU

    公开(公告)号:US20220250203A1

    公开(公告)日:2022-08-11

    申请号:US17172152

    申请日:2021-02-10

    Abstract: Embodiments of the present disclosure generally relate to structures formed using an additive manufacturing process, and more particularly, to polishing pads, and methods for manufacturing polishing pads, which may be used in a chemical mechanical polishing (CMP) process. The structures described herein are formed from a plurality of printed layers. The structure comprises a first material domain having a first material composition and a plurality of second material domains having a second material composition different from the first material composition. The first material domain is configured to have a first rate of removal and the plurality of second material domains are configured to have a different second rate of removal when an equivalent force is applied to a top surface of the first material domain and the plurality of second material domains.

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