公开(公告)号：US10219888B2

公开(公告)日：2019-03-05

申请号：US11455112

申请日：2006-06-19

申请人： Ikuo Morita ,  Akiko Kobayashi ,  Hideshi Hattori ,  Masatoshi Kuroda

发明人： Ikuo Morita ,  Akiko Kobayashi ,  Hideshi Hattori ,  Masatoshi Kuroda

IPC分类号： A61F2/02 ,  A61L27/38 ,  A61L27/58 ,  C12N5/071 ,  A61L27/36 ,  B82Y30/00 ,  C12N5/00 ,  A61K35/12

摘要： In accordance with the present invention, an implant in which cells are arranged in a fine pattern that is available for immediate implantation and that does not need to be removed after implantation is provided. The present invention relates to a cell-containing sheet, which comprises cells and a support comprising a bioabsorbable material, in which the support has a cell adhesion protein-containing layer on the surface thereof and the cells form a pattern on the support.

公开(公告)号：US6143077A

公开(公告)日：2000-11-07

申请号：US905766

申请日：1997-08-04

申请人： Kei Ikeda ,  Akiko Kobayashi

发明人： Kei Ikeda ,  Akiko Kobayashi

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45572

摘要： A source gas delivery system 4 which delivers the source gas to the surface of the heated substrate 20 is furnished with a gas delivery guide 44 of a shape such that the distance from the substrate 20 becomes narrower either gradually on in steps from the edge of the gas delivery port 443 on the same axis as the substrate 20 toward the outer edge, and delivers the source gas in such a way that the thickness distribution of the boundary layer which is the region in the vicinity of the surface of the substrate 20 where the velocity of the flow of source gas along the surface of the substrate is essentially zero is almost constant or gradually becomes narrower in the direction of the flow.

摘要翻译： 将源气体输送到加热的基板20的表面的源气体输送系统4配备有气体输送引导件44，其形状使得从基板20的距离逐渐变窄， 气体输送口443在与基板20相同的轴上朝向外边缘，并且以这样的方式输送源气体，使得作为基板20的表面附近的区域的边界层的厚度分布 源气体沿着衬底表面的流动速度基本上为零，几乎是恒定的或在流动方向上逐渐变窄。

公开(公告)号：US5993679A

公开(公告)日：1999-11-30

申请号：US72559

申请日：1998-05-05

申请人： Tomoaki Koide ,  Akiko Kobayashi ,  Ko Sang Tae ,  Atsushi Sekiguchi ,  Osamu Okada

发明人： Tomoaki Koide ,  Akiko Kobayashi ,  Ko Sang Tae ,  Atsushi Sekiguchi ,  Osamu Okada

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23G5/00 ,  C23F1/02

CPC分类号： C23C16/45572 ,  C23C16/4405 ,  C23C16/4557 ,  C23G5/00

摘要： A method of cleaning metallic films built up within a thin film deposition apparatus is disclosed. The method includes an oxidation step to oxidize the metallic film and produce a film of the oxide thereof, a complexing step to complex the oxide film and produce a complex thereof, and a sublimation step to sublimate the complex. The conditions of these cleaning steps are set so that the oxidation step is the rate-determining step.

摘要翻译： 公开了一种清洗在薄膜沉积设备内构建的金属膜的方法。 该方法包括氧化步骤以氧化金属膜并产生其氧化物的膜，使复合氧化膜并产生其复合物的络合步骤和升华步骤使复合物升华。 这些清洗步骤的条件被设定为氧化步骤是速率确定步骤。

公开(公告)号：US10378106B2

公开(公告)日：2019-08-13

申请号：US12618355

申请日：2009-11-13

申请人： Akiko Kobayashi ,  Akira Shimizu ,  Nobuyoshi Kobayashi ,  Woo-Jin Lee

发明人： Akiko Kobayashi ,  Akira Shimizu ,  Nobuyoshi Kobayashi ,  Woo-Jin Lee

IPC分类号： C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  C23C16/455 ,  H05H1/24

摘要： A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

公开(公告)号：US08647722B2

公开(公告)日：2014-02-11

申请号：US12618419

申请日：2009-11-13

申请人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

发明人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

IPC分类号： H05H1/24

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/56

摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.

摘要翻译： 基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理 使用已经被等离子体激活的处理气体形成膜。

公开(公告)号：US20100221890A1

公开(公告)日：2010-09-02

申请号：US12557981

申请日：2009-09-11

申请人： Akiko Kobayashi ,  Shinya Kawamoto

发明人： Akiko Kobayashi ,  Shinya Kawamoto

IPC分类号： H01L21/762 ,  H01L21/28

CPC分类号： H01L21/76229 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11573

摘要： In forming an element isolation trench, an insulating film formed above a semiconductor substrate is etched such that relatively thin insulating film situated in the memory cell region is fully removed whereas relatively thick insulating film situated in the peripheral circuit region is etched so as to leave a remainder insulating film. Then, using the remainder insulating film in the peripheral circuit region as an etch stopper, the semiconductor substrate is etched, whereafter the remainder insulating film in the peripheral circuit region is fully removed to subsequently etch the semiconductor substrate.

摘要翻译： 在形成元件隔离沟槽时，蚀刻形成在半导体衬底之上的绝缘膜，使得位于存储单元区域中的相对薄的绝缘膜被完全去除，而位于外围电路区域中的相对较厚的绝缘膜被蚀刻以便留下 剩余绝缘膜。 然后，使用外围电路区域中的剩余绝缘膜作为蚀刻停止层，对半导体衬底进行蚀刻，然后完全除去外围电路区域中剩下的绝缘膜，随后蚀刻半导体衬底。

公开(公告)号：US20100136313A1

公开(公告)日：2010-06-03

申请号：US12326000

申请日：2008-12-01

申请人： Akira Shimizu ,  Akiko Kobayashi ,  Suvi Haukka

发明人： Akira Shimizu ,  Akiko Kobayashi ,  Suvi Haukka

IPC分类号： C23C16/34 ,  B32B9/00 ,  C01B33/00

CPC分类号： C23C16/34 ,  C01B33/00 ,  C23C16/45531

摘要： A process for forming metallic nitride film by atomic layer deposition (ALD), which comprises steps for feeding into a reaction space vapor phase alternated pulses of metal source material and silicon source material in a plurality of cycles, and feeding into the reaction space vapor phase pulses of nitrogen source material. wherein a nitrogen source pulse is fed intermittently in selected cycles such that a ratio of nitrogen source pulses to silicon source pulses is less than 1:1 and a ratio of nitrogen source pulses to metal source pulses is less than 1:1, the ratio selected to produce the thin film with a resistivity between 1,000 μΩcm and 15,000 μΩcm.

摘要翻译： 一种用于通过原子层沉积（ALD）形成金属氮化物膜的方法，包括以多个循环的方式将金属源材料和硅源材料的交替脉冲进入反应空间的步骤，并将其进料到反应空间气相 脉冲氮源材料。 其中氮源脉冲以选定的循环间歇地进给，使得氮源脉冲与硅源脉冲的比例小于1:1，并且氮源脉冲与金属源脉冲的比率小于1:1，选择的比率 以产生电阻率在1000μΩ-OHgr·cm和15000μ＆OHgr·cm之间的薄膜。

公开(公告)号：US06726954B2

公开(公告)日：2004-04-27

申请号：US09874066

申请日：2001-06-06

申请人： Minjuan Zhang ,  Akiko Kobayashi ,  Toshiaki Sasaki ,  Susumu Akiyama ,  Atsushi Sekiguchi

发明人： Minjuan Zhang ,  Akiko Kobayashi ,  Toshiaki Sasaki ,  Susumu Akiyama ,  Atsushi Sekiguchi

IPC分类号： C23C1618

CPC分类号： C23C16/45523 ,  C23C16/18 ,  C23C16/4402 ,  H01L21/28556

摘要： In a method and a system for forming a copper thin film in which a raw material gas is introduced into a substrate processing chamber storing a substrate and being under a reduced pressure to form a copper thin film on the substrate, an addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued. Alternatively, an addition gas is introduced into the substrate processing chamber before the start of the deposition process, and the addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued.

摘要翻译： 在形成铜薄膜的方法和系统中，其中原料气体被引入存储基板并在减压下的基板处理室中，以在基板上形成铜薄膜，将加成气体引入 基板处理室除了在沉积的初始阶段的原料气体之外。 此后，停止引入加料气体，同时继续引入原料气体。 或者，在开始沉积处理之前，将添加气体引入到基板处理室中，并且在沉积的初始阶段除了原料气体之外还将添加气体引入基板处理室。 此后，停止引入加料气体，同时继续引入原料气体。

公开(公告)号：US5991782A

公开(公告)日：1999-11-23

申请号：US991880

申请日：1997-12-16

申请人： Junichi Miyagawa ,  Akiko Kobayashi ,  Tetsuharu Haraguchi ,  Yukio Sakaguchi ,  Akira Hirashima ,  Makoto Shinka ,  Yukio Uro ,  Yoshinori Hosono

发明人： Junichi Miyagawa ,  Akiko Kobayashi ,  Tetsuharu Haraguchi ,  Yukio Sakaguchi ,  Akira Hirashima ,  Makoto Shinka ,  Yukio Uro ,  Yoshinori Hosono

IPC分类号： G06F17/24

CPC分类号： G06F17/24

摘要： When a content to be partialized is specified to a document, the document creation supporting system records the content of the part in a file separated from the document together with a part holding mark, adds a part reference mark at the position where the part is specified in the document and deletes the content of the part from the document in order to be able to readily confirm the consistency of the part and version number when the document is updated and to be able to confirm contents of documents among a plurality of documents.

摘要翻译： 当对文档指定要被部分化的内容时，文档创建支持系统将与文档分离的文件中的部分的内容与部分保持标记一起记录在部分指定的位置处添加零件参考标记 并且从文档中删除该部分的内容，以便能够在更新文档时容易地确认部分和版本号的一致性，并且能够确认多个文档中的文档的内容。

公开(公告)号：US20100178423A1

公开(公告)日：2010-07-15

申请号：US12353076

申请日：2009-01-13

申请人： Akira Shimizu ,  Akiko Kobayashi ,  Hiroki Kanayama

发明人： Akira Shimizu ,  Akiko Kobayashi ,  Hiroki Kanayama

IPC分类号： C23C16/455 ,  F17D1/16

CPC分类号： F17D1/16 ,  C23C16/45544 ,  C23C16/45561 ,  Y10T137/0396

摘要： A method for controlling flow and concentration of a liquid precursor includes: supplying a carrier gas to a first auto-pressure regulator and outputting therefrom the carrier gas at a first pressure to a precursor reservoir; outputting the mixture of the vaporized precursor and the carrier gas from the precursor reservoir; and supplying the mixture to a second auto-pressure regulator and outputting therefrom the mixture at a second pressure to a reactor via an orifice.

摘要翻译： 用于控制液体前体的流动和浓缩的方法包括：将载气供应到第一自动压力调节器，并将载体气体以第一压力从其输出到前体储存器; 从前体储存器输出蒸发的前体和载气的混合物; 以及将所述混合物供应到第二自动压力调节器，并且通过孔口将所述混合物以第二压力从所述反应器输出。