公开(公告)号：US08716146B2

公开(公告)日：2014-05-06

申请号：US13541397

申请日：2012-07-03

申请人： Gregory Nowling ,  John Foster

发明人： Gregory Nowling ,  John Foster

IPC分类号： H01L21/302

CPC分类号： H01L21/31111 ,  H01L21/67086 ,  H01L29/6653

摘要： Provided are methods for processing semiconductor substrates. The methods involve etching silicon nitride structures using phosphoric acid solutions maintained at low temperatures, such as between about 110° C. and 130° C. These temperatures provide adequate etching rates and do not damage surrounding metal silicide and silicon oxide structures. The etching rates of silicon nitride may be 10 Angstroms per minute and greater. Lower temperatures also allow decreasing concentrations of phosphoric acid in the etching solutions, which in some embodiments may be less than 90 weight percent. As a result, more selective etching of the silicon nitride structures may be achieved. This selectivity may be as high as hundred times relative to the silicide and silicon oxide structures. The surface conductivity of the silicide structures may remain substantially unchanged by this etching process.

摘要翻译： 提供了用于处理半导体衬底的方法。 该方法包括使用保持在低温（例如约110℃至130℃）之间的磷酸溶液来蚀刻氮化硅结构。这些温度提供足够的蚀刻速率，并且不会损坏周围的金属硅化物和氧化硅结构。 氮化硅的蚀刻速率可以为每分钟10埃或更高。 较低的温度也允许蚀刻溶液中磷酸的浓度降低，在一些实施方案中磷酸的浓度可以小于90重量％。 结果，可以实现对氮化硅结构的更多的选择性蚀刻。 相对于硅化物和氧化硅结构，该选择性可高达百倍。 通过该蚀刻工艺，硅化物结构的表面电导率可以保持基本不变。

公开(公告)号：US20130203245A1

公开(公告)日：2013-08-08

申请号：US13564071

申请日：2012-08-01

申请人： Joanna WASYLUK ,  Stephan KRONHOLZ ,  Berthold Reimer ,  Sven Metzger ,  Gregory Nowling ,  John Foster ,  Paul Besser

发明人： Joanna WASYLUK ,  Stephan KRONHOLZ ,  Berthold Reimer ,  Sven Metzger ,  Gregory Nowling ,  John Foster ,  Paul Besser

IPC分类号： H01L21/20

CPC分类号： H01L21/02057 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/76232 ,  H01L21/823807 ,  H01L21/823878

摘要： A method for fabricating an integrated circuit from a semiconductor substrate having formed thereon over a first portion of the semiconductor substrate a hard mask layer and having formed thereon over a second portion of the semiconductor substrate an oxide layer. The first portion and the second portion are electrically isolated by a shallow trench isolation feature. The method includes removing the oxide layer from over the second portion and recessing the surface region of the second portion by applying an ammonia-hydrogen peroxide-water (APM) solution to form a recessed surface region. The APM solution is provided in a concentration of ammonium to hydrogen peroxide ranging from about 1:1 to about 1:0.001 and in a concentration of ammonium to water ranging from about 1:1 to about 1:20. The method further includes epitaxially growing a silicon-germanium (SiGe) layer on the recessed surface region.

摘要翻译： 一种用于从半导体衬底制造集成电路的方法，其中半导体衬底的第一部分上形成有硬掩模层，并且在半导体衬底的第二部分上形成氧化物层。 第一部分和第二部分由浅沟槽隔离特征电隔离。 该方法包括通过施加氨 - 过氧化氢 - 水（APM）溶液以形成凹入的表面区域，从第二部分上方去除氧化物层并使第二部分的表面区域凹陷。 提供APM溶液的浓度为约1：1至约1：0.001的过氧化氢，铵浓度为约1：1至约1:20的水。 该方法还包括在凹表面区域上外延生长硅 - 锗（SiGe）层。

公开(公告)号：US08314022B1

公开(公告)日：2012-11-20

申请号：US13112832

申请日：2011-05-20

申请人： John Foster ,  Kim Van Berkel

发明人： John Foster ,  Kim Van Berkel

IPC分类号： H01L21/3205

CPC分类号： H01L29/78 ,  H01L21/28114 ,  H01L21/31111 ,  H01L21/32134 ,  H01L29/42376 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66477

摘要： A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the gate stack. The wet etch process includes submersing the substrate with the gate stack in an aqueous solution composed of a wet etchant and an oxidizer, removing the substrate from the solution and rinsing the solution from the etched gate stack.

摘要翻译： 提供了蚀刻金属栅极叠层的方法。 该方法包括在衬底上形成栅极堆叠，其中栅极堆叠包括金属栅极。 在栅极堆叠上执行湿蚀刻工艺。 湿蚀刻工艺包括将具有栅极堆叠的衬底浸入由湿蚀刻剂和氧化剂组成的水溶液中，从溶液中除去衬底并从蚀刻的栅极堆叠中冲洗溶液。

公开(公告)号：US20110300059A1

公开(公告)日：2011-12-08

申请号：US13133776

申请日：2009-12-08

申请人： Suling Zhai ,  John Foster ,  Stephen Ward ,  Malcolm Harrison

发明人： Suling Zhai ,  John Foster ,  Stephen Ward ,  Malcolm Harrison

IPC分类号： C01B17/04 ,  B01J19/00

CPC分类号： C01B17/0413 ,  B01D53/50 ,  B01D53/52 ,  B01D53/8609 ,  B01D53/8612 ,  B01D2255/20707 ,  B01D2255/20738 ,  B01D2255/2092 ,  B01D2258/06 ,  C01B17/04 ,  C01B17/0404 ,  C01B17/0439

摘要： A process for treating a gas stream comprising hydrogen sulphide, the process comprising the steps of: (i) mixing a first gas stream comprising hydrogen sulphide with a second stream comprising sulphur dioxide to produce a combined stream, whereby elemental sulphur is produced by a reaction between the hydrogen sulphide and the sulphur dioxide; (ii) removing elemental sulphur, and optionally water, from the combined stream; and (iii) oxidising at least some of the elemental sulphur to form sulphur dioxide for use in the second stream, wherein, the reaction is conducted at a temperature of from 15 to 155° C. and a pressure of at least 3 MPa.

摘要翻译： 一种用于处理包含硫化氢的气流的方法，该方法包括以下步骤：（i）将包含硫化氢的第一气流与包含二氧化硫的第二流混合以产生组合流，由此通过反应产生元素硫 在硫化氢和二氧化硫之间; （ii）从组合的流中除去元素硫和任选的水; 和（iii）氧化至少一些元素硫以形成用于第二流中的二氧化硫，其中反应在15至155℃的温度和至少3MPa的压力下进行。

公开(公告)号：US07305935B1

公开(公告)日：2007-12-11

申请号：US10925499

申请日：2004-08-25

申请人： John Foster

发明人： John Foster

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C14/357 ,  H01J27/18 ,  H01J37/077 ,  H01J37/08 ,  H01J37/32422 ,  H01J37/32678 ,  H01J2237/0041 ,  H01J2237/06366 ,  H01J2237/3114 ,  H01J2237/31701 ,  H05H1/46

摘要： A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster applications, ion implantation, and related applications. This slotted antenna plasma source invention operates on the principle of electron cyclotron resonance (ECR). It employs no window and it is completely electrodeless and therefore its operation lifetime is long, being limited only by either the microwave generator itself or charged particle extraction grids if used. The high density plasma source can also be used to extract an electron beam that can be used as a plasma cathode neutralizer for ion source beam neutralization applications.

摘要翻译： 已经证明通过使用无窗无电极矩形开槽天线波导等离子体源的微波注入产生的高密度等离子体。 等离子探头测量表明，该源可适用于低功率离子推进器应用，离子注入和相关应用。 这种开槽天线等离子体源发明以电子回旋共振（ECR）为原则。 它没有窗户，它是完全无电极的，因此其使用寿命长，仅受微波发生器本身或带电粒子提取网格的限制（如果使用）。 高密度等离子体源还可用于提取可用作离子源光束中和应用的等离子体阴极中和器的电子束。

公开(公告)号：US20050003631A1

公开(公告)日：2005-01-06

申请号：US10866123

申请日：2004-06-12

申请人： Patrick Feierabend ,  Richard Martin ,  Jeffery Summers ,  Andrew Wallis ,  Paul Rubel ,  John Foster ,  John Stocker

发明人： Patrick Feierabend ,  Richard Martin ,  Jeffery Summers ,  Andrew Wallis ,  Paul Rubel ,  John Foster ,  John Stocker

IPC分类号： G02B6/35 ,  H01L21/30 ,  H01L21/44 ,  H01L29/06

CPC分类号： B81C3/008 ,  G02B6/3512 ,  G02B6/3518 ,  G02B6/353 ,  G02B6/3546 ,  G02B6/3572 ,  G02B6/3578 ,  G02B6/3584 ,  G02B6/3586 ,  Y10T29/41

摘要： The invention describes a method and apparatus for deploying micromachined actuators in a plane which is orthogonal to the original fabrication plane of the devices. Using batch-processing, photolithographic procedures known in the micromachined electro-mechanical system (MEMS) art, a plurality of devices is constructed on a suitable substrate. The devices are then separated one from another by sawing and dicing the original fabrication wafer. The devices are rotated into an orthogonal orientation and affixed to a second wafer. The second wafer also contains circuitry for addressing and manipulating each of the devices independently of the others. With this method and apparatus, arrays of actuators are constructed whose plane of actuation is perpendicular to the plane of the array. This invention is useful for constructing N×M fiber optic switches, which direct light from N input fibers into M output fibers.

摘要翻译： 本发明描述了一种用于在与装置的原始制造平面正交的平面中展开微机械加工的致动器的方法和装置。 利用微加工机电系统（MEMS）技术中已知的分批处理，光刻工艺，多个器件被构造在合适的衬底上。 然后通过锯切和切割原始制造晶片来将器件彼此分离。 将装置旋转成正交取向并固定到第二晶片。 第二晶片还包含用于独立于其它装置寻址和操纵每个装置的电路。 利用这种方法和装置，构造致动器阵列，其致动平面垂直于阵列的平面。 本发明对于构造NxM光纤开关是有用的，其将来自N个输入光纤的光引导到M个输出光纤中。

公开(公告)号：US5702574A

公开(公告)日：1997-12-30

申请号：US505322

申请日：1996-05-03

申请人： John Foster ,  Alan Taylor ,  Martin Patrick Chatterley

发明人： John Foster ,  Alan Taylor ,  Martin Patrick Chatterley

IPC分类号： C25D5/02 ,  C25D5/12 ,  C25D15/02 ,  C25D17/06 ,  F01D5/20 ,  F01D25/28

CPC分类号： F01D25/285 ,  C25D15/02 ,  C25D17/06 ,  C25D5/02 ,  F01D11/12

摘要： A method of and apparatus for producing abrasive tips on compressor or turbine rotor blades by electrolytic or electroless deposition in which the blades are mounted in a hollow jig with the tips of the blades extending through sealed openings in the jig and abrasive tips are formed on the tips. The parts of the blades within the hollow jig are isolated from the electrolyte without the need for wax masking. Preferably the jig is cylindrical with the blades extending radially through at least one circumferential row of apertures. The jig may comprise two end discs and at least one ring in which a circumferential row of apertures is formed. The ring is positioned between the end discs and means are provided for securing the discs and ring together.

摘要翻译： PCT No.PCT / GB94 / 02777 Sec。 371日期：1996年5月3日 102（e）日期1996年5月3日PCT 1994年12月21日PCT PCT。 第WO95 / 17535号公报 日期1995年6月29日一种用于通过电解或无电沉积在压缩机或涡轮转子叶片上产生磨料尖端的方法和设备，其中叶片安装在中空夹具中，其中叶片的尖端延伸穿过夹具中的密封开口和磨料 技巧是在技巧上形成的。 中空夹具内的叶片的部分与电解质分离，而不需要蜡掩蔽。 优选地，夹具是圆柱形的，其中叶片径向延伸穿过至少一个圆周排的孔。 夹具可以包括两个端盘和至少一个环，其中形成有圆周排的孔。 环位于端盘之间，并且提供用于将盘和环固定在一起的装置。

公开(公告)号：US4567767A

公开(公告)日：1986-02-04

申请号：US610352

申请日：1984-05-14

申请人： Clavin F. Quate ,  John Foster ,  Daniel Rugar

发明人： Clavin F. Quate ,  John Foster ,  Daniel Rugar

IPC分类号： G01H3/12 ,  G01N29/06 ,  G01S15/89 ,  G01N29/04

CPC分类号： G01N29/0681 ,  G01H3/125 ,  G01S15/8906 ,  G01N2291/02881 ,  Y10S505/842

摘要： A method and apparatus for imaging objects utilizing acoustic waves at frequencies above 4.2 Ghz and up to 8 Ghz wherein the transducer and the object imaged by waves or beams from the transducer are both at a temperature no greater 0.2.degree. K. The transducer is driven by pulses generated by a short pulse generator which are stretched and coded by a dispersive filter and inductively coupled to a low temperature coupler to be use to drive the transducer. The frequency returns are carried by the same bidirectional coupler to a low noise amplifier. Both the low noise amplifier and bidirectional coupler are maintained at a temperature of less than 4.2.degree. K. The output of the amplifier is then coupled to a dispersive filter which responds the coding in the first dispersive filter to decode the information and reconstruct the signal. Subsurface defects are detected by heating the object while it is inspected by the acoustic transducer.

摘要翻译： 使用高于4.2Ghz和高达8Ghz的声波的成像物体的方法和装置，其中换能器和由换能器的波或者波束成像的物体都处于不大于0.2°K的温度。换能器由 由短脉冲发生器产生的脉冲，其由色散滤波器拉伸和编码，并且感应耦合到低温耦合器以用于驱动换能器。 频率返回由相同的双向耦合器承载到低噪声放大器。 低噪声放大器和双向耦合器都保持在小于4.2°K的温度。然后，放大器的输出耦合到色散滤波器，其响应第一色散滤波器中的编码以对信息进行解码并重构信号。 在通过声换能器检查物体时加热物体来检测地下缺陷。

公开(公告)号：US3974104A

公开(公告)日：1976-08-10

申请号：US340941

申请日：1973-03-14

申请人： John Foster ,  Vallabhbhai Bhanabhai Ahir

发明人： John Foster ,  Vallabhbhai Bhanabhai Ahir

IPC分类号： A61C13/007 ,  A61C13/01 ,  A61K6/083 ,  C09K3/00

CPC分类号： A61K6/083 ,  Y10S528/92

摘要： A radio opaque denture base formed of a copolymer of an ethylenically unsaturated monomer containing chemically bound tin together with at least one ethylenically unsaturated monomer, the ethylenically unsaturated monomer containing chemically bound tin being an ester of trialkyl tin and an ethylenically unsaturated acid such as tributyl tin ethacrylate. In a preferred embodiment the copolymer is a novel copolymer derived from two ethylenically unsaturated tin containing monomers one of which is trimethyl tin methacrylate and the other is a trialkyl tin methacrylate other than trimethyl tin methacrylate. In another preferred embodiment the copolymer is a novel copolymer derived from an ester of trialkyl tin and an ethylenically unsaturated carboxylic acid together with two or more other ethylenically unsaturated monomers, one of which is a long chain alkyl acrylate or methacrylate and another of which is a lower alkyl acrylate or methacrylate.

摘要翻译： 由含有化学结合锡的烯键式不饱和单体与至少一种烯键式不饱和单体的共聚物形成的无线电不透明假牙基底，含有化学键合锡的烯属不饱和单体是三烷基锡和烯属不饱和酸如三丁基锡 乙基丙烯酸酯。 在优选的实施方案中，共聚物是衍生自两种烯属不饱和锡的单体的新型共聚物，其中一种是三甲基甲基丙烯酸锡，另一种是甲基丙烯酸三甲酯以外的三烷基锡甲基丙烯酸酯。 在另一个优选的实施方案中，共聚物是衍生自三烷基锡和烯键式不饱和羧酸的酯与两种或更多种其它烯属不饱和单体的新型共聚物，其中一种是长链烷基丙烯酸酯或甲基丙烯酸酯，另一种是 低级烷基丙烯酸酯或甲基丙烯酸酯。

公开(公告)号：US20160255824A1

公开(公告)日：2016-09-08

申请号：US14640064

申请日：2015-03-06

申请人： John Foster

发明人： John Foster

IPC分类号： A01M3/00 ,  A01M3/02

CPC分类号： A01M3/005 ,  A01M3/025

摘要： An insect trapping device traps, kills and facilitates disposal of an insect. The device includes a handle which is hollow defining a conduit extending between a first end and a second end. A fan coupled to the handle in the conduit such that the fan provides suction into the first end of the handle. A cup is coupled to the first end of the handle for directing an insect into the first end of the handle. A receptacle is coupled to the second end of the handle and vented end such that the fan urges air flow out through the receptacle wherein the receptacle receives and holds the insect sucked through the first end of the handle.

摘要翻译： 昆虫捕获装置捕获，杀死并促进昆虫的处置。 该装置包括一个手柄，该手柄是中空的，限定了在第一端和第二端之间延伸的导管。 风扇，其联接到管道中的把手，使得风扇向手柄的第一端提供抽吸。 杯子联接到手柄的第一端，以将昆虫引导到手柄的第一端。 容器连接到手柄的第二端和通风端，使得风扇促使空气通过容器流出，其中容器容纳并保持通过手柄的第一端吸入的昆虫。