公开(公告)号：US20160255824A1

公开(公告)日：2016-09-08

申请号：US14640064

申请日：2015-03-06

Applicant: John Foster

Inventor： John Foster

IPC: A01M3/00 ,  A01M3/02

CPC classification number: A01M3/005 ,  A01M3/025

Abstract: An insect trapping device traps, kills and facilitates disposal of an insect. The device includes a handle which is hollow defining a conduit extending between a first end and a second end. A fan coupled to the handle in the conduit such that the fan provides suction into the first end of the handle. A cup is coupled to the first end of the handle for directing an insect into the first end of the handle. A receptacle is coupled to the second end of the handle and vented end such that the fan urges air flow out through the receptacle wherein the receptacle receives and holds the insect sucked through the first end of the handle.

Abstract translation: 昆虫捕获装置捕获，杀死并促进昆虫的处置。 该装置包括一个手柄，该手柄是中空的，限定了在第一端和第二端之间延伸的导管。 风扇，其联接到管道中的把手，使得风扇向手柄的第一端提供抽吸。 杯子联接到手柄的第一端，以将昆虫引导到手柄的第一端。 容器连接到手柄的第二端和通风端，使得风扇促使空气通过容器流出，其中容器容纳并保持通过手柄的第一端吸入的昆虫。

公开(公告)号：US08854067B2

公开(公告)日：2014-10-07

申请号：US13594292

申请日：2012-08-24

Applicant: Amol Joshi ,  Charlene Chen ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Dipankar Pramanik ,  Usha Raghuram ,  Mark Victor Raymond ,  Jingang Su ,  Bin Yang

Inventor： Amol Joshi ,  Charlene Chen ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Dipankar Pramanik ,  Usha Raghuram ,  Mark Victor Raymond ,  Jingang Su ,  Bin Yang

IPC: G01R27/08 ,  G01R31/28

CPC classification number: G01R27/08 ,  G01R31/2831 ,  H01L22/14 ,  H01L22/20

Abstract: Methods and structures are described for determining contact resistivities and Schottky barrier heights for conductors deposited on semiconductor wafers that can be combined with combinatorial processing, allowing thereby numerous processing conditions and materials to be tested concurrently. Methods for using multi-ring as well as single-ring CTLM structures to cancel parasitic resistance are also described, as well as structures and processes for inline monitoring of properties.

Abstract translation: 描述了用于确定沉积在可与组合处理组合的半导体晶片上的导体的接触电阻率和肖特基势垒高度的方法和结构，从而允许同时测试许多处理条件和材料。 还描述了使用多环以及单环CTLM结构来消除寄生电阻的方法，以及用于在线监测性质的结构和方法。

公开(公告)号：US20140011367A1

公开(公告)日：2014-01-09

申请号：US13541397

申请日：2012-07-03

Applicant: Gregory Nowling ,  John Foster

Inventor： Gregory Nowling ,  John Foster

IPC: H01L21/306

CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L29/6653

Abstract: Provided are methods for processing semiconductor substrates. The methods involve etching silicon nitride structures using phosphoric acid solutions maintained at low temperatures, such as between about 110° C. and 130° C. These temperatures provide adequate etching rates and do not damage surrounding metal silicide and silicon oxide structures. The etching rates of silicon nitride may be 10 Angstroms per minute and greater. Lower temperatures also allow decreasing concentrations of phosphoric acid in the etching solutions, which in some embodiments may be less than 90 weight percent. As a result, more selective etching of the silicon nitride structures may be achieved. This selectivity may be as high as hundred times relative to the silicide and silicon oxide structures. The surface conductivity of the silicide structures may remain substantially unchanged by this etching process.

Abstract translation: 提供了用于处理半导体衬底的方法。 该方法包括使用保持在低温（例如约110℃至130℃）之间的磷酸溶液来蚀刻氮化硅结构。这些温度提供足够的蚀刻速率，并且不会损坏周围的金属硅化物和氧化硅结构。 氮化硅的蚀刻速率可以为每分钟10埃或更高。 较低的温度也允许蚀刻溶液中磷酸的浓度降低，在一些实施方案中磷酸的浓度可以小于90重量％。 结果，可以实现对氮化硅结构的更多的选择性蚀刻。 相对于硅化物和氧化硅结构，该选择性可高达百倍。 通过该蚀刻工艺，硅化物结构的表面电导率可以保持基本不变。

公开(公告)号：US08603837B1

公开(公告)日：2013-12-10

申请号：US13562564

申请日：2012-07-31

Applicant: John Foster

Inventor： John Foster

IPC: H01L21/66 ,  H01L21/302 ,  H01L21/461 ,  C23F1/00

CPC classification number: H01L21/30604 ,  H01L21/02071 ,  H01L21/32134 ,  H01L21/67086 ,  H01L21/823828 ,  H01L22/12 ,  H01L22/20 ,  H01L22/30

Abstract: Combinatorial workflow is provided for evaluating cleaning processes after forming a gate structure of transistor devices, to provide optimized process conditions for gate stack formation, including metal gate stack using high-k dielectrics. NMOS and PMOS transistor devices are combinatorially fabricated on multiple regions of a substrate, with each region exposed to a different cleaning chemical and process. The transistor devices are then characterized, and the data are compared to categorize the potential damages of different cleaning chemicals and processes. Optimized chemicals and processes can be obtained to satisfy desired device requirements.

公开(公告)号：US20130316472A1

公开(公告)日：2013-11-28

申请号：US13480023

申请日：2012-05-24

Applicant: Amol Joshi ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Usha Raghuram

Inventor： Amol Joshi ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Usha Raghuram

IPC: H01L21/66

CPC classification number: H01L29/66181 ,  G01N27/002 ,  H01L22/14 ,  H01L22/20

Abstract: Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.

Abstract translation: 使用光刻图案化的金属栅极高k电容器结构使用组合工作流程提取门功函数。 氧化物梯田，以及用于金属沉积的高生产率组合工艺流程可为高性能逻辑晶体管提供最佳的高k栅介质和金属栅极解决方案。 高生产率组合技术可以为PMOS和NMOS晶体管的给定高k介质金属栅极叠层提供有效的工作函数的评估，这对于识别和选择正确的材料至关重要。

公开(公告)号：US20120001033A1

公开(公告)日：2012-01-05

申请号：US12977056

申请日：2010-12-22

Applicant: Gary P. Wilde ,  Bryan Billingsley ,  Matthew Sovic ,  Dean Bond ,  John Foster ,  Aaron Desmond ,  Joshua Wilde

Inventor： Gary P. Wilde ,  Bryan Billingsley ,  Matthew Sovic ,  Dean Bond ,  John Foster ,  Aaron Desmond ,  Joshua Wilde

IPC: H05K7/00 ,  B23P11/00 ,  F16M13/02

CPC classification number: F16M13/02 ,  Y10T29/49826

Abstract: An apparatus and method for mounting electronic equipment onto a pole are disclosed.

Abstract translation: 公开了一种用于将电子设备安装在极上的装置和方法。

公开(公告)号：US07400096B1

公开(公告)日：2008-07-15

申请号：US10894225

申请日：2004-07-19

Applicant: John Foster ,  Michael Patterson

Inventor： John Foster ,  Michael Patterson

IPC: H01J7/24 ,  C23F1/00 ,  C23C14/00

CPC classification number: H01J27/18 ,  H01J37/32357 ,  H01J37/32678 ,  H05H1/54

Abstract: An all permanent magnet Electron Cyclotron Resonance, large diameter (e.g., 40 cm) plasma source suitable for ion/plasma processing or electric propulsion, is capable of producing uniform ion current densities at its exit plane at very low power (e.g., below 200 W), and is electrodeless to avoid sputtering or contamination issues. Microwave input power is efficiently coupled with an ionizing gas without using a dielectric microwave window and without developing a throat plasma by providing a ferromagnetic cylindrical chamber wall with a conical end narrowing to an axial entrance hole for microwaves supplied on-axis from an open-ended waveguide. Permanent magnet rings are attached inside the wall with alternating polarities against the wall. An entrance magnet ring surrounding the entrance hole has a ferromagnetic pole piece that extends into the chamber from the entrance hole to a continuing second face that extends radially across an inner pole of the entrance magnet ring.

Abstract translation: 适用于离子/等离子体处理或电推进的大直径（例如，40厘米）等离子体源的全永磁电子回旋加速器共振能够以非常低的功率（例如，低于200W）在其出射平面处产生均匀的离子电流密度 ），并且是无电极的，以避免溅射或污染问题。 微波输入功率与离子化气体有效耦合，而不需要使用电介质微波窗口，而不需要通过提供一个铁磁性圆柱形腔室壁来形成喉部等离子体，该圆柱形腔室壁的锥形端部变窄到轴向入口孔，用于从开放端 波导。 永久磁铁环安装在墙壁内，与墙壁交替极性。 围绕入口孔的入口磁环具有铁磁极片，其从入口孔延伸到腔室中，延伸到径向穿过入口磁环的内极的连续的第二面。

公开(公告)号：US20070096860A1

公开(公告)日：2007-05-03

申请号：US11263912

申请日：2005-11-02

Applicant: John Foster ,  Paul Rubel

Inventor： John Foster ,  Paul Rubel

IPC: H01H61/00

CPC classification number: H01H61/04 ,  H01H1/0036 ,  H01H2001/0047 ,  H01H2001/0078 ,  H01H2061/006 ,  H01H2061/008

Abstract: A MEMS thermal device is made in a smaller size by decreasing the distance that the two cantilevered portions, a spring cantilever and a latch cantilever, of the device must travel. The smaller distance is accomplished by positioning the two contact surfaces of the spring cantilever and the latch cantilever adjacent to each other in the quiescent state of the switch. When the switch is closed, the spring cantilever moves laterally to clear the contact surface of the latch cantilever, and then the latch cantilever moves its contact surface into position. To close the switch, the spring cantilever is allowed to relax and return to nearly its original position, except for the presence of the latch contact surface. When the spring cantilever is allowed to relax, it stays in the closed position because of friction or because of an angled shape of the contact surfaces.

Abstract translation: 通过减小装置的两个悬臂部分（弹簧悬臂和闩锁悬臂）必须行进的距离来制造更小尺寸的MEMS热装置。 通过在开关的静止状态下将弹簧悬臂和闩锁悬臂的两个接触表面彼此相邻地定位，实现较小的距离。 当开关关闭时，弹簧悬臂横向移动以清除闩锁悬臂的接触表面，然后闩锁悬臂将其接触表面移动到位。 为了闭合开关，除了存在闩锁接触面之外，弹簧悬臂可以松弛并返回到其初始位置。 当弹簧悬臂被允许松弛时，由于摩擦或由于接触表面的成角度，它停留在关闭位置。

公开(公告)号：US20070039622A1

公开(公告)日：2007-02-22

申请号：US11401813

申请日：2006-04-10

Applicant: John Foster ,  Glenda Hill-Foster

Inventor： John Foster ,  Glenda Hill-Foster

IPC: A61F5/37 ,  A61B19/00

CPC classification number: E05B75/00

Abstract: The invention provides a method and apparatus for prisoner restraint using a durable material having a front and rear side forming a bag. Attached to the front side of the material is webbing using a hook and loop velcro system. Grommet holes deposed in and through the material allow for plastic ties to pass through and secure the hands. A two-part buckle attaches to the webbing with one part affixed to the webbing and the other part affixed to the front side of the durable material preventing the use of the prisoner's hands for escape.

Abstract translation: 本发明提供一种使用耐用材料的囚徒约束的方法和装置，其具有形成袋子的前侧和后侧。 连接到材料的正面是使用钩环尼龙搭扣系统进行织带。 通过材料排出的索环孔允许塑料连接件穿过并固定手。 两部分的扣环附着在织带上，一部分固定在织带上，另一部分固定在耐用材料的前侧，防止使用囚犯的手逃跑。

公开(公告)号：US20050282151A1

公开(公告)日：2005-12-22

申请号：US11196291

申请日：2005-08-04

Applicant: John Foster ,  John Harley ,  Steven Hovey ,  Richard Martin ,  Hung Nguyen ,  Paul Rubel

Inventor： John Foster ,  John Harley ,  Steven Hovey ,  Richard Martin ,  Hung Nguyen ,  Paul Rubel

IPC: A61M1/36 ,  B01L3/00 ,  C12M1/34 ,  C12Q1/00 ,  G01N15/02 ,  G01N21/05 ,  G01N21/64 ,  H01L21/00

CPC classification number: C12M47/04 ,  A61M1/36 ,  A61M1/3633 ,  A61M1/3678 ,  A61M2202/0437 ,  B01L3/5027 ,  G01N21/6428 ,  G01N2015/0288 ,  G01N2015/149 ,  Y10T436/11 ,  Y10T436/112499 ,  Y10T436/2575

Abstract: A micromechanical particle sorting chip uses laser light directed through at least one of a reflective and refractive surface to come to a focus in an optically transparent layer. The laser light impinges on a particle of interest, causing it to fluoresce. Upon detecting the fluorescence, a micromemchanical actuator is activated, which directs the particle of interest into one of a plurality of possible exit paths.

Abstract translation: 微机械粒子分选芯片使用通过反射和折射表面中的至少一个引导的激光在光学透明层中进行聚焦。 激光照射在感兴趣的颗粒上，使其发出荧光。 在检测到荧光时，微机械致动器被激活，其将感兴趣的颗粒引导到多个可能的出口路径中的一个。