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11.发明授权公开(公告)号：US08357923B2
公开(公告)日：2013-01-22
申请号：US12834608
申请日：2010-07-12
IPC分类号： H01L29/06
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44
摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.
摘要翻译： 公开了一种发光二极管，其包括在支撑结构上的支撑结构和III族氮化物发光活性结构台面。 台面具有沿着III族氮化物的折射晶面的侧壁。 还公开了一种形成二极管的方法，其包括以下步骤：从III族氮化物发光结构去除衬底，该III族氮化物发光结构包括在与衬底相对的III族氮化物发光结构上的子安装结构，然后蚀刻 已经用各向异性蚀刻去除衬底的III族氮化物，以在其中小面沿着III族氮化物的折射平面的表面上开发出晶面。 该方法还可以包括用各向异性蚀刻蚀刻发光结构，以形成沿着III族氮化物的折射平面的边缘的台面。
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12.发明申请CONFORMAL GEL LAYERS FOR LIGHT EMITTING DIODES AND METHODS OF FABRICATING SAME 有权用于发光二极管的合适凝胶层及其制造方法公开(公告)号：US20120319148A1
公开(公告)日：2012-12-20
申请号：US13160793
申请日：2011-06-15
CPC分类号： H01L33/54 , H01L25/0753 , H01L33/20 , H01L33/505 , H01L33/507 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2924/0002 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
摘要： Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent.
摘要翻译： 发光器件包括在安装衬底上的发光二极管管芯和安装衬底上和/或发光二极管管芯上的保形凝胶层。 保形凝胶层可以至少部分地填充发光二极管管芯和安装衬底之间的间隙。 可以在保形凝胶层上提供荧光体层和/或模制圆顶。 可以通过喷雾和/或分配在溶剂中稀释的凝胶来制造保形凝胶层。
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13.发明授权Three dimensional features on light emitting diodes for improved light extraction 有权用于改进光提取的发光二极管上的三维特征公开(公告)号：US08263995B2
公开(公告)日：2012-09-11
申请号：US12917960
申请日：2010-11-02
申请人： Matthew Donofrio
发明人： Matthew Donofrio
CPC分类号： H01L33/20 , B23K26/066 , B23K26/40 , B23K2101/40 , B23K2103/50 , B23K2103/52 , H01L33/0095 , H01L33/32 , Y10S438/94
摘要： A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
摘要翻译： 公开了一种用于在发光二极管的表面上获得高分辨率透镜图案的方法。 该方法包括将可蚀刻材料的图案化牺牲层压印在半导体表面上，该半导体表面又邻近发光有源区，然后蚀刻印刻的牺牲层和下面的半导体以将压印图案转移到邻近的半导体层 发光有源区。
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14.发明申请STRUCTURES AND SUBSTRATES FOR MOUNTING OPTICAL ELEMENTS AND METHODS AND DEVICES FOR PROVIDING THE SAME BACKGROUND 有权用于安装光学元件的结构和基板以及用于提供光学元件的方法和装置背景技术公开(公告)号：US20120193659A1
公开(公告)日：2012-08-02
申请号：US13017757
申请日：2011-01-31
申请人： Peter S. Andrews , Matthew Donofrio
发明人： Peter S. Andrews , Matthew Donofrio
CPC分类号： H01L33/486 , H01L33/54 , H01L2924/0002 , H01L2933/005 , H01L2924/00
摘要： Methods are disclosed including generating a substrate surface topography that includes a mounting portion that is higher than a relief portion that defines a perimeter of the mounting portion.
摘要翻译： 公开了包括生成衬底表面形貌的方法，该衬底表面形貌包括高于限定安装部分的周边的浮雕部分的安装部分。
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公开(公告)号：US08174037B2
公开(公告)日：2012-05-08
申请号：US11082470
申请日：2005-03-17
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
摘要翻译： 公开了一种高效率III族氮化物发光二极管。 二极管包括选自由半导体材料和导电材料组成的组的衬底，以及在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的双凸透镜表面。
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公开(公告)号：US20100140636A1
公开(公告)日：2010-06-10
申请号：US12329713
申请日：2008-12-08
摘要： A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors.
摘要翻译： 公开了一种包括有源区和多个外表面的发光二极管。 光增强特征存在于二极管的一个外表面的至少一部分上，光增强特征选自由成形和纹理组成的组。 在二极管的每个其它外表面的至少一部分上存在光增强特征，这些光增强特征选自由成形，纹理和反射器组成的组。
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公开(公告)号：US20090166659A1
公开(公告)日：2009-07-02
申请号：US12401832
申请日：2009-03-11
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
摘要翻译： 公开了一种发光二极管，其具有在二极管的顶表面的部分上的欧姆接触的垂直取向和与二极管的发光区相邻的镜层。 二极管包括通过二极管的顶部欧姆接触的几何投影下方的镜面层中的开口，其限定了二极管的反射镜层和发光区域之间的非接触区域，以促进电流流过而不是在 非接触区域又减少欧姆接触下方的发光复合数，并增加二极管透明部分中发光复合的数量。
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18.发明申请NICKEL TIN BONDING SYSTEM WITH BARRIER LAYER FOR SEMICONDUCTOR WAFERS AND DEVICES 有权用于半导体波形和器件的带有阻挡层的镍粘结体系公开(公告)号：US20080210971A1
公开(公告)日：2008-09-04
申请号：US11844127
申请日：2007-08-23
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
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公开(公告)号：US09673363B2
公开(公告)日：2017-06-06
申请号：US13178791
申请日：2011-07-08
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/20 , H01L33/486 , H01L33/505 , H01L33/62 , H01L2224/16
摘要： A light emitting device includes a mounting substrate having a reflective layer that defines spaced apart anode and cathode pads, and a gap between them. A light emitting diode die is flip-chip mounted on the mounting substrate, such that the anode contact of the LED die is bonded to the anode pad and the cathode contact of the LED die is bonded to the cathode pad. A lens extends from the mounting substrate to surround the LED die. The reflective layer extends on the mounting substrate to cover substantially all of the mounting substrate that lies beneath the lens, excluding the gap, and may also extend beyond the lens.
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20.发明授权Light emitting diode (LED) contact structures and process for fabricating the same 有权发光二极管（LED）接触结构及其制造方法公开(公告)号：US09437783B2
公开(公告)日：2016-09-06
申请号：US13466590
申请日：2012-05-08
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382 , H01L2933/0016
摘要： A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.
摘要翻译： 发光器件包括被配置为提供由于其中的载流子复合而发光的有源层，有源层上的表面和表面上的导电接触结构。 接触结构包括至少一个电镀接触层。 接触结构可以包括符合下表面的表面粗糙度的子层，并且电镀接触层可以基本上没有下表面的表面粗糙度。 电镀接触层的表面可以是基本上平面的和/或以其它方式构造成反射来自活性层的光发射。 还讨论了相关的制造方法。
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