利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.027 秒)

    Lithographic method
    11.
    发明授权
    Lithographic method 有权
    平版印刷法

    公开(公告)号：US07897324B2

    公开(公告)日：2011-03-01

    申请号：US12065926

    申请日：2006-09-05

    申请人： Peter Zandbergen ,  Jeroen H Lammers ,  David Van Steenwinckel

    发明人： Peter Zandbergen ,  Jeroen H Lammers ,  David Van Steenwinckel

    IPC分类号： G03F7/40 ,  G03F1/00

    CPC分类号： G03F7/0392

    摘要： The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.

    摘要翻译： 本发明提供了一种平版印刷图案化方法，以便图案化光致抗蚀剂的强度。 该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 以及通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射。 接下来，按照任何顺序，通过进行曝光后烘烤; 以及用显影剂显影光致抗蚀剂（18）以去除已经暴露于光化辐射的光致抗蚀剂的一部分。 聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并通过催化剂的作用使其溶解在显影剂中，并且其中聚合物树脂在烘烤期间通过猝灭剂的作用而交联。

    Lithographic Method
    13.
    发明申请
    Lithographic Method 有权
    平版方法

    公开(公告)号：US20080131820A1

    公开(公告)日：2008-06-05

    申请号：US11720315

    申请日：2005-11-10

    申请人： David Van Steenwinckel ,  Peter Zandbergen

    发明人： David Van Steenwinckel ,  Peter Zandbergen

    IPC分类号： G03F7/40

    CPC分类号： G03F7/30 ,  G03F7/095 ,  G03F7/32

    摘要： A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p1) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p2) half that of the optical period (p1). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p2) half that of the optical period (p1).

    摘要翻译： 描述了实现倍频光刻图案的方法。 使用具有第一周期（p <1> 1）的光学图案（16）来曝光基底（20）上的常规酸催化的光致抗蚀剂（18），留下高曝光区域（24） 低曝光（26）和中间区域（22）。 处理进行离开区域（24），其接收高暴露非常极性，即亲水性低暴露非极性（即疏水性）的区域（26），并且具有中等极性的中间区域。 然后使用显影剂丙二醇甲基醚乙酸酯仅溶解中间区域（22），使光致抗蚀剂图案化成具有光学周期（p <1> / SUB>）。 或者，光致抗蚀剂从非极性区域和极性区域移除，仅再次以中间区域（22）的光学周期（p <1/2）的相同间距（p <2> 2） SUB>）。

    Lithographic method
    15.
    发明授权
    Lithographic method 有权
    平版印刷法

    公开(公告)号：US07897323B2

    公开(公告)日：2011-03-01

    申请号：US11720315

    申请日：2005-11-10

    申请人： David Van Steenwinckel ,  Peter Zandbergen

    发明人： David Van Steenwinckel ,  Peter Zandbergen

    IPC分类号： G03F7/26

    CPC分类号： G03F7/30 ,  G03F7/095 ,  G03F7/32

    摘要： A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p1) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer of intermediate polarity such as propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p2) half that of the optical period (p1). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p2) half that of the optical period (p1).

    摘要翻译： 描述了实现倍频光刻图案的方法。 使用具有第一周期（p1）的光学图案（16）来暴露基底（20）上的常规酸催化光致抗蚀剂（18），留下高曝光区域（24），低曝光区域（26）和中间区域 （22）。 处理进行离开区域（24），其接收高暴露非常极性，即亲水性低暴露非极性（即疏水性）的区域（26），并且具有中等极性的中间区域。 然后使用中等极性的显影剂，例如丙二醇甲基醚乙酸酯仅溶解中间区域（22），留下光刻胶图案化成具有光学期间（p1）的间距（p2）的一半。 或者，光致抗蚀剂从非极性区域和极性区域移除，仅再次以与光学周期（p1）相同的间距（p2）为中间区域（22）。

    Lithographic Method
    16.
    发明申请
    Lithographic Method 有权
    平版方法

    公开(公告)号：US20090130611A1

    公开(公告)日：2009-05-21

    申请号：US12065930

    申请日：2006-09-05

    申请人： Peter Zandbergen ,  Jeroen H. Lammers ,  David Van Steenwinckel

    发明人： Peter Zandbergen ,  Jeroen H. Lammers ,  David Van Steenwinckel

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0392 ,  G03F7/0382

    摘要： The present invention provides a method of lithographic patterning. The method comprisese: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; exposing the photoresist (18) to actinic radiation through a mask pattern (12); carrying out a post-exposure bake; and then developing the photoresist (18) with a developer to remove a portion of the photoresist which has been rendered soluble in the developer. Either the polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and by the action of the quencher during the bake, or the polymer resin is soluble in the developer prior to exposure to actinic radiation and rendered substantially insoluble in the developer by the action of the catalyst, and by the action of the quencher during the bake.

    摘要翻译： 本发明提供一种平版印刷图案化方法。 该方法包括：施加到待图案化的表面上，包括聚合物树脂的光致抗蚀剂（18），在光化辐射下产生催化剂的光催化剂产生剂和猝灭剂; 通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射; 进行曝光后烘烤; 然后用显影剂显影光致抗蚀剂（18）以除去已经溶解在显影剂中的一部分光致抗蚀剂。 聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并且通过催化剂的作用并且通过猝灭剂在烘烤期间的作用而使其溶解在显影剂中，或者聚合物树脂可溶于显影剂中 暴露于光化辐射并且通过催化剂的作用基本上不溶于显影剂，并且通过在烘烤期间猝灭剂的作用。

    Lithographic method for small line printing
    17.
    发明申请
    Lithographic method for small line printing 审中-公开
    小线印刷的平版印刷方法

    公开(公告)号：US20050268804A1

    公开(公告)日：2005-12-08

    申请号：US10525863

    申请日：2003-08-18

    申请人： David Van Steenwinckel ,  Jeroen Lammers

    发明人： David Van Steenwinckel ,  Jeroen Lammers

    IPC分类号： G03F7/039 ,  G03F7/038 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  B41C1/00

    CPC分类号： G03F7/70558 ,  G03F7/38

    摘要： The minimal feature width (CD) of a pattern of device features configured in a substrate layer by means of a lithographic process can be reduced considerably, without reducing process latitudes (DOF), by substantially extending the post-exposure bake step and reducing the exposure dose. By the same measures the isofocal CD can be tuned to the design CD so that for an arbitrary CD process latitudes are enlarged.

    摘要翻译： 通过基本上延长后曝光烘烤步骤并减少曝光，通过光刻工艺在衬底层中配置的器件特征图案的最小特征宽度（CD）可以显着降低，而不会降低工艺纬度（DOF） 剂量。 通过同样的措施，可以将设计光盘调整为非焦距CD，以便对于任意CD进程纬度的放大。

    Analyte detection method and analyte detection integrated circuit
    18.
    发明授权
    Analyte detection method and analyte detection integrated circuit 有权

    公开(公告)号：US10041940B2

    公开(公告)日：2018-08-07

    申请号：US13570864

    申请日：2012-08-09

    申请人： Filip Frederix ,  Friso Jacobus Jedema ,  David Van Steenwinckel ,  Hilco Suy

    发明人： Filip Frederix ,  Friso Jacobus Jedema ,  David Van Steenwinckel ,  Hilco Suy

    IPC分类号： G01N33/543 ,  C12Q1/6825 ,  G01N27/414

    摘要： A method for providing an integrated circuit such that first and second sensing electrodes respectively have at their surfaces first and second receptor molecules for selectively binding to first and second analytes of interest; exposing the integrated circuit to a sample potentially comprising at least one of the first and second analytes, providing a first bead having a first electrical signature attached to a first molecule having a conformation/affinity for binding to the first sensing electrode dependent on the presence of the first analyte; providing a second bead having a second electrical signature attached to a second molecule having a conformation/affinity for binding to the second sensing electrode dependent on the presence of the second analyte; and determining the presence of the electrical signature of the first and/or second bead(s) on the first and second sensing electrodes respectively. An IC for implementing this method.