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11.发明申请METHOD AND APPARATUSES FOR PROVIDING ELECTRICAL CONTACT FOR PLASMA PROCESSING APPLICATIONS 审中-公开用于提供等离子体处理应用的电气接触的方法和装置公开(公告)号：US20080160212A1
公开(公告)日：2008-07-03
申请号：US11616314
申请日：2006-12-27
申请人： Bon-Woong Koo , Steven R. Walther , Christopher J. Leavitt , Justin Tocco , Sung-Hwan Hyun , Timothy J. Miller , Jay T. Scheuer , Atul Gupta , Vikram Singh , Deven Raj
发明人： Bon-Woong Koo , Steven R. Walther , Christopher J. Leavitt , Justin Tocco , Sung-Hwan Hyun , Timothy J. Miller , Jay T. Scheuer , Atul Gupta , Vikram Singh , Deven Raj
CPC分类号： H01J37/32706 , H01J37/32623 , H01L21/67011 , H01L21/67069 , H01L21/68714 , H01L21/68735
摘要： A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).
摘要翻译： 公开了一种用于在等离子体处理应用期间提供与半导体晶片的改进的电接触的方法和装置。 在一个实施例中，一种装置包括用于支撑晶片的晶片台板; 以及多个电接触元件，所述多个电接触元件中的每一个被配置为提供用于将来自偏置电源的偏置电压提供给晶片台板上的晶片的路径。 多个电接触元件也被几何地布置成使得至少一个电接触元件接触内表面区域（例如，晶片的中心与晶片的半径的一半的距离）和至少一个电接触 元件接触外部环形表面区域（例如，晶片的外边缘之间的区域和晶片的半径的一半的距离）。
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公开(公告)号：US08623171B2
公开(公告)日：2014-01-07
申请号：US12418120
申请日：2009-04-03
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂被配置为控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 通过控制等离子体和等离子体护套之间的边界的形状，能够实现粒子撞击工件的大范围入射角。
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公开(公告)号：US08288741B1
公开(公告)日：2012-10-16
申请号：US13210959
申请日：2011-08-16
申请人： Timothy J. Miller , Ludovic Godet
发明人： Timothy J. Miller , Ludovic Godet
CPC分类号： H01J37/302 , H01J37/32082 , H01J2237/24528
摘要： A method for treating a workpiece. The method includes directing a first ion beam to a first region of a workpiece, wherein the first ion beam has a first ion angular profile of first ions extracted through an aperture of an extraction plate. The method also includes directing a second ion beam to the first region of the workpiece, wherein the second ion beam has a second ion angular profile different than the first ion profile of second ions extracted through the aperture of the extraction plate.
摘要翻译： 一种处理工件的方法。 该方法包括将第一离子束引导到工件的第一区域，其中第一离子束具有通过提取板的孔提取的第一离子的第一离子角分布。 该方法还包括将第二离子束引导到工件的第一区域，其中第二离子束具有与通过提取板的孔提取的第二离子的第一离子分布不同的第二离子角度分布。
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公开(公告)号：US07767977B1
公开(公告)日：2010-08-03
申请号：US12417929
申请日：2009-04-03
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J2237/0451 , H01J2237/0453 , H01J2237/0456 , H01J2237/065 , H01J2237/08 , H01J2237/083 , H01J2237/31 , H01J2237/31701 , Y10S438/961
摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要翻译： 离子源包括具有提取孔的电弧室和等离子体鞘调制器。 等离子体鞘调制器被配置为控制等离子体和靠近提取孔的等离子体鞘之间的边界的形状。 等离子体鞘调制器可以包括位于电弧室中的一对绝缘体，并且间隔开位于靠近提取孔的间隙。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。
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公开(公告)号：US08907307B2
公开(公告)日：2014-12-09
申请号：US13046239
申请日：2011-03-11
IPC分类号： H01J3/14 , H01J37/302 , H01J37/317 , H01J37/32
CPC分类号： H01J37/3172 , H01J37/3023 , H01J37/32009 , H01J37/32137 , H01J37/32376 , H01J37/32412 , H01J37/32623 , H01J2237/31711
摘要： A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate adjacent to a plasma chamber containing a plasma, such that the extraction plate extracts ions from the plasma through at least one aperture that provides an ion beam having ions distributed over a range of an angles of incidence on the workpiece. The method may include scanning the workpiece with respect to the extraction plate and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at a surface of the workpiece, a first beam width at a first power level is greater than a second beam width at a second power level.
摘要翻译： 在离子注入系统中植入工件的方法。 该方法可以包括提供与含有等离子体的等离子体室相邻的提取板，使得提取板通过至少一个孔提取离子，等离子体提供离子束，离子束具有分布在入射角范围内的离子 工件。 该方法可以包括相对于提取板扫描工件并且在从第一功率水平到第二功率水平的扫描期间改变等离子体的功率水平，其中在工件的表面处具有第一光束宽度 功率水平大于第二功率水平的第二波束宽度。
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16.发明授权公开(公告)号：US08460569B2
公开(公告)日：2013-06-11
申请号：US13081692
申请日：2011-04-07
CPC分类号： H01L21/306 , H01L21/2658 , H01L21/26586 , H01L21/3105 , H01L21/311 , H01L21/31155 , H01L21/321 , H01L21/3213
摘要： A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.
摘要翻译： 图案化衬底的方法包括在衬底上提供一组图案化特征，将一组图案化特征暴露于在多个角度上入射到衬底上的一定剂量的离子，以及选择性地蚀刻图案化特征的暴露部分。
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17.发明申请公开(公告)号：US20120258600A1
公开(公告)日：2012-10-11
申请号：US13081692
申请日：2011-04-07
IPC分类号： H01L21/306
CPC分类号： H01L21/306 , H01L21/2658 , H01L21/26586 , H01L21/3105 , H01L21/311 , H01L21/31155 , H01L21/321 , H01L21/3213
摘要： A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.
摘要翻译： 图案化衬底的方法包括在衬底上提供一组图案化特征，将一组图案化特征暴露于在多个角度上入射到衬底上的一定剂量的离子，以及选择性地蚀刻图案化特征的暴露部分。
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公开(公告)号：US20120228515A1
公开(公告)日：2012-09-13
申请号：US13046239
申请日：2011-03-11
IPC分类号： H01J3/14
CPC分类号： H01J37/3172 , H01J37/3023 , H01J37/32009 , H01J37/32137 , H01J37/32376 , H01J37/32412 , H01J37/32623 , H01J2237/31711
摘要： A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate adjacent to a plasma chamber containing a plasma, such that the extraction plate extracts ions from the plasma through at least one aperture that provides an ion beam having ions distributed over a range of an angles of incidence on the workpiece. The method may include scanning the workpiece with respect to the extraction plate and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at a surface of the workpiece, a first beam width at a first power level is greater than a second beam width at a second power level.
摘要翻译： 在离子注入系统中植入工件的方法。 该方法可以包括提供与含有等离子体的等离子体室相邻的提取板，使得提取板通过至少一个孔提取离子，等离子体提供离子束，所述离子束具有分布在入射角范围内的离子 工件。 该方法可以包括相对于提取板扫描工件并且在从第一功率水平到第二功率水平的扫描期间改变等离子体的功率水平，其中在工件的表面处具有第一光束宽度 功率水平大于第二功率水平的第二波束宽度。
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公开(公告)号：US20100255683A1
公开(公告)日：2010-10-07
申请号：US12418120
申请日：2009-04-03
IPC分类号： H01L21/3065 , C23C16/513 , H01L21/306 , H01L21/302
CPC分类号： H01J37/32623
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂被配置为控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 通过控制等离子体和等离子体护套之间的边界的形状，能够实现粒子撞击工件的大范围入射角。
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公开(公告)号：US20130287963A1
公开(公告)日：2013-10-31
申请号：US13457455
申请日：2012-04-26
IPC分类号： C23C14/48
CPC分类号： C23C14/48 , H01J37/32357 , H01J37/32412
摘要： An ion implantation apparatus including a first plasma chamber, a second plasma chamber and an extraction electrode disposed therebetween. The first and second plasma chambers configured to house respective plasmas in response to the introduction of a different feed gases therein. The extraction electrode is electrically isolated from the plasma chamber. An extraction voltage is applied to the first plasma chamber above a bias potential used to generate the plasma therein. The extraction voltage drives the plasma potential to accelerate the ions in the first plasma to a desired implant energy. The accelerated ions pass through an aperture in the extraction electrode and are directed toward a substrate housed within the second plasma chamber for implantation.
摘要翻译： 一种离子注入装置，包括第一等离子体室，第二等离子体室和设置在其间的提取电极。 第一和第二等离子体室被配置为响应于其中引入不同的进料气体来容纳各个等离子体。 提取电极与等离子体室电隔离。 提供电压施加到第一等离子体室以上用于在其中产生等离子体的偏置电位。 提取电压驱动等离子体电位以将第一等离子体中的离子加速到期望的注入能量。 加速离子通过引出电极中的孔，并且被引向容纳在第二等离子体室内用于注入的衬底。
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