公开(公告)号：US20240234167A1

公开(公告)日：2024-07-11

申请号：US18095262

申请日：2023-01-10

Applicant: Applied Materials, Inc.

Inventor： Shashank Sharma ,  Udit Suryakant Kotagi ,  Diwakar Kedlaya ,  Mayur Govind Kulkarni ,  Rupankar Choudhury

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/67103 ,  H01L21/67196

Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a plurality of processing regions. The systems may include at least one splitter. Each splitter may include a top surface and side surfaces. Each splitter may define an inlet and a plurality of outlets. Each inlet and outlet may extend through a side surface. Each splitter may define an inlet lumen that extends from the fluid inlet to a hub. Each splitter may define a plurality of outlet lumens that each extend from the hub to one of the outlets. Each of the outlet lumens may have a same length. The systems may include a plurality of output manifolds. Each of the output manifolds may be coupled with a respective processing region. The systems may include a plurality of valves. At least one valve may be coupled between each outlet and an output manifold.

公开(公告)号：US12020907B2

公开(公告)日：2024-06-25

申请号：US16844106

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Arun Thottappayil ,  Mayur Govind Kulkarni ,  Junghoon Sun ,  Jun Tae Choi ,  Hang Yu

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32366 ,  H01J37/32513 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32834 ,  H01L21/0262 ,  H01J2237/332

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The faceplate may be characterized by a central axis. The faceplate may define a plurality of apertures through the faceplate distributed in a number of rings. Each ring of apertures may include a scaled increase in aperture number from a ring radially inward. A radially outermost ring of apertures may be characterized by a number of apertures reduced from the scaled increase in aperture number.

公开(公告)号：US20230113063A1

公开(公告)日：2023-04-13

申请号：US17498179

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Udit S. Kotagi ,  Mayur Govind Kulkarni

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/44

Abstract: Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

公开(公告)号：US20220093368A1

公开(公告)日：2022-03-24

申请号：US17026840

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Khokan Chandra Paul ,  Madhu Santosh Kumar Mutyala

IPC: H01J37/32 ,  C23C16/455

Abstract: semiconductor processing chambers include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface and the substrate support may at least partially define a processing region within the chamber. The faceplate may define an inner plurality of apertures. Each of the inner apertures may include a generally cylindrical aperture profile. The faceplate may define an outer plurality of apertures that are positioned radially outward from the inner apertures. Each of the outer apertures may include a conical aperture profile that extends through the second surface.

公开(公告)号：US20210319981A1

公开(公告)日：2021-10-14

申请号：US16844106

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Arun Thottappayil ,  Mayur Govind Kulkarni ,  Junghoon Sun ,  Jun Tae Choi ,  Hang Yu

IPC: H01J37/32 ,  H01L21/02

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The faceplate may be characterized by a central axis. The faceplate may define a plurality of apertures through the faceplate distributed in a number of rings. Each ring of apertures may include a scaled increase in aperture number from a ring radially inward. A radially outermost ring of apertures may be characterized by a number of apertures reduced from the scaled increase in aperture number.

公开(公告)号：US12119209B2

公开(公告)日：2024-10-15

申请号：US17498189

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Udit S. Kotagi ,  Mayur Govind Kulkarni

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32733 ,  H01J2237/3323 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

公开(公告)号：US12040210B2

公开(公告)日：2024-07-16

申请号：US17073671

申请日：2020-10-19

Applicant: Applied Materials, Inc.

Inventor： Jian Li ,  Dmitry A. Dzilno ,  Juan Carlos Rocha-Alvarez ,  Paul L. Brillhart ,  Akshay Gunaji ,  Mayur Govind Kulkarni ,  Sandeep Bindgi ,  Sanjay Kamath ,  Kwangduk Douglas Lee ,  Zongbin Wang ,  Yubin Zhang ,  Yong Xiang Lim

IPC: H01L21/683 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/6833 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/32715 ,  H01L21/68742 ,  H01J2237/2007 ,  H01J2237/3321

Abstract: Exemplary semiconductor processing systems include a processing chamber, a power supply, and a chuck disposed at least partially within the processing chamber. The chuck includes a chuck body defining a vacuum port. The chuck also includes first and second coplanar electrodes embedded in the chuck body and connected to the power supply. In some examples, coplanar electrodes include concentric electrodes defining a concentric gap in between. Exemplary semiconductor processing methods may include activating the power supply for the electrostatic chuck to secure a semiconductor substrate on the body of the chuck and/or activating the vacuum port defined by the body of the electrostatic chuck. Some processing can be carried out at increased pressure, while other processing can be carried out at reduced pressure with increased chucking voltage.

公开(公告)号：US20240153745A1

公开(公告)日：2024-05-09

申请号：US17981394

申请日：2022-11-05

Applicant: Applied Materials, Inc.

Inventor： Katherine Woo ,  Jennifer Y. Sun ,  Jian Li ,  Wenhao Zhang ,  Mayur Govind Kulkarni ,  Chidambara A. Ramalingam ,  Ryan Sheil ,  Martin J. Seamons ,  Nitin Deepak

IPC: H01J37/32 ,  C23C16/455 ,  C23C28/04 ,  C25D11/18

CPC classification number: H01J37/32495 ,  C23C16/45525 ,  C23C28/046 ,  C25D11/18 ,  H01J37/32467

Abstract: Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of greater than or about 0.01 vol. %. The methods further include depositing a second layer on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %. Treated semiconductor fabrication components are also described. In embodiments, the treated components include a first layer formed in the surface of the semiconductor fabrication component, where the first layer is characterized by a porosity of greater than or about 0.01 vol. %., and a second layer positioned on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %.

公开(公告)号：US11869795B2

公开(公告)日：2024-01-09

申请号：US17371549

申请日：2021-07-09

Applicant: Applied Materials, Inc.

Inventor： Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Madhu Santosh Kumar Mutyala ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/683 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01L21/6833 ,  C23C16/4586 ,  H01J37/32697 ,  H01J37/32724 ,  H01J2237/3321

Abstract: Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.

公开(公告)号：US20230008922A1

公开(公告)日：2023-01-12

申请号：US17371549

申请日：2021-07-09

Applicant: Applied Materials, Inc.

Inventor： Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Madhu Santosh Kumar Mutyala ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/683 ,  H01J37/32 ,  C23C16/458

Abstract: Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.