公开(公告)号：US09431267B2

公开(公告)日：2016-08-30

申请号：US14093503

申请日：2013-12-01

Applicant: Applied Materials, Inc.

Inventor： Mayur Trivedi ,  Sushil Padiyar ,  Lakshmanan Karuppiah ,  Randhir Thakur

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/67

CPC classification number: H01L21/3088 ,  H01L21/3086 ,  H01L21/67184 ,  H01L21/67207

Abstract: In some embodiments, an electronic device processing system is provided that includes a processing tool having a first subsystem configured to carry out a first subset of processes on a substrate having pattern features, the first subsystem including a first conformal deposition chamber and a first etch chamber. The processing tool includes a second subsystem coupled to the first subsystem and configured to carry out a second subset of processes on the substrate, the second subsystem including a second conformal deposition chamber and a second etch chamber. The processing tool is configured to employ the first and second subsystems to perform pitch division on the substrate within the processing tool so as to form a reduced-pitch pattern on the substrate. Numerous other embodiments are provided.

Abstract translation: 在一些实施例中，提供一种电子设备处理系统，其包括具有第一子系统的处理工具，第一子系统被配置为在具有图案特征的基板上执行第一子进程，第一子系统包括第一共形沉积室和第一蚀刻室 。 所述处理工具包括耦合到所述第一子系统并被配置为在所述衬底上执行第二子进程的第二子系统，所述第二子系统包括第二共形沉积室和第二蚀刻室。 处理工具被配置为使用第一和第二子系统在处理工具内的基板上执行螺距分割，以便在基板上形成减小的间距图案。 提供了许多其他实施例。

公开(公告)号：US20160027673A1

公开(公告)日：2016-01-28

申请号：US14875479

申请日：2015-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/677

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US09165786B1

公开(公告)日：2015-10-20

申请号：US14452220

申请日：2014-08-05

Applicant: Applied Materials, Inc.

Inventor： Vinod R. Purayath ,  Randhir Thakur ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01L29/66 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/67207 ,  H01L28/00 ,  H01L29/66833

Abstract: Methods of etching back an oxide-nitride-oxide (ONO) layer of a 3-d flash memory cell without breaking vacuum are described. The methods include recessing the two outer silicon oxide dielectric layers to expose the flanks of the thin silicon nitride layer. The silicon nitride layer is then etched back from all exposed sides to hasten the process on the same substrate processing mainframe. Both etching back the silicon oxide and etching back the silicon nitride use remotely excited fluorine-containing apparatuses attached to the same mainframe to facilitate performing both operations without an intervening atmospheric exposure. The process may also be reversed such that the silicon nitride is etched back first.

Abstract translation: 描述了在不破坏真空的情况下将3-d闪存单元的氧化物 - 氮化物 - 氧化物（ONO）层刻蚀的方法。 这些方法包括使两个外部氧化硅介电层凹陷以暴露薄氮化硅层的侧面。 然后从所有暴露的侧面回蚀刻氮化硅层，以加速相同基板处理主机上的工艺。 两者都蚀刻氧化硅并且将附着在相同主机上的远程激发的含氟设备的氮化硅用途蚀刻回来，以便于在没有中间大气暴露的情况下执行这两种操作。 该方法也可以颠倒，使得首先蚀刻氮化硅。

公开(公告)号：US09449850B2

公开(公告)日：2016-09-20

申请号：US14703299

申请日：2015-05-04

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/324 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20160035614A1

公开(公告)日：2016-02-04

申请号：US14448059

申请日：2014-07-31

Applicant: Applied Materials, Inc.

Inventor： Vinod R. Purayath ,  Randhir Thakur ,  Shankar Venkataraman ,  Nitin K. Ingle

IPC: H01L21/764 ,  H01L29/06 ,  H01L21/311 ,  H01L29/49 ,  H01L21/02 ,  H01L27/115

CPC classification number: H01L21/764 ,  H01J37/32357 ,  H01L21/02071 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/68764 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66833 ,  H01L29/7887

Abstract: Methods of forming flash memory cells are described which incorporate air gaps for improved performance. The methods are useful for so-called “2-d flat cell” flash architectures. 2-d flat cell flash memory involves a reactive ion etch to dig trenches into multi-layers containing high work function and other metal layers. The methods described herein remove the metal oxide debris from the sidewalls of the multi-layer trench and then, without breaking vacuum, selectively remove shallow trench isolation (STI) oxidation which become the air gaps. Both the metal oxide removal and the STI oxidation removal are carried out in the same mainframe with highly selective etch processes using remotely excited fluorine plasma effluents.

Abstract translation: 描述形成闪速存储器单元的方法，其包括用于改善性能的气隙。 这些方法对于所谓的“2-d平坦单元”闪存架构是有用的。 2-d平板电池闪存包括反应离子蚀刻，以将沟槽挖掘成包含高功函数和其它金属层的多层。 本文描述的方法从多层沟槽的侧壁去除金属氧化物碎屑，然后在不破坏真空的情况下选择性地去除成为气隙的浅沟槽隔离（STI）氧化。 金属氧化物去除和STI氧化去除都是使用远程激发的氟等离子体流出物，在相同的主机中进行高选择性蚀刻工艺。

公开(公告)号：US20150332930A1

公开(公告)日：2015-11-19

申请号：US14808904

申请日：2015-07-24

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/268 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US09153442B2

公开(公告)日：2015-10-06

申请号：US14248143

申请日：2014-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/263 ,  H01L21/67 ,  H01L21/02 ,  H01L21/677 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/683 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US09093371B2

公开(公告)日：2015-07-28

申请号：US14246978

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: B08B3/12 ,  B08B6/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/263 ,  H01L21/02 ,  H01L21/677 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140273489A1

公开(公告)日：2014-09-18

申请号：US14246952

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140273481A1

公开(公告)日：2014-09-18

申请号：US14246937

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.