公开(公告)号：US20210351035A1

公开(公告)日：2021-11-11

申请号：US17379508

申请日：2021-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  A61K9/00 ,  A61K31/438 ,  A61K31/4409 ,  A61K31/47 ,  A61K31/497 ,  A61K47/12 ,  A61K47/26 ,  A61K47/36 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：US20210159459A1

公开(公告)日：2021-05-27

申请号：US16698835

申请日：2019-11-27

Applicant: Applied Materials, Inc.

Inventor： Kyuil Cho ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L51/52 ,  H01L51/56

Abstract: A method of encapsulating an organic light-emitting diode display includes depositing a plurality of first polymer projections onto a light-emitting side of a display layer having a plurality of organic light-emitting diodes (OLEDs) such that the plurality of first polymer projections have spaces therebetween that expose an underlying surface, and conformally coating the first polymer projections and the spaces between the first polymer projections with a first dielectric layer such that the first dielectric layer has side walls along sides of the first polymer projections and defines wells in spaces between the side walls.

公开(公告)号：US20210159452A1

公开(公告)日：2021-05-27

申请号：US16696949

申请日：2019-11-26

Applicant: Applied Materials, Inc.

Inventor： Gang Yu ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Hyunsung Bang ,  Lisong Xu ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L51/52 ,  H01L51/56

Abstract: An organic light-emitting diode (OLED) structure including a substrate; a dielectric layer on the substrate having an array of well structures, wherein each well structure includes a recess with side walls and a floor, and the well structures are separated by plateaus; a stack of OLED layers covering at least the floor of the well; a light extraction layer (LEL) in the well over the stack of OLED layers; and a coating covering a portion of the stack of OLED layers such that a top surface of the plateaus is more hydrophobic than a surface in the well on which the light extraction layer is formed.

公开(公告)号：US20190287808A1

公开(公告)日：2019-09-19

申请号：US15920146

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Prerna Sonthalia Goradia ,  Fei Wang ,  Geetika Bajaj ,  Nitin Ingle ,  Zihui Li ,  Robert Jan Visser ,  Nitin Deepak

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/308 ,  H01J37/32

Abstract: Precursors, such as interhalogens and/or compounds formed of noble gases and halogens, may be supplied in a gaseous form to a semiconductor processing chamber at a predetermined amount, flow rate, pressure, and/or temperature in a cyclic manner such that atomic layer etching of select semiconductor materials may be achieved in each cycle. In the etching process, the element of the precursor that has a relatively higher electronegativity may react with select semiconductor materials to form volatile etching byproducts. The element of the precursor that has a relatively lower electronegativity may form a gas that may be recycled to re-form an precursor with one or more halogen-containing materials using a plasma process.

公开(公告)号：US10319782B2

公开(公告)日：2019-06-11

申请号：US16194176

申请日：2018-11-16

Applicant: Applied Materials, Inc.

Inventor： Manivannan Thothadri ,  Robert Jan Visser

IPC: H01L27/15 ,  H01L33/00 ,  H01L25/075 ,  H01L33/60 ,  H01L21/683 ,  H01L21/67 ,  H05K13/04 ,  H05K3/00 ,  H05K3/30 ,  H05K13/00 ,  H01L33/20 ,  H01L33/48

Abstract: A method of surface mounting micro-devices includes adhering a first plurality of micro-devices on a donor substrate to a transfer surface with an adhesive layer, removing the first plurality of micro-devices from donor substrate while the first plurality of micro-devices remain adhered to the transfer surface, positioning the transfer surface relative to a destination substrate so that a subset of the plurality of micro-devices on the transfer surface abut a plurality of receiving positions on the destination substrate, the subset including one or more micro-devices but less than all of micro-devices of the plurality of micro-devices, selectively neutralizing one or more of regions of the adhesive layer on the transfer surface corresponding to the subset of micro-device to light to detach the subset of micro-devices from the adhesive layer, and separating the transfer surface from the destination substrate such that the subset of micro-devices remain on the destination substrate.

公开(公告)号：US10319601B2

公开(公告)日：2019-06-11

申请号：US15467866

申请日：2017-03-23

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Prerna Goradia ,  Prayudi Lianto ,  Jie Zeng ,  Arvind Sundarrajan ,  Robert Jan Visser ,  Guan Huei See

IPC: H01L21/3105 ,  H01L21/3205 ,  C09G1/02 ,  C09K3/14 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K13/06 ,  B24B1/00 ,  B24B37/04 ,  H01L21/306

Abstract: A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.

公开(公告)号：US10280507B2

公开(公告)日：2019-05-07

申请号：US15978930

申请日：2018-05-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Darshan Thakare ,  Abhijit Basu Mallick ,  Pramit Manna ,  Robert Jan Visser ,  Prerna Sonthalia Goradia ,  Nilesh Chimanrao Bagul

IPC: C23C16/448 ,  C23C16/40 ,  C23C16/34 ,  H01L21/02

Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

公开(公告)号：US10177002B2

公开(公告)日：2019-01-08

申请号：US15459536

申请日：2017-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Geetika Bajaj ,  Ravindra Patil ,  Prerna Goradia ,  Robert Jan Visser

IPC: H01L21/322 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

Abstract: Improved methods for chemically etching silicon are provided herein. In some embodiments, a method of etching a silicon material includes: (a) exposing the silicon material to a halogen-containing gas; (b) evacuating the halogen-containing gas from the semiconductor processing chamber; (c) exposing the silicon material to an amine vapor to etch a monolayer of the silicon material; (d) evacuating the amine vapor from the semiconductor processing chamber and; (e) optionally repeating (a)-(d) to etch the silicon material to a predetermined thickness.

公开(公告)号：US20180261500A1

公开(公告)日：2018-09-13

申请号：US15452394

申请日：2017-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Geetika Bajaj ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Bhaskar Kumar ,  Deenesh Padhi

IPC: H01L21/768 ,  H01L21/32

Abstract: Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.

公开(公告)号：US10043684B1

公开(公告)日：2018-08-07

申请号：US15425231

申请日：2017-02-06

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Nitin Ingle ,  Mikhail Korolik ,  Jayeeta Biswas ,  Saurabh Lodha

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.