Abstract:
The invention relates to a surface preparation method using a combination of at least two polymers, which are the same or different, which are grafted hierarchically or multiply on a surface, and also to the use of this preparation method, more particularly in applications for controlling the surface energy of a substrate. The invention may allow a block polymer to be structured with a minimum of defects.
Abstract:
The present invention relates to a process for controlling the period of a nanostructured assemblage comprising a blend of block copolymers which is deposited on a surface or in a mold. Block copolymers are characterized by the possession of at least one of the constituent monomers respectively of each of the blocks of the block copolymers identical but exhibit different molecular weights. The control process is targeted at obtaining thicknesses of films or objects, with few nanostructuring defects, which are sufficiently great for the treated surface to be able to be used as masks for applications in microelectronics or for the objects resulting therefrom to exhibit previously unpublished mechanical, acoustic or optical characteristics.
Abstract:
The invention relates to a method for manufacturing a flat polymeric stack, said stack comprising one or more first and one second layer of (co)polymer (20, 30) stacked one on the other, the first underlying (co)polymer layer (20) not having undergone any prior treatment allowing its crosslinking, at least one of the (co)polymer layers initially being in a liquid or viscous state, said method being characterized in that the upper layer (30), known as the top coat (TC), is deposited on the first layer (20) in the form of a prepolymer composition (pre-TC), comprising one or more monomer(s) and/or dimer(s) and/or oligomer(s) and/or polymer(s) in solution, and in that it is then subjected to a heat treatment capable of causing a crosslinking reaction of the molecular chains within said layer (30, TC).
Abstract:
The invention relates to a process for reducing the defectivity of a block copolymer (BCP1) film, the lower surface of which is in contact with a preneutralized surface (N) of a substrate (S) and the upper surface of which is covered by an upper surface neutralization layer (TC) in order to make it possible to obtain an orientation of the nanodomains of the block copolymer (BCP1) perpendicularly to the two lower and upper interfaces, where the upper surface neutralization layer (TC) employed to cover the upper surface of the block copolymer (BCP1) film comprises a second block copolymer (BCP2).
Abstract:
The present invention relates to a process for producing nanostructured films obtained from block copolymers exhibiting a dispersity index of between 1.1 and 2, limits included, without nanostructuring defects, on a surface, in order for this treated surface to be able to be used as masks for applications in microelectronics.
Abstract:
The invention relates to a method of directional self-assembly lithography, said method comprising a step of depositing a block copolymer film on a layer (20) neutral with respect the block copolymer, said block copolymer film being for use as a lithography mask, said method being characterized in that it comprises the following steps of:
depositing said neutral layer (20) on a surface of a substrate (10), said neutral layer (20) being of the carbon or fluoro-carbon type deposited to a thickness greater than 1.5 times the thickness of the block copolymer film (40), crosslinking said neutral layer, depositing said block copolymer film, comprising at least one silylated block, on said crosslinked neutral layer (30), subjecting the stack to an assembly temperature in order to nanostructure said block copolymer, removing (G1) at least one of the nano-domains (41, 42) from the nanostructured block copolymer film (40), in order to create a pattern intended to be transferred by etching (G2, G3, G4) into the thickness of the substrate (10).
Abstract:
The invention relates to a crosslinkable prepolymer composition for use as a contrast layer. It also relates to a method for structuring an interface material. This method is characterized in particular by the following steps:
depositing, on a block copolymer film, a prepolymer composition layer comprising a plurality of functional monomers and at least one crosslinkable functional group within its polymer chain and, on the other hand, two chemically different crosslinking agents, each agent being capable of initiating the crosslinking of said prepolymer in response to a stimulation specific thereto, subjecting the stack to a first stimulation localized on first areas, so as to cause a crosslinking reaction of the molecular chains of said prepolymer, and subjecting the stack to a second stimulation, so as to cause crosslinking of the molecular chains of said prepolymer by the action of said second crosslinking agent in secondary areas.
Abstract:
The invention relates to a process for controlling the orientation of the nanodomains of a block copolymer (BCP), the lower interface of which is in contact with the surface, neutralized beforehand, of a substrate, the said block copolymer being capable of nanostructuring itself to give nanodomains with a predetermined period (L0), over a minimum thickness (t) at least equal to half of the said period (L0), the said process being characterized in that it consists in depositing the said block copolymer (BCP) on the said substrate, so that its total thickness (T+t) is at least two times greater and preferably at least three times greater than the said minimum thickness (t), and in then depositing, on the said block copolymer (BCP), an interface material which makes it possible to isolate it from the ambient atmosphere.