公开(公告)号：US10141449B2

公开(公告)日：2018-11-27

申请号：US15037610

申请日：2015-09-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili Wang ,  Hongda Sun ,  Fengjuan Liu ,  Lungpao Hsin

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/225 ,  H01L29/227 ,  H01L29/24 ,  H01L27/12

Abstract: The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.

公开(公告)号：US09793413B2

公开(公告)日：2017-10-17

申请号：US14771526

申请日：2014-10-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Li Zhang ,  Meili Wang ,  Fengjuan Liu

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/786

Abstract: The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.

公开(公告)号：US09379146B2

公开(公告)日：2016-06-28

申请号：US14429247

申请日：2014-07-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Li Zhang ,  Liangchen Yan ,  Fengjuan Liu

IPC: H01L21/768 ,  H01L21/283 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/283 ,  H01L21/76802 ,  H01L21/76885 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742

Abstract: A method for manufacturing an array substrate and a method for forming a through hole are provided. The method for manufacturing the array substrate comprise: coating photoresist in an insulating layer through-hole region on a substrate; depositing an insulating layer on the substrate provided with the photoresist in the insulating layer through-hole region; and stripping off the photoresist in the insulating layer through-hole region to form an insulating layer through hole. The manufacturing method simplifies the process of forming the insulating layer through hole.

Abstract translation: 提供一种阵列基板的制造方法及形成通孔的方法。 制造阵列基板的方法包括：在基板上的绝缘层通孔区域中涂覆光致抗蚀剂; 在设置有所述光致抗蚀剂的所述基板上的所述绝缘层通孔区域内淀积绝缘层; 并剥离绝缘层通孔区域中的光致抗蚀剂以形成绝缘层通孔。 该制造方法简化了形成绝缘层通孔的工艺。

公开(公告)号：US20160011158A1

公开(公告)日：2016-01-14

申请号：US14574841

申请日：2014-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaodi Liu ,  Cuili Gai ,  Fengjuan Liu ,  Gang Wang

IPC: G01N33/00 ,  H05B3/03 ,  H01L29/26 ,  H01L29/22 ,  H01L29/786

CPC classification number: G01N33/0027 ,  G01N33/0062 ,  H01L29/22 ,  H01L29/26 ,  H01L29/786

Abstract: Embodiments of the present invention provide a gas detection sensor, a display panel, and a display device. The gas detection sensor comprises: a gas sensitive part; two detection electrodes electrically connected with each other through the gas sensitive part; and a protective layer enclosing the gas sensitive part and the detection electrodes. When one of the detection electrodes is applied with a detecting signal, the detecting signal is output from the other detection electrode after being modulated by the gas sensitive part, and a voltage signal output by the other detection electrode is related to a nature of the outside air to which the gas sensitive part is exposed, thereby a detection on air quality may be achieved through detecting the voltage signal output from the other detection electrode, such that a simply structured and portable gas detection sensor can be realized.

Abstract translation: 本发明的实施例提供一种气体检测传感器，显示面板和显示装置。 气体检测传感器包括：气体敏感部件; 两个检测电极通过气体敏感部分彼此电连接; 以及包围气体敏感部分和检测电极的保护层。 当检测电极中的一个被施加检测信号时，在被气体敏感部分调制之后，从另一检测电极输出检测信号，并且由另一个检测电极输出的电压信号与外部的性质有关 可以通过检测从其他检测电极输出的电压信号来实现空气质量的检测，从而可以实现简单结构化的便携式气体检测传感器。

公开(公告)号：US20240243206A1

公开(公告)日：2024-07-18

申请号：US18686604

申请日：2021-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai Yuan ,  Lingyan Liang ,  Hongtao Cao ,  Fengjuan Liu ,  Ce Ning ,  Fei Wang ,  Hehe Hu ,  Xiaolong Wang

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1222 ,  H01L29/04 ,  H01L29/66742

Abstract: A thin film transistor; includes a substrate; and a semiconductor layer provided on the substrate. The semiconductor layer includes a first surface proximate to the substrate and a second surface away from the substrate, and the semiconductor layer is made of a metal oxide semiconductor material. The semiconductor layer has a channel region; and crystals of metal oxide semiconductor are formed at least in the channel region of the semiconductor layer and proximate to the first surface or the second surface.

公开(公告)号：US20240186379A1

公开(公告)日：2024-06-06

申请号：US17798347

申请日：2021-10-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu ,  Fengjuan Liu ,  Guangcai Yuan ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Kun Zhao

IPC: H01L29/10 ,  H01L21/385 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/1041 ,  H01L21/385 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: Provided is a method for manufacturing a metal-oxide thin-film transistor (TFT). The method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.

公开(公告)号：US11640095B2

公开(公告)日：2023-05-02

申请号：US16908547

申请日：2020-06-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Hongda Sun

IPC: G02F1/15 ,  G02F1/155 ,  G02F1/163 ,  H01L27/32

Abstract: A display cover plate, a manufacturing method therefor and a display device are provided, The display cover plate includes: a substrate; and an electrochromic unit on the substrate, the electrochromic unit includes: a first electrode on the substrate; an electrochromic layer on a side of the first electrode away from the substrate; and a second electrode on a side of the electrochromic layer away from the substrate, wherein the first electrode and the second electrode are configured to generate an electric field, and the electrochromic layer allows light of different colors to pass through based on a change of the electric field.

公开(公告)号：US20220344517A1

公开(公告)日：2022-10-27

申请号：US17763297

申请日：2021-04-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Zhengliang Li ,  Ce Ning ,  Hehe Hu ,  Nianqi Yao ,  Kun Zhao ,  Fengjuan Liu ,  Tianmin Zhou ,  Liping Lei

IPC: H01L29/786

Abstract: A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. The active layer includes a channel layer and at least one channel protection layer; a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material. The at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer include non-rare earth metal elements including In, Ga, Zn and Sn.

公开(公告)号：US20210191213A1

公开(公告)日：2021-06-24

申请号：US16908547

申请日：2020-06-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Hongda SUN

IPC: G02F1/155 ,  G02F1/163

Abstract: A display cover plate, a manufacturing method therefor and a display device are provided, The display cover plate includes: a substrate; and an electrochromic unit on the substrate, the electrochromic unit includes: a first electrode on the substrate; an electrochromic layer on a side of the first electrode away from the substrate; and a second electrode on a side of the electrochromic layer away from the substrate, wherein the first electrode and the second electrode are configured to generate an electric field, and the electrochromic layer allows light of different colors to pass through based on a change of the electric field.

公开(公告)号：US20200295099A1

公开(公告)日：2020-09-17

申请号：US15774921

申请日：2017-11-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Youngsuk Song

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: The present application discloses a display substrate. The display substrate includes a base substrate; a plurality of thin film transistors for driving image display on the base substrate; a planarization layer on a side of the plurality of thin film transistors distal to the base substrate; and a pixel definition layer defining a plurality of subpixel regions. The display substrate includes a recess extending into the planarization layer and in an inter-subpixel region of the display substrate. The display substrate further includes a recess fill layer in the recess. The recess fill layer has a light transmittance rate lower than that of the planarization layer.