摘要:
A sensor semiconductor package and a fabrication method thereof are provided in the present application. The fabrication method comprises steps of: forming a plurality of grooves on a wafer between bond pads on active surfaces of every adjacent chips; forming metal layers in the grooves for electrically connecting with the bond pads of adjacent chips; thinning the non-active surfaces to expose the metal layers therefrom; forming a cover layer on the non-active surfaces with the metal layers are exposed therefrom; forming a solder resist layer on the covering layer and the conductive wirings with terminals of the conductive wirings are exposed therefrom; and cutting along cutting paths between every sensor chips to form a plurality of sensor semiconductor packages. Accordingly, the prior art problems such as misalignment of forming beveled grooves, concentrated stress and breakage can be solved.
摘要:
A sensor-type semiconductor package and a fabrication method thereof are provided. The fabrication method of the sensor-type semiconductor package includes steps of: providing a wafer having sensor chips; attaching light-permeable bodies to the sensor chips, wherein each light-permeable body has a covering layer and an adhesive layer; singulating the wafer so as to obtain a plurality of separated sensor chips with the light-permeable bodies attached thereon; attaching and electrically connecting the separated sensor chips to a substrate module having substrates, forming an encapsulant encapsulating the sensor chips and the light-permeable bodies; cutting the encapsulant along edges of the light-permeable bodies to a depth at least corresponding the bottom edges of the covering layers; removing the covering layers with the encapsulant mounted thereon to expose the light-permeable bodies; and cutting between the substrates to obtain a plurality of sensor-type semiconductor packages.
摘要:
The present invention provides a sensor-type semiconductor package and a method for fabricating the same. The method includes the steps of: providing a wafer having a plurality of sensor chips for mounting the wafer on a carrier board having an insulation layer, a plurality of conductive traces, and a substrate; forming a plurality of grooves among the solder pads on the active surfaces of the adjacent sensor chips, so as to expose the conductive traces and form a metal layer in the grooves, to electrically connect to the solder pads on the active surfaces of the adjacent sensor chips and the conductive traces; disposing a transparent medium on the wafer to cover the sensing areas of the sensor chips; removing the substrate, so as to expose the conductive traces and the insulation layer; and cutting the sensor chips along the borders to form a plurality of sensor-type semiconductor packages. This can avoid the formation of slanted grooves on the non-active surface on the wafer and shift in position of the grooves due to failure to align with the cutting lines among the sensor chips, as observed in prior art. Consequently, the problems such as stress concentration and cracking are likely to occur in the contact points of the traces formed in the slanted grooves and the traces in the active surfaces.
摘要:
A sensor-type semiconductor package and a fabrication method thereof are provided. The fabrication method of the sensor-type semiconductor package includes steps of: providing a wafer having sensor chips; attaching light-permeable bodies to the sensor chips, wherein each light-permeable body has a covering layer and an adhesive layer; singulating the wafer so as to obtain a plurality of separated sensor chips with the light-permeable bodies attached thereon; attaching and electrically connecting the separated sensor chips to a substrate module having substrates, forming an encapsulant encapsulating the sensor chips and the light-permeable bodies; cutting the encapsulant along edges of the light-permeable bodies to a depth at least corresponding the bottom edges of the covering layers; removing the covering layers with the encapsulant mounted thereon to expose the light-permeable bodies; and cutting between the substrates to obtain a plurality of sensor-type semiconductor packages.
摘要:
Disclosed are a multi-layer substrate and a manufacturing method of the multi-layer substrate. By employing a carrier to alternately form dielectric layers and metal structure layers thereon. Each dielectric layer adheres with the adjacent dielectric layer to embed the metal structure layers in the dielectric layers corresponding thereto. Comparing with prior arts, which have to use prepregs when hot pressing and adhering different layers of different materials, the present invention takes fewer processes, thus, fewer kinds of materials without using prepregs. Therefore, the present invention can promote the entire quality and yield of manufacturing the multi-layer substrate to satisfy mechanical characteristic matching of the multi-layer substrate and to reduce cost of the whole manufacturing process. Significantly, the multi-layer substrate having thin dielectric layers according to the present invention can satisfy the concern of impedance matching therefore, and can reduce crosstalk influence to keep good signal integrity therein.
摘要:
A submount comprising a chip mounting area, a first bonding pad and a connecting portion is provided. An LED chip is mounted on the chip mounting area. The first bonding pad is electrically connected to an electrode of the LED chip. The connecting portion has a first hollow portion and is disposed between the chip mounting area and the first bonding pad. The first hollow portion is located between the chip mounting area and the first bonding pad. The first hollow portion is located in a central region of the connecting portion.
摘要:
A light emitting diode (LED) package and a manufacturing method therefor are disclosed. In one aspect, a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue; encapsulate the at least one light-emitting diode chip with a second light transmission insulation material; and perform a drying step that forms the sticky member and the second light transmission insulation material into shape.
摘要:
A base apparatus includes a base and two finger devices. The base has a first surface and two opposite sides. The finger devices are respectively mounted on the sides of the base, are made of conductive material, and each of the finger devices has multiple fingers. The fingers are extended on the first surface of the base, wherein the fingers of a first finger device are arranged respectively corresponding to the fingers of a second finger device whereby each pair of corresponding fingers supports an illuminating device. The base has a height, each of the fingers has a width and the width is smaller than the height. When the LED is mounted onto a substrate, the LED can be mounted on the substrate by its side so that an entire assembly height of the LED is reduced and is equal to the width of the LED.
摘要:
A method and apparatus for measuring a wafer position on a lower electrode in a plasma etching device are disclosed herein. A wafer is generally placed on a lower electrode in a process chamber of a plasma etching device. Such a wafer (i.e., semiconductor wafer) generally comprises a front side and a back side. A differential pressure gradient between the front side and the back side of the wafer is determined, and thereafter, a position of the wafer on the lower electrode can be measured utilizing the differential pressure gradient.
摘要:
A surface mounting optoelectronic device is provided. The surface mounting optoelectronic device comprises a circuit board, a conductive layer, an auto-focus LED chip, a flash LED chip, a reflector and an encapsulant. The auto-focus LED chip and the flash LED chip are located on the conductive layer. The reflector is located on the edge of the circuit board. The encapsulant is filled into the reflector to hermetically seal the auto-focus LED chip and the flash LED chip.