MIM capacitor and method of fabricating same
    11.
    发明授权
    MIM capacitor and method of fabricating same 有权
    MIM电容器及其制造方法

    公开(公告)号:US07821051B2

    公开(公告)日:2010-10-26

    申请号:US11625883

    申请日:2007-01-23

    IPC分类号: H01L27/108

    摘要: A damascene MIM capacitor and a method of fabricating the MIM capacitor. The MIN capacitor includes a dielectric layer having top and bottom surfaces; a trench in the dielectric layer, the trench extending from the top surface to the bottom surface of the dielectric layer; a first plate of a MIM capacitor comprising a conformal conductive liner formed on all sidewalls and extending along a bottom of the trench, the bottom of the trench coplanar with the bottom surface of the dielectric layer; an insulating layer formed over a top surface of the conformal conductive liner; and a second plate of the MIM capacitor comprising a core conductor in direct physical contact with the insulating layer, the core conductor filling spaces in the trench not filled by the conformal conductive liner and the insulating layer. The method includes forming portions of the MIM capacitor simultaneously with damascene interconnection wires.

    摘要翻译: 一种镶嵌MIM电容器和一种制造MIM电容器的方法。 MIN电容器包括具有顶表面和底表面的电介质层; 电介质层中的沟槽,沟槽从电介质层的顶表面延伸到底表面; MIM电容器的第一板包括形成在所有侧壁上并沿着沟槽的底部延伸的共形导电衬垫,沟槽的底部与电介质层的底表面共面; 绝缘层,形成在所述共形导电衬垫的顶表面上; 以及MIM电容器的第二板,其包括与所述绝缘层直接物理接触的芯导体,所述芯导体填充所述沟槽中的未被所述共形导电衬垫和所述绝缘层填充的空间。 该方法包括与镶嵌互连线同时形成MIM电容器的部分。

    MIM capacitor and method of fabricating same
    13.
    发明授权
    MIM capacitor and method of fabricating same 有权
    MIM电容器及其制造方法

    公开(公告)号:US07223654B2

    公开(公告)日:2007-05-29

    申请号:US11106887

    申请日:2005-04-15

    IPC分类号: H01L21/8242 H01L21/20

    摘要: A damascene MIM capacitor and a method of fabricating the MIM capacitor. The MIN capacitor includes a dielectric layer having top and bottom surfaces; a trench in the dielectric layer, the trench extending from the top surface to the bottom surface of the dielectric layer; a first plate of a MIM capacitor comprising a conformal conductive liner formed on all sidewalls and extending along a bottom of the trench, the bottom of the trench coplanar with the bottom surface of the dielectric layer; an insulating layer formed over a top surface of the conformal conductive liner; and a second plate of the MIM capacitor comprising a core conductor in direct physical contact with the insulating layer, the core conductor filling spaces in the trench not filled by the conformal conductive liner and the insulating layer. The method includes forming portions of the MIM capacitor simultaneously with damascene interconnection wires.

    摘要翻译: 一种镶嵌MIM电容器和一种制造MIM电容器的方法。 MIN电容器包括具有顶表面和底表面的电介质层; 电介质层中的沟槽,沟槽从电介质层的顶表面延伸到底表面; MIM电容器的第一板包括形成在所有侧壁上并沿着沟槽的底部延伸的共形导电衬垫,沟槽的底部与电介质层的底表面共面; 绝缘层,形成在所述共形导电衬垫的顶表面上; 以及MIM电容器的第二板,其包括与所述绝缘层直接物理接触的芯导体,所述芯导体填充所述沟槽中的未被所述共形导电衬垫和所述绝缘层填充的空间。 该方法包括与镶嵌互连线同时形成MIM电容器的部分。

    Method of forming a micro-electromechanical (MEMS) switch
    14.
    发明授权
    Method of forming a micro-electromechanical (MEMS) switch 失效
    形成微机电(MEMS)开关的方法

    公开(公告)号:US07726010B2

    公开(公告)日:2010-06-01

    申请号:US11968896

    申请日:2008-01-03

    IPC分类号: H01H11/00 H01H65/00

    摘要: A method of fabricating a MEMS switch having a free moving inductive element within in micro-cavity guided by at least one inductive coil. The switch consists of an upper inductive coil at one end of a micro-cavity; optionally, a lower inductive coil; and a free-moving inductive element preferably made of magnetic material. The coils are provided with an inner permalloy core. Switching is achieved by passing a current through the upper coil, inducing a magnetic field unto the inductive element. The magnetic field attracts the free-moving inductive element upwards, shorting two open conductive wires, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the conductive wires open. When the chip is not mounted with the correct orientation, the lower coil pulls the free-moving inductive element back at its original position.

    摘要翻译: 一种制造具有由至少一个感应线圈引导的微腔内的自由运动的感应元件的MEMS开关的方法。 开关由微腔一端的上感应线圈组成; 可选地,下感应线圈; 以及优选由磁性材料制成的自由移动的电感元件。 线圈设有内坡道合金芯。 通过使电流通过上部线圈,从而产生电感元件的磁场来实现切换。 磁场向上吸引自由移动的感应元件,短路两根开放的导线,闭合开关。 当电流停止或反转时,自由移动的磁性元件通过重力返回到微腔的底部并且导线打开。 当芯片没有以正确的方向安装时,下线圈将自由移动的感应元件拉回其原始位置。

    Method of fabrication of interconnect structures
    18.
    发明授权
    Method of fabrication of interconnect structures 失效
    互连结构的制造方法

    公开(公告)号:US07563710B2

    公开(公告)日:2009-07-21

    申请号:US11860602

    申请日:2007-09-25

    IPC分类号: H01L21/4763

    摘要: A method of forming a damascene wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor.

    摘要翻译: 一种形成镶嵌线的方法。 该方法包括:在电介质层的顶表面上形成掩模层; 在掩模层中形成开口; 在电介质层中形成沟槽,其中电介质层不被掩模层保护; 使掩模层下方的沟槽的侧壁凹陷; 在沟槽和掩模层的所有暴露表面上形成共形导电衬垫; 用芯电导体填充沟槽; 去除在电介质层的顶表面上方延伸的导电衬垫的部分,并去除掩模层; 以及在所述芯导体的顶表面上形成导电帽。

    SELF-ASSEMBLED MATERIAL PATTERN TRANSFER CONTRAST ENHANCEMENT
    19.
    发明申请
    SELF-ASSEMBLED MATERIAL PATTERN TRANSFER CONTRAST ENHANCEMENT 审中-公开
    自组装材料模式转移对比增强

    公开(公告)号:US20090117360A1

    公开(公告)日:2009-05-07

    申请号:US11933760

    申请日:2007-11-01

    IPC分类号: G03C1/73 B05D3/00 B32B27/06

    摘要: A non-photosensitive polymeric resist containing at least two immiscible polymeric block components is deposited on the planar surface. The non-photosensitive polymeric resist is annealed to allow phase separation of immiscible components and developed to remove at least one of the at least two polymeric block components. Nanoscale features, i.e., features of nanometer scale, including at least one recessed region having a nanoscale dimension is formed in the polymeric resist. The top surface of the polymeric resist is modified for enhanced etch resistance by an exposure to an energetic beam, which allows the top surface of the patterned polymeric resist to become more resistant to etching processes and chemistries. The enhanced ratio of etch resistance between the two types of surfaces provides improved image contrast and fidelity between areas having the top surface and the at least one recessed region.

    摘要翻译: 含有至少两个不混溶的聚合物嵌段组分的非光敏聚合物抗蚀剂沉积在平面上。 将非光敏聚合物抗蚀剂退火以允许不相容组分的相分离并显影以除去至少两种聚合物嵌段组分中的至少一种。 在聚合物抗蚀剂中形成纳米尺度特征,即纳米尺度的特征,包括具有纳米级尺寸的至少一个凹陷区域。 聚合物抗蚀剂的顶表面通过暴露于能量束而被改进以提高耐蚀刻性,这允许图案化聚合物抗蚀剂的顶表面变得更耐蚀刻工艺和化学物质。 两种类型表面之间的增强的耐蚀刻比提供了改善的图像对比度和具有顶表面和至少一个凹陷区域的区域之间的保真度。