公开(公告)号：US09202726B2

公开(公告)日：2015-12-01

申请号：US14159055

申请日：2014-01-20

Applicant: DENSO CORPORATION

Inventor： Yoshinori Tsuchiya ,  Shinichi Hoshi ,  Masaki Matsui

IPC: H01L21/302 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/306 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L21/67069 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7787

Abstract: A manufacturing method of a semiconductor device including arranging a compound semiconductor above a stage of a chamber, supplying an etching gas into the chamber, and generating a plasma in the chamber is provided. The compound semiconductor includes a group-III element nitride as a main component. A surface of the compound semiconductor is processed by a dry etching. Light is irradiated into the chamber during the generating of the plasma. A dry etching apparatus including a chamber including a stage, on which a compound semiconductor is mounted, and a light source irradiating light into the chamber is provided. The chamber is supplied with an etching gas. A plasma is generated in the chamber. A surface of the compound semiconductor is an object of a dry etching.

Abstract translation: 提供一种半导体器件的制造方法，其包括将化合物半导体放置在室的阶段之上，将蚀刻气体供应到所述室中，以及在所述室中产生等离子体。 化合物半导体包括III族元素氮化物作为主要成分。 化学半导体的表面通过干蚀刻进行处理。 在产生等离子体期间，光被照射到腔室中。 提供了一种干蚀刻装置，其包括具有其上安装有化合物半导体的平台的腔室和将光照射到腔室中的光源。 该室被供应蚀刻气体。 在室内产生等离子体。 化合物半导体的表面是干蚀刻的目的。

公开(公告)号：US12293945B2

公开(公告)日：2025-05-06

申请号：US17708490

申请日：2022-03-30

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  National University Corporation Tokai National Higher Education and Research System ,  HAMAMATSU PHOTONICS K.K.

Inventor： Shinichi Hoshi ,  Masatake Nagaya ,  Chiaki Sasaoka ,  Daisuke Kawaguchi ,  Keisuke Hara

IPC: H01L21/78 ,  H01L21/02 ,  H10D30/47 ,  H10D62/85

Abstract: A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.

公开(公告)号：US10084052B2

公开(公告)日：2018-09-25

申请号：US15514167

申请日：2015-09-14

Applicant: DENSO CORPORATION

Inventor： Yoshinori Tsuchiya ,  Shinichi Hoshi ,  Masaki Matsui ,  Kenji Itoh

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/51 ,  H01L29/49 ,  H01L21/28

CPC classification number: H01L29/4236 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/786

Abstract: In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5×1011 cm−2 and allows a normally-off element to be reliably provided.

公开(公告)号：US10062747B2

公开(公告)日：2018-08-28

申请号：US15573200

申请日：2016-06-14

Applicant: DENSO CORPORATION

Inventor： Youngshin Eum ,  Kazuhiro Oyama ,  Yasushi Higuchi ,  Shinichi Hoshi

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/778 ,  H01L29/812 ,  H01L29/20 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/06 ,  H01L29/0615 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/812

Abstract: In a semiconductor device, an AlGaN layer includes a first AlGaN layer and a second AlGaN layer. The second AlGaN layer is positioned between a gate structure portion and a drain electrode and is divided into multiple parts in an arrangement direction in which the gate structure portion and the drain electrode are arranged. A second Al mixed crystal ratio of the second AlGaN layer is less than a first Al mixed crystal ratio of the first AlGaN layer. Accordingly, the semiconductor device is a normally-off-type device and is capable of restricting a decrease of a breakdown voltage and an increase of an on-resistance.

公开(公告)号：US20150053996A1

公开(公告)日：2015-02-26

申请号：US14389185

申请日：2012-11-01

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO ,  DENSO CORPORATION

Inventor： Tetsuo Narita ,  Kenji Ito ,  Kazuyoshi Tomita ,  Nobuyuki Otake ,  Shinichi Hoshi ,  Masaki Matsui

IPC: H01L29/20 ,  C30B29/40 ,  C30B25/18 ,  C30B25/08 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L29/2003 ,  C30B25/08 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/0254 ,  H01L29/045 ,  H01L33/007

Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.

Abstract translation: 促进了硅单晶衬底上的III族氮化物单晶的阶跃流生长。 在硅单晶衬底的表面上形成定向为硅单晶的<111>轴的氧化物层，并且III族氮化物单晶在氧化物层的表面上结晶。 因此，经历晶体生长的III族氮化物单晶的<0001>轴取向为氧化物的c轴。 当硅单晶衬底具有误差角时，发生III族氮化物单晶的阶跃流生长。 通过对形成在硅单晶和氧化物的界面处的氧化硅层进行脱氧，氧化物的取向得到改善。