摘要:
A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.
摘要翻译:在下面的金属互连结构上形成由元素金属衬垫,金属氮化物衬垫,Ti衬垫,铝部分和金属氮化物盖的从底部到顶部的垂直金属堆叠。 垂直金属叠层在升高的温度下退火,以通过Ti衬垫与铝部分的材料反应而引起TiAl 3衬层的形成。 TiAl 3衬垫的材料对电迁移是耐受的,从而对包括元素金属衬垫,金属氮化物衬垫,TiAl 3衬里,铝部分和金属氮化物盖的垂直金属堆叠提供增强的电迁移阻力。 在金属氮化物盖在加工过程中遭受侵蚀的区域中,增强的耐电迁移性的作用可能更为突出。
摘要:
A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.
摘要翻译:在下面的金属互连结构上形成由元素金属衬垫,金属氮化物衬垫,Ti衬垫,铝部分和金属氮化物盖的从底部到顶部的垂直金属堆叠。 垂直金属叠层在升高的温度下退火,以通过Ti衬垫与铝部分的材料反应而引起TiAl 3衬层的形成。 TiAl 3衬垫的材料对电迁移是耐受的,从而对包括元素金属衬垫,金属氮化物衬垫,TiAl 3衬里,铝部分和金属氮化物盖的垂直金属堆叠提供增强的电迁移阻力。 在金属氮化物盖在加工过程中遭受侵蚀的区域中,增强的耐电迁移性的作用可能更为突出。
摘要:
A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers. An upper semiconductor layer covers the first vertically stacked conductor layers, the air gap and the second plurality of vertically stacked conductor layers.
摘要:
A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers. An upper semiconductor layer covers the first vertically stacked conductor layers, the air gap and the second plurality of vertically stacked conductor layers.
摘要:
Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity having a planar surface using a reverse damascene process.
摘要:
An underlying interconnect level containing underlying W vias embedded in a dielectric material layer are formed on a semiconductor substrate. A metallic layer stack comprising, from bottom to top, a low-oxygen-reactivity metal layer, a bottom transition metal layer, a bottom transition metal nitride layer, an aluminum-copper layer, an optional top transition metal layer, and a top transition metal nitride layer. The metallic layer stack is lithographically patterned to form at least one aluminum-based metal line, which constitutes a metal interconnect structure. The low-oxygen-reactivity metal layer enhances electromigration resistance of the at least one aluminum-based metal line since formation of compound between the bottom transition metal layer and the dielectric material layer is prevented by the low-oxygen-reactivity metal layer, which does not interact with the dielectric material layer.
摘要:
A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower sacrificial material used to form a lower cavity. The method further includes forming a cavity via connecting the lower cavity to an upper cavity. The cavity via is formed with a top view profile of rounded or chamfered edges. The method further includes forming an upper sacrificial material within and above the cavity via, which has a resultant surface based on the profile of the cavity via. The upper cavity is formed with a lid that is devoid of structures that would interfere with a MEMS beam, including: depositing a lid material on the resultant surface of the upper sacrificial material; and venting the upper sacrificial material to form the upper cavity such the lid material forms the lid which conforms with the resultant surface of the upper sacrificial material.
摘要:
A circuit breaker includes separable contacts, an operating mechanism structured to open and close the separable contacts, and a trip circuit including a trip coil and a fault detector. The fault detector energizes the trip coil to cause the operating mechanism to open the separable contacts. A test circuit is structured to test the trip coil and determine an open circuit condition thereof. An annunciation circuit is structured to annunciate the open circuit condition of the trip coil.
摘要:
Disclosed is a transistor structure, having a completely silicided extrinsic base for reduced base resistance Rb. Specifically, a metal silicide layer covers the extrinsic base, including the portion of the extrinsic base that extends below the upper portion of a T-shaped emitter. One exemplary technique for ensuring that the metal silicide layer covers this portion of the extrinsic base requires tapering the upper portion of the emitter. Such tapering allows a sacrificial layer below the upper portion of the emitter to be completely removed during processing, thereby exposing the extrinsic base below and allowing the metal layer required for silicidation to be deposited thereon. This metal layer can be deposited, for example, using a high pressure sputtering technique to ensure that all exposed surfaces of the extrinsic base, even those below the upper portion of the emitter, are covered.
摘要:
Compositions and methods for the detection, prevention, or treatment of anthrax or other infectious diseases. In one aspect, the present invention provides methods for immunizing humans or animals against Bacillus anthracis or other capsulated pathogens. The methods include administering a capsular polypeptide of a pathogen of interest and a CD40 agonist to a human or animal. The capsular polypeptide or the CD40 agonist is administered in such an amount or frequency that an immunoprotective response can be elicited in the human or animal against the pathogen of interest. In another aspect, the present invention provides methods of using passive immunization with anti-capsular polypeptide antibodies to prevent or treat infections caused by Bacillus anthracis or other pathogens. In yet another aspect, the present invention provides methods useful for diagnosis of anthrax by detection of capsular polypeptide in serum or other biological samples.