公开(公告)号：US20180204736A1

公开(公告)日：2018-07-19

申请号：US15874388

申请日：2018-01-18

Applicant: Entegris, Inc.

Inventor： Daniela White ,  Thomas Parson ,  Michael White ,  Emmanuel I. Cooper ,  Atanu Das

IPC: H01L21/321 ,  C09G1/16 ,  C09G1/04 ,  C01F17/00 ,  C08L33/10 ,  C08L33/08

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

公开(公告)号：US11905491B2

公开(公告)日：2024-02-20

申请号：US17492257

申请日：2021-10-01

Applicant: Entegris, Inc.

Inventor： Daniela White ,  YoungMin Kim ,  Michael L. White

IPC: C11D3/30 ,  C11D11/00 ,  C11D7/32 ,  C11D7/26 ,  H01L21/02 ,  C11D7/34 ,  C11D7/50

CPC classification number: C11D11/0047 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5022 ,  H01L21/02065

Abstract: In general, the invention provides high pH cleaning compositions for dielectric surfaces such as PETEOS, SiO2, thermal oxide, silicon nitride, silicon, etc. The compositions of the invention afford superior surface wetting, dispersion of particles and organic residues, and prevents redeposition and re-agglomeration of the dispersed residue during cleaning to afford superior cleaning and low defectivity.

公开(公告)号：US20230407176A1

公开(公告)日：2023-12-21

申请号：US18211220

申请日：2023-06-16

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Daniela White

IPC: C09K13/00 ,  H01L21/306 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/30604 ,  H01L21/32134

Abstract: The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfactant, and are useful in the etching of polysilicon in general, and in particular in both the operation of polysilicon trim as well as polysilicon exhume. The utilization of an added oxidizing agent was found to reduce selectivity of silicon etching based on the silicon crystal orientation, which was found to reduce roughness and the presence of residual silicon residues, such as silicon (111) residues after the etching step.

公开(公告)号：US20230323248A1

公开(公告)日：2023-10-12

申请号：US18124355

申请日：2023-03-21

Applicant: ENTEGRIS, INC.

Inventor： Volley Wang ,  Atanu K. Das ,  Michael L. White ,  Chun-I Lee ,  Nilesh Gunda ,  Daniela White ,  Donald Frye

IPC: C11D3/30 ,  C11D3/43 ,  C11D17/00 ,  C11D1/66 ,  C11D3/00 ,  C11D3/24 ,  C11D11/00

CPC classification number: C11D3/0042 ,  C11D1/66 ,  C11D3/245 ,  C11D3/30 ,  C11D3/43 ,  C11D11/0047 ,  C11D17/0008

Abstract: The invention provides compositions useful in post-CMP cleaning operations where ceria is present. In one aspect, the invention provides a composition comprising a reducing agent; a chelating agent; an amino(C6-C12 alkyl)alcohol; and water; wherein the composition has a pH of less than about 8. The compositions of the invention were found to show improved ceria removal on, for example, poly silicon (poly Si) substrates. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in one or more containers, selected components of the compositions.

公开(公告)号：US11530356B2

公开(公告)日：2022-12-20

申请号：US17388990

申请日：2021-07-29

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Emanuel I. Cooper ,  Daniela White

IPC: C09K13/06 ,  H01L21/311 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213 ,  C09K13/08

Abstract: Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.

公开(公告)号：US10731109B2

公开(公告)日：2020-08-04

申请号：US15951023

申请日：2018-04-11

Applicant: Entegris, Inc.

Inventor： Donald Frye ,  Jun Liu ,  Daniela White ,  Michael White

IPC: C11D3/30 ,  C11D3/00 ,  C11D11/00 ,  C11D3/33 ,  C11D3/20 ,  C11D3/36 ,  H01L21/02 ,  C11D3/04 ,  C11D3/28

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.

公开(公告)号：US20180291309A1

公开(公告)日：2018-10-11

申请号：US15951023

申请日：2018-04-11

Applicant: Entegris, Inc.

Inventor： Donald Frye ,  Jun Liu ,  Daniela White ,  Michael White

IPC: C11D3/00 ,  C11D3/30 ,  C11D3/33 ,  C11D3/20 ,  C11D11/00

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.

公开(公告)号：US12203022B2

公开(公告)日：2025-01-21

申请号：US17855603

申请日：2022-06-30

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  David Kuiper ,  Susan Dimeo

IPC: C09K13/08 ,  C09K13/06 ,  H01L21/311

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：US11845917B2

公开(公告)日：2023-12-19

申请号：US16694426

申请日：2019-11-25

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Donald Frye ,  Elizabeth Thomas ,  Jun Liu ,  Michael White

IPC: C09K13/00 ,  C11D7/32 ,  C11D11/00 ,  C11D7/34 ,  B08B3/08 ,  C11D7/06 ,  H01L21/02 ,  C11D7/26

CPC classification number: C11D7/3218 ,  B08B3/08 ,  C09K13/00 ,  C11D7/06 ,  C11D7/265 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/02074

Abstract: A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.

公开(公告)号：US20230295537A1

公开(公告)日：2023-09-21

申请号：US18117175

申请日：2023-03-03

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Chao-Yu Wang ,  Daniela White ,  Michael L. White

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/34 ,  C11D7/50 ,  H01L21/02

CPC classification number: C11D7/3218 ,  C11D11/0047 ,  C11D7/34 ,  C11D7/3272 ,  C11D7/5022 ,  H01L21/02074

Abstract: The invention provides compositions useful in post-CMP cleaning operations, particularly those substrates which contain exposed copper surfaces. The compositions of the invention provide excellent cleaning of such substrates while showing fewer defects from silica and organic materials present at the surface of the substrate. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in two or more containers, the components of the compositions.