Abstract:
Provide is a curable composition for imprints, capable of effectively suppressing chipping of the cured pattern. A curable composition for imprints comprising (A) curable compound and (B) photo-polymerization initiator, having a moisture content ratio, relative to the total weight of all components excluding solvent, of less than 0.8% by weight.
Abstract:
Provided is the pattern formability and line edge roughness of the resultant substrate.An underlay film composition for imprints comprising a compound (A) and a solvent (B), the compound (A) having at least either one of a group (Ka) capable of covalently bonding and/or interacting with a substrate, and, a group (Kb) capable of covalently bonding and/or interacting with a curable composition for imprints, an Ohnishi parameter (Z) calculated from (equation 1) of 3.8 or larger, and a molecular weight of 400 or larger: the Ohnishi parameter=(total number of atoms)/(number of carbon atoms−number of oxygen atoms) (Equation 1)
Abstract:
Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.
Abstract:
There is provided a pattern formation method comprising: a step (1) of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition which contains a resin of which, due to a polarity being increased by an action of an acid, solubility decreases with respect to a developer which includes an organic solvent; a step (2) of exposing the film to an actinic ray or radiation; a step (3) of forming a target process pattern by developing the film using a developer which includes an organic solvent; and a step (4) of obtaining a processed pattern by applying a processing agent which includes a compound (x) which has at least one of a primary amino group and a secondary amino group with respect to the target process pattern.
Abstract:
Provided is a composition for forming underlying layer for imprints, which is excellent in surface flatness and adhesiveness. The composition for forming underlying layer for imprints comprises (A) a resin having an ethylenic unsaturated group (P), and a cyclic ether group (T) selected from oxiranyl group and oxetanyl group, and having a weight-average molecular weight of 1000 or larger; and, (B) a solvent.
Abstract:
Provided is an underlying film composition for imprints showing a good adhesiveness with a base and capable of reducing failure or defect of resist pattern. The underlying film composition for imprints comprising a curable main component and a urea-based crosslinking agent.
Abstract:
Provide a curable composition for imprint, which is improved in the surface roughness of the cured film. A curable composition for imprint comprising a polymerizable compound (A), a polymerization initiator (B), and a non-polymerizable compound (C), the non-polymerizable compound (C) comprising at least one species of surfactant (C1) which contains 20% by mass or more of fluorine atom, and, at least one species of polymer (C2) which contains 3% by mass or more and less than 20% by mass of fluorine atom and/or 5% by mass or more and less than 40% by mass of silicon atom, and has a weight-average molecular weight (Mw) of 1,000 to 100,000.
Abstract:
Disclosed is a to provide a curable composition for imprints capable of keeping a good patternability and of producing less defects even after repetitive pattern transfer. The curable composition for imprints comprising: a polymerizable compound (A); a photo-polymerization initiator (B); and a non-polymerizable compound (C) having a polyalkylene glycol structure having at least one terminal hydroxy group, or at least one etherified terminal hydroxy group, and containing substantially no fluorine atom and no silicon atom.
Abstract:
A pattern forming, method, includes: (i) forming a film from an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and decomposing by an action of an acid to decrease a solubility of the compound (A) for an organic solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.
Abstract:
A pattern forming method comprising: (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains: (A) a resin, (B) a nonionic compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent.