公开(公告)号：US20130323890A1

公开(公告)日：2013-12-05

申请号：US13953446

申请日：2013-07-29

Applicant: GLOBALFOUNDRIES, Inc. ,  Intermolecular Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/02 ,  H01L29/66

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

公开(公告)号：US09224639B2

公开(公告)日：2015-12-29

申请号：US14807480

申请日：2015-07-23

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/461 ,  H01L21/768 ,  H01L21/321 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

公开(公告)号：US09123785B1

公开(公告)日：2015-09-01

申请号：US14202268

申请日：2014-03-10

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比衬垫更凹入，以进一步增强保护。 可以使用包含HF和HCl的混合物的湿式蚀刻溶液来相对于衬垫材料选择性地蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹陷在1.5和 2 nm。

公开(公告)号：US08809140B2

公开(公告)日：2014-08-19

申请号：US13953446

申请日：2013-07-29

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/336

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US08853081B2

公开(公告)日：2014-10-07

申请号：US13728079

申请日：2012-12-27

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Olov Karlsson ,  Sven Metzger

IPC: H01L21/306

CPC classification number: H01L21/306 ,  H01L21/266 ,  H01L21/31133 ,  H01L29/4966 ,  H01L29/517

Abstract: Provided are methods for processing semiconductor substrates to remove high-dose ion implanted (HDI) photoresist structures without damaging other structures made of titanium nitride, tantalum nitride, hafnium oxide, and/or hafnium silicon oxide. The removal is performed using a mixture of an organic solvent, an oxidant, a metal-based catalyst, and one of a base or an acid. Some examples of suitable organic solvents include dimethyl sulfoxide, n-ethyl pyrrolidone, monomethyl ether, and ethyl lactate. Transition metals in their zero-oxidation state, such as metallic iron or metallic chromium, may be used as catalysts in this mixture. In some embodiments, a mixture includes ethyl lactate, of tetra-methyl ammonium hydroxide, and less than 1% by weight of the metal-based catalyst. The etching rate of the HDI photoresist may be at least about 100 Angstroms per minute, while other structures may remain substantially intact.

Abstract translation: 提供了用于处理半导体衬底以去除高剂量离子注入（HDI）光致抗蚀剂结构而不损坏由氮化钛，氮化钽，氧化铪和/或氧化铪形成的其它结构的半导体衬底的方法。 使用有机溶剂，氧化剂，金属类催化剂和碱或酸之一的混合物进行除去。 合适的有机溶剂的一些实例包括二甲基亚砜，正乙基吡咯烷酮，单甲基醚和乳酸乙酯。 过渡金属的零氧化态，如金属铁或金属铬，可用作该混合物中的催化剂。 在一些实施方案中，混合物包括四甲基氢氧化铵的乳酸乙酯和小于1重量％的金属基催化剂。 HDI光致抗蚀剂的蚀刻速率可以为每分钟至少约100埃，而其它结构可保持基本完整。

公开(公告)号：US20130167867A1

公开(公告)日：2013-07-04

申请号：US13779277

申请日：2013-02-27

Applicant: Intermolecular Inc.

Inventor： Indranil De ,  Anh Duong

IPC: H01L21/02

CPC classification number: G03F7/327 ,  C11D7/3209 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/02052

Abstract: A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.

公开(公告)号：US20130125923A1

公开(公告)日：2013-05-23

申请号：US13738112

申请日：2013-01-10

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Sean Barstow ,  Olov Karlsson ,  Bei Li ,  James Mavrinac

IPC: H01L21/02

CPC classification number: H01L21/02052 ,  H01L21/02068 ,  H01L21/28518 ,  H01L29/665

Abstract: A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid.

Abstract translation: 提供了从基板的表面清除铂残留物的方法。 该方法首先将表面暴露于含有硝酸和盐酸混合物的第一溶液。 然后，将表面暴露于含有盐酸的第二溶液。

公开(公告)号：US09337030B2

公开(公告)日：2016-05-10

申请号：US14549158

申请日：2014-11-20

Applicant: Intermolecular Inc.

Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

公开(公告)号：US09245848B2

公开(公告)日：2016-01-26

申请号：US14488712

申请日：2014-09-17

Applicant: Intermolecular, Inc.

Inventor： Anh Duong ,  Tony Chiang ,  Zachary M. Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Jinhong Tong ,  Anna Tsizelmon

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  C09D129/04

CPC classification number: H01L23/5329 ,  C09D129/04 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

公开(公告)号：US08871860B2

公开(公告)日：2014-10-28

申请号：US13971613

申请日：2013-08-20

Applicant: Intermolecular, Inc.

Inventor： Anh Duong ,  Tony Chiang ,  Zachary M. Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Jinhong Tong ,  Anna Tsizelmon

IPC: H01L21/02 ,  H01L21/768 ,  C09D129/04 ,  H01L21/3105

CPC classification number: H01L23/5329 ,  C09D129/04 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

Abstract translation: 提出了修改图案化半导体衬底的方法，包括：提供包括电介质区域和导电区域的图案化半导体衬底表面; 以及将两亲表面改性剂施加到所述电介质区域以改变所述电介质区域。 在一些实施例中，修改电介质区域包括改变电介质区域的润湿角度。 在一些实施例中，改变润湿角度包括使介电区域的表面成为亲水性。 在一些实施方案中，方法还包括将水溶液施加到图案化的半导体衬底表面。 在一些实施例中，导电区域被水溶液选择性地增强。 在一些实施例中，方法还包括提供由低k电介质材料形成的电介质区域。 在一些实施方案中，施加两亲表面改性剂修饰低k电介质区域与随后工艺的相互作用。