公开(公告)号：US06767806B2

公开(公告)日：2004-07-27

申请号：US10243386

申请日：2002-09-13

申请人： Cem Basceri ,  Garo J. Derderian ,  Mark R. Visokay ,  John M. Drynan ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Garo J. Derderian ,  Mark R. Visokay ,  John M. Drynan ,  Gurtej S. Sandhu

IPC分类号： H01L2120

CPC分类号： H01L21/31122 ,  H01L21/28061 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/31604 ,  H01L21/32051 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/90 ,  H01L29/6659

摘要： In part, disclosed are semiconductor processing methods, methods of depositing a tungsten comprising layer over a substrate, methods of depositing a tungsten nitride comprising layer over a substrate, methods of depositing a tungsten silicide comprising layer over a substrate, methods of forming a transistor gate line over a substrate, methods of forming a patterned substantially crystalline Ta2O5 comprising material, and methods of forming a capacitor dielectric region comprising substantially crystalline Ta2O5 comprising material. In one implementation, a semiconductor processing method includes forming a substantially amorphous Ta2O5 comprising layer over a semiconductive substrate. The layer is exposed to WF6 under conditions effective to etch substantially amorphous Ta2O5 from the substrate. In one implementation, the layer is exposed to WF6 under conditions effective to both etch substantially amorphous Ta2O5 from the substrate and deposit a tungsten comprising layer over the substrate during the exposing.

摘要翻译： 部分地，公开了半导体处理方法，在衬底上沉积含钨层的方法，在衬底上沉积含氮化钨的层的方法，在衬底上沉积包含硅化钨的层的方法，形成晶体管栅极的方法 在衬底上划线，形成图案化的基本上结晶的Ta 2 O 5的材料的方法，以及形成包含基本上结晶的Ta 2 O 5的材料的电容器电介质区域的方法。 在一个实施方案中，半导体处理方法包括在半导体衬底上形成包含基本非晶态的Ta 2 O 5层。 该层在有效从底物上蚀刻基本无定形Ta 2 O 5的条件下暴露于WF6。 在一个实施方案中，该层在有效地从衬底上蚀刻基本上无定形Ta 2 O 5的条件下暴露于WF6，并在曝光期间在衬底上沉积含钨层。

公开(公告)号：US06753271B2

公开(公告)日：2004-06-22

申请号：US10222282

申请日：2002-08-15

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： H01L2144

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间组合物单层，随后是与中间体组合物反应所需的沉积组合物，统称为将多种不同的组合物沉积前体流到沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。

公开(公告)号：US06673701B1

公开(公告)日：2004-01-06

申请号：US10229887

申请日：2002-08-27

申请人： Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： C30B2502

CPC分类号： C30B25/14 ,  C23C16/45527 ,  C30B25/02

摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. The first precursor gas flowing comprises a plurality of first precursor gas pulses. The plurality of first precursor gas pulses comprises at least one total period of time between two immediately adjacent first precursor gas pulses when no gas is fed to the chamber. After forming the first monolayer on the substrate, a second precursor gas different in composition from the first is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 第一前体气体流动包括多个第一前体气体脉冲。 多个第一前体气体脉冲包括当没有气体被供给到腔室时在两个紧邻的第一前体气体脉冲之间的至少一个总时间段。 在衬底上形成第一单层之后，组成不同于第一衬底的第二前体气体流入沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。

公开(公告)号：US07794787B2

公开(公告)日：2010-09-14

申请号：US12436936

申请日：2009-05-07

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

IPC分类号： C23C16/00 ,  C23C16/06

CPC分类号： C23C16/45525 ,  C23C16/40 ,  C23C16/448 ,  Y10S427/101

摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

摘要翻译： 本发明包括利用超临界流体将前体引入反应室的方法。 在一些方面，使用超临界流体在ALD期间将至少一种前体引入室中，并且在特定方面，超临界流体用于在ALD期间将多种前体引入反应室。 本发明可用于形成任何各种材料，包括含金属的材料，例如金属氧化物，金属氮化物和由金属组成的材料。 可以通过利用超临界流体来形成金属氧化物，以将含金属的前体引入反应室，然后前体在基材的表面上形成含金属的层。 随后，含金属层可以与氧反应以将该层内的至少一些金属转化为金属氧化物。

公开(公告)号：US07128787B2

公开(公告)日：2006-10-31

申请号：US10956925

申请日：2004-09-30

申请人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： C30B25/14 ,  C30B25/16

CPC分类号： C30B25/14 ,  C23C14/0641 ,  C23C14/081 ,  C23C16/34 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45531

摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer, a reactive intermediate gas is flowed to the substrate within the deposition chamber. The reactive intermediate gas is capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing. After flowing the reactive intermediate gas, a second precursor gas is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 在形成第一单层之后，反应性中间气体流到沉积室内的衬底。 反应性中间体气体能够与在反应性中间体气体流动的条件下流动的第一前体的中间反应副产物反应。 在流动反应性中间气体之后，第二前体气体流到沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。

公开(公告)号：US07048968B2

公开(公告)日：2006-05-23

申请号：US10652224

申请日：2003-08-22

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

IPC分类号： C23C16/40 ,  C23C16/455

CPC分类号： C23C16/45525 ,  C23C16/40 ,  C23C16/448 ,  Y10S427/101

摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid to introduce a metal-containing precursor into a reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

摘要翻译： 本发明包括利用超临界流体将前体引入反应室的方法。 在一些方面，使用超临界流体在ALD期间将至少一种前体引入室中，并且在特定方面，超临界流体用于在ALD期间将多种前体引入反应室。 本发明可用于形成任何各种材料，包括含金属的材料，例如金属氧化物，金属氮化物和由金属组成的材料。 可以通过利用超临界流体将含金属的前体引入反应室来形成金属氧化物，然后前体在衬底的表面上形成含金属的层。 随后，含金属层可以与氧反应以将该层内的至少一些金属转化为金属氧化物。

公开(公告)号：US06969677B2

公开(公告)日：2005-11-29

申请号：US10690029

申请日：2003-10-20

申请人： Garo J. Derderian ,  Cem Basceri

发明人： Garo J. Derderian ,  Cem Basceri

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/42 ,  C23C16/56 ,  H01L21/20 ,  H01L21/285 ,  H01L21/44 ,  H01L21/768

CPC分类号： C23C16/0227 ,  C23C16/0254 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855

摘要： The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising an exposed elemental silicon containing surface. At least one of a crystalline form TiN, WN, elemental form W, or SiC comprising layer is deposited onto the exposed elemental silicon containing surface to a thickness no greater than 50 Angstroms. Such layer is exposed to plasma and a conductive reaction layer including at least one of an elemental metal or metal rich silicide is deposited onto the plasma exposed layer. At least one of metal of the conductive reaction layer or elemental silicon of the substrate is diffused along columnar grain boundaries of the crystalline form layer effective to cause a reaction of metal of the conductive reaction layer with elemental silicon of the substrate to form a conductive metal silicide comprising contact region electrically connecting the conductive reaction layer with the substrate. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括通过金属与硅的反应形成导电金属硅化物的方法。 在一个实施方案中，这种方法包括提供包括暴露的含元素硅的表面的半导体衬底。 将结晶形态TiN，WN，元素形式W或包含SiC的层中的至少一种沉积到暴露的含元素硅表面上至不大于50埃的厚度。 这种层暴露于等离子体，并且包含元素金属或富金属硅化物中的至少一种的导电反应层沉积到等离子体暴露层上。 基板的导电性反应层或元素硅的金属中的至少一种沿结晶层的柱状晶界扩散，有效地导致导电性反应层的金属与基板的元素硅反应形成导电性金属 硅化物，其包括将导电反应层与基底电连接的接触区域。 考虑了其他方面和实现。

公开(公告)号：US20090215252A1

公开(公告)日：2009-08-27

申请号：US12436936

申请日：2009-05-07

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

IPC分类号： H01L21/46

CPC分类号： C23C16/45525 ,  C23C16/40 ,  C23C16/448 ,  Y10S427/101

摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

摘要翻译： 本发明包括利用超临界流体将前体引入反应室的方法。 在一些方面，使用超临界流体在ALD期间将至少一种前体引入室中，并且在特定方面，超临界流体用于在ALD期间将多种前体引入反应室。 本发明可用于形成任何各种材料，包括含金属的材料，例如金属氧化物，金属氮化物和由金属组成的材料。 可以通过利用超临界流体来形成金属氧化物，以将含金属的前体引入反应室，然后前体在基材的表面上形成含金属的层。 随后，含金属层可以与氧反应以将该层内的至少一些金属转化为金属氧化物。

公开(公告)号：US07544388B2

公开(公告)日：2009-06-09

申请号：US11404611

申请日：2006-04-13

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

IPC分类号： C23C16/00 ,  C23C16/06

CPC分类号： C23C16/45525 ,  C23C16/40 ,  C23C16/448 ,  Y10S427/101

摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

摘要翻译： 本发明包括利用超临界流体将前体引入反应室的方法。 在一些方面，使用超临界流体在ALD期间将至少一种前体引入室中，并且在特定方面，超临界流体用于在ALD期间将多种前体引入反应室。 本发明可用于形成任何各种材料，包括含金属的材料，例如金属氧化物，金属氮化物和由金属组成的材料。 可以通过利用超临界流体来形成金属氧化物，以将含金属的前体引入反应室，然后前体在基材的表面上形成含金属的层。 随后，含金属层可以与氧反应以将该层内的至少一些金属转化为金属氧化物。

公开(公告)号：US07368381B2

公开(公告)日：2008-05-06

申请号：US11413431

申请日：2006-04-28

申请人： Demetrius Sarigiannis ,  Garo J Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo J Derderian ,  Cem Basceri

IPC分类号： H01L21/44

CPC分类号： C23C18/1283 ,  C23C18/1208 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/125 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/283 ,  H01L21/28556 ,  H01L21/31 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/318

摘要： The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.

摘要翻译： 本发明包括在基底上形成膜的方法。 在反应室内设置基板，并且还在室内设置混合物。 该混合物包括在超临界流体内的所需材料的前体。 前体在一组条件下是相对反应的，并且在另一组条件下相对不反应。 初始和超临界流体混合物最初在前体相对不反应的条件下在室中提供。 随后，在保持超临界流体的超临界状态的同时，将反应室内的条件变更为前体相对反应的条件。 前体反应形成所需的材料，并且所需材料中的至少一些在基材上形成膜。