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公开(公告)号：US20220037849A1
公开(公告)日：2022-02-03
申请号：US17414070
申请日：2019-12-11
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Akio ITO , Yoshitaka KUROSAKA , Masahiro HITAKA , Kazuyoshi HIROSE , Tadataka EDAMURA
IPC: H01S5/026 , H01S5/042 , H01S5/343 , H01S5/0236 , G06F30/10
Abstract: The light-emitting element of an embodiment outputs a clear optical image while suppressing light output efficiency reduction, and includes a substrate, a light-emitting unit, and a bonding layer. The light-emitting unit has a semiconductor stack, including a phase modulation layer, between first and second electrodes. The phase modulation layer has a base layer and modified refractive index regions, and includes a first region having a size including the second electrode, and a second region. Each gravity center of the second region's modified refractive index region is arranged by an array condition. The light from the stack is a single beam, and regarding a first distance from the substrate to the stack's front surface and a second distance from the substrate to the stack's back surface, a variation amount of the first distance along a direction on the substrate is smaller than a variation amount of the second distance.
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公开(公告)号：US20190074664A1
公开(公告)日：2019-03-07
申请号：US16121825
申请日：2018-09-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Akio ITO , Kazuue FUJITA , Daisuke KAWAGUCHI , Tatsuo DOUGAKIUCHI , Tadataka EDAMURA
CPC classification number: H01S5/3402 , H01S5/0201 , H01S5/021 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/028 , H01S5/0604 , H01S5/1096 , H01S5/12 , H01S5/22 , H01S5/2224 , H01S5/2275 , H01S2301/176 , H01S2302/02
Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).
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公开(公告)号：US20170243994A1
公开(公告)日：2017-08-24
申请号：US15423836
申请日：2017-02-03
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tatsuo DOUGAKIUCHI , Akio ITO , Tadataka EDAMURA , Kazuue FUJITA
IPC: H01L31/0352 , H01L31/0304 , H01L31/109 , H01L31/0216 , G01N21/3504 , H01L31/0232
CPC classification number: H01L31/035236 , G01N21/3504 , G01N2201/068 , G01N2201/0873 , H01L31/02161 , H01L31/02327 , H01L31/03042 , H01L31/03046 , H01L31/035281 , H01L31/109
Abstract: A quantum cascade detector includes a semiconductor substrate; an active layer having a cascade structure; a lower cladding layer provided between the active layer and the substrate and having a lower refractive index than the active layer; a lower metal layer provided between the lower cladding layer and the substrate; an upper cladding layer provided on an opposite side to the substrate with respect to the active layer and having a lower refractive index than the active layer; and an upper metal layer provided on an opposite side to the active layer with respect to the upper cladding layer. A first end face being in a waveguide direction in a waveguide structure with the active layer, lower cladding layer, and upper cladding layer is an entrance surface for light to be detected.
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公开(公告)号：US20220209505A1
公开(公告)日：2022-06-30
申请号：US17608225
申请日：2020-12-16
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazuue FUJITA , Shohei HAYASHI , Hiroyasu FUJIWARA , Atsushi NAKANISHI , Akio ITO , Tatsuo DOUGAKIUCHI
Abstract: A laser module including a quantum cascade laser that includes a substrate having a main surface, a first clad layer provided on the main surface, an active layer provided on the first clad layer, and a second clad layer provided on the active layer, and a lens that has a lens plane disposed at a position facing the end surface of the active layer. An end surface of the active layer constitutes a resonator that causes light of a first frequency and light of a second frequency to oscillate, and the active layer is configured to generate a terahertz wave of a differential frequency between the first frequency and the second frequency. The substrate is in direct contact or indirect contact with the lens plane, and the end surface of the active layer is inclined with respect to a portion facing the end surface in the lens plane.
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Patent Agency Ranking
公开(公告)号：US20170063044A1
公开(公告)日：2017-03-02
申请号：US15251119
申请日：2016-08-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tatsuo DOUGAKIUCHI , Kazuue FUJITA , Akio ITO , Tadataka EDAMURA
CPC classification number: H01S5/3402 , H01S5/0267 , H01S5/0604 , H01S5/1028 , H01S5/1096 , H01S5/1221 , H01S5/124 , H01S5/141 , H01S5/18 , H01S5/2018 , H01S2302/02
Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2, and to generate output light of a difference frequency ω by difference frequency generation. An external diffraction grating is provided constituting an external cavity for generating the first pump light and configured to be capable of changing the frequency ω1, outside an element structure portion including the active layer. Grooves respectively formed in a direction intersecting with a resonating direction are provided on a second surface of the substrate.
Abstract translation: 量子级联激光器被配置为具有半导体衬底和设置在衬底的第一表面上的有源层，并且具有包括发射层和注入层的单元层叠结构的多级叠层。 有源层被配置为能够产生频率ω1的第一泵浦光和频率ω2的第二泵浦光，并且通过差频产生产生差频ω的输出光。 提供外部衍射光栅，其构成用于产生第一泵浦光的外部空腔，并且被配置为能够在包括有源层的元件结构部分外部改变频率ω1。 分别在与谐振方向相交的方向上形成的槽设置在基板的第二表面上。
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16.发明申请公开(公告)号：US20240413604A1
公开(公告)日：2024-12-12
申请号：US18811057
申请日：2024-08-21
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Akio ITO , Tadataka EDAMURA
Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.
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公开(公告)号：US20230317867A1
公开(公告)日：2023-10-05
申请号：US18023435
申请日：2021-05-26
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tatsuo DOUGAKIUCHI , Akio ITO , Masahiro HITAKA , Tadataka EDAMURA
IPC: H01L31/0352 , H01L23/482 , H01L31/02 , H01L31/0232 , H01L31/0304 , G01J3/10 , G01J3/45 , G01J3/457
CPC classification number: H01L31/035236 , H01L23/4821 , H01L31/02005 , H01L31/02325 , H01L31/035281 , H01L31/03046 , G01J3/10 , G01J3/45 , G01J3/457 , G01J2003/102
Abstract: A photodetection module includes a photodetector and a fixing member. The photodetector includes a semiconductor substrate, a mesa portion, a first contact layer, a second contact layer, and a first electrode formed in a planar shape on a major surface of the semiconductor substrate, and electrically connected to one of the first contact layer and the second contact layer. The fixing member includes an insulating substrate, and a first wiring formed in a planar shape on a major surface of the insulating substrate. A recessed portion is formed in the major surface of the insulating substrate, and at least a part of the mesa portion is disposed inside the recessed portion. The first electrode is electrically connected to the first wiring in a state where the first electrode is in surface contact with the first wiring.
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公开(公告)号：US20230030197A1
公开(公告)日：2023-02-02
申请号：US17888623
申请日：2022-08-16
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tatsuo DOUGAKIUCHI , Akio ITO , Masahiro HITAKA , Tadataka EDAMURA , Naota AKIKUSA
Abstract: A beating spectroscopy device includes: first and second quantum cascade lasers; a quantum cascade detector; and a sample holder configured to hold a sample on an optical path between the second quantum cascade laser and the quantum cascade detector. Lights from the first and second quantum cascade lasers are detected by the quantum cascade detector while a wavelength of the light from the second quantum cascade laser is changed to scan a frequency of a beating signal having a frequency in accordance with a wavelength difference between the lights from the first and second quantum cascade lasers.
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19.发明申请公开(公告)号：US20190326466A1
公开(公告)日：2019-10-24
申请号：US16386604
申请日：2019-04-17
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Masahiro HITAKA , Akio ITO , Tatsuo DOUGAKIUCHI , Kazuue FUJITA , Tadataka EDAMURA
IPC: H01L31/173 , H01S5/34 , H01L31/0352 , H01L31/0224 , H01S5/02 , H01S5/22 , H01S5/026 , H01S5/042 , H01S5/343 , H01L31/0304 , H01L31/18 , G01N21/25
Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.
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