公开(公告)号：US20110290183A1

公开(公告)日：2011-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US07884035B2

公开(公告)日：2011-02-08

申请号：US12082554

申请日：2008-04-11

申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765

摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.

摘要翻译： 我们已经发现，将H2添加到包括SiH 4，NH 3和N 2的前体气体组合物中是有效的，以提高沉积在衬底上的a-SiNx：H膜的衬底表面上的湿蚀刻速率和湿蚀刻速率均匀性， PECVD。 湿蚀刻速率是膜密度的指示。 通常，湿蚀刻速率越低，膜越致密。 向SiH 4 / NH 3 / N 2前体气体组合物中加入H 2没有显着增加穿过基材表面的沉积膜厚度的变化。 跨过基板的膜的均匀性使得能够生产具有25,000cm 2和更大的表面积的平板显示器。

公开(公告)号：US20090261331A1

公开(公告)日：2009-10-22

申请号：US12425228

申请日：2009-04-16

申请人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

发明人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

IPC分类号： H01L29/786 ,  H01L21/20

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.

摘要翻译： 提供一种用于形成薄膜晶体管的方法和装置。 形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。 在一些实施例中，第一介电层是富硅的氮化硅层。 形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。 本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

公开(公告)号：US20080305246A1

公开(公告)日：2008-12-11

申请号：US11759542

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

IPC分类号： C23C16/00 ,  B05D5/12

CPC分类号： C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

摘要翻译： 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

公开(公告)号：US07125758B2

公开(公告)日：2006-10-24

申请号：US10829016

申请日：2004-04-20

申请人： Soo Young Choi ,  Tae Kyung Won ,  Gaku Furuta ,  Qunhua Wang ,  John M. White ,  Beom Soo Park

发明人： Soo Young Choi ,  Tae Kyung Won ,  Gaku Furuta ,  Qunhua Wang ,  John M. White ,  Beom Soo Park

IPC分类号： H01L21/471

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669

摘要： We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.

摘要翻译： 我们已经开发了一种PECVD沉积a-SiN＆lt; x＆gt;：H膜的方法，其可用于TFT器件作为栅极电介质和钝化层，当一系列TFT​​器件排列在具有表面的衬底上时 大于约1m 2的区域，其可以在约4.1m 2范围内，甚至大至9m 2/2。 a-SiN＆lt; x＆gt;：H膜提供了膜厚度的均匀性和膜特性的均匀性，包括在这种大的基材表面区域上必需的化学成分。 通过该方法生产的膜对于液晶有源矩阵显示器和有机发光二极管控制是有用的。

公开(公告)号：US08076222B2

公开(公告)日：2011-12-13

申请号：US12204563

申请日：2008-09-04

申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

IPC分类号： H01L21/36

CPC分类号： H01L21/0262 ,  C23C16/26 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a first gas mixture having a hydrogen containing gas to a silicon containing gas flow rate ratio greater than about 200:1 into the processing chamber, maintaining a first process pressure greater than about 6 Torr in the processing chamber to deposit a first microcrystalline silicon containing layer in presence of a plasma formed from the first gas mixture, supplying a second gas mixture into the processing chamber, and maintaining a second process pressure less than about 5 Torr in the processing chamber to deposit a second microcrystalline silicon containing layer in presence of a plasma formed from the second gas mixture.

摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，形成微晶硅层的方法包括在处理室中提供衬底，将具有含氢气体的第一气体混合物供给到大于约200:1的含硅气体流速比进入处理室， 在处理室中保持大于约6托的第一工艺压力，以在由第一气体混合物形成的等离子体存在下沉积第一微晶硅含量层，将第二气体混合物供应到处理室中，并保持第二工艺压力 在处理室中小于约5托，以在由第二气体混合物形成的等离子体存在下沉积第二微晶硅含量层。

公开(公告)号：US20080268175A1

公开(公告)日：2008-10-30

申请号：US12082554

申请日：2008-04-11

申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： C23C16/448

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765

摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.

摘要翻译： 我们已经发现，向包含SiH 4 N，NH 3和N 2的前体气体组合物中加入H 2 N 2， 在通过PECVD沉积在衬底上的a-SiN x H：H膜的衬底表面上改善湿蚀刻速率和湿蚀刻速率均匀性是有效的。 湿蚀刻速率是膜密度的指示。 通常，湿蚀刻速率越低，膜越致密。 向SiH 4 N 3 / NH 3 / N 2 N前体气体组合物中加入H 2 O没有显着增加 衬底表面沉积膜厚度的变化。 跨过衬底的膜的均匀性使得能够生产具有25,000cm 2以上的表面积的平板显示器。

公开(公告)号：US20080302303A1

公开(公告)日：2008-12-11

申请号：US11759599

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： C23C16/00 ,  B05B1/14

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32449

摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.

摘要翻译： 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

公开(公告)号：US08114484B2

公开(公告)日：2012-02-14

申请号：US11833983

申请日：2007-08-04

申请人： Ya-Tang Yang ,  Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  John M. White

发明人： Ya-Tang Yang ,  Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  John M. White

IPC分类号： H01H1/24 ,  C23C16/00

CPC分类号： H01J37/32357 ,  C23C16/24 ,  C23C16/345 ,  C23C16/5096 ,  H01J37/32091

摘要： Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber.

摘要翻译： 提供了使用低温等离子体增强化学气相沉积（PECVD）工艺形成适用于晶体管制造的膜堆叠的方法。 在一个实施例中，该方法包括在PECVD室中提供衬底，在衬底上沉积双层SiNx膜，在SiNx膜上沉积双层非晶硅膜，以及在双层非晶体上沉积n掺杂硅膜 硅膜。 上述膜在相同的PECVD室中以低于约300摄氏度的温度沉积。

公开(公告)号：US07754294B2

公开(公告)日：2010-07-13

申请号：US12215602

申请日：2008-06-25

申请人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H05H1/24

CPC分类号： H01L21/3185

摘要： We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave effects. By minimizing surface standing wave effects, the uniformity of film properties (particularly film thickness) across a substrate surface onto which the films have been deposited is improved.

摘要翻译： 我们已经发现，在沉积含硅薄膜期间控制PECVD沉积工艺参数的组合提供了改进的对表面驻波效应的控制。 通过最小化表面驻波效应，改善了其上沉积有薄膜的基板表面上的膜性质（特别是膜厚度）的均匀性。