公开(公告)号：US07833885B2

公开(公告)日：2010-11-16

申请号：US12323872

申请日：2008-11-26

申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

IPC分类号： H01L21/00

CPC分类号： H01L29/04 ,  C23C16/26 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/7866

摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.

摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有 氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在 约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

公开(公告)号：US20090200552A1

公开(公告)日：2009-08-13

申请号：US12323872

申请日：2008-11-26

申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

IPC分类号： H01L29/04 ,  H01L21/20 ,  H01L21/00

CPC分类号： H01L29/04 ,  C23C16/26 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/7866

摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.

摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有 氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在 约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

公开(公告)号：US08076222B2

公开(公告)日：2011-12-13

申请号：US12204563

申请日：2008-09-04

申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

IPC分类号： H01L21/36

CPC分类号： H01L21/0262 ,  C23C16/26 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a first gas mixture having a hydrogen containing gas to a silicon containing gas flow rate ratio greater than about 200:1 into the processing chamber, maintaining a first process pressure greater than about 6 Torr in the processing chamber to deposit a first microcrystalline silicon containing layer in presence of a plasma formed from the first gas mixture, supplying a second gas mixture into the processing chamber, and maintaining a second process pressure less than about 5 Torr in the processing chamber to deposit a second microcrystalline silicon containing layer in presence of a plasma formed from the second gas mixture.

摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，形成微晶硅层的方法包括在处理室中提供衬底，将具有含氢气体的第一气体混合物供给到大于约200:1的含硅气体流速比进入处理室， 在处理室中保持大于约6托的第一工艺压力，以在由第一气体混合物形成的等离子体存在下沉积第一微晶硅含量层，将第二气体混合物供应到处理室中，并保持第二工艺压力 在处理室中小于约5托，以在由第二气体混合物形成的等离子体存在下沉积第二微晶硅含量层。

公开(公告)号：US07955890B2

公开(公告)日：2011-06-07

申请号：US12486435

申请日：2009-06-17

申请人： Soo Young Choi ,  Jriyan Jerry Chen ,  Tae Kyung Won ,  Dong-Kil Yim

发明人： Soo Young Choi ,  Jriyan Jerry Chen ,  Tae Kyung Won ,  Dong-Kil Yim

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  G02F1/1362 ,  G02F2001/13312 ,  G02F2201/58 ,  G06F3/0412 ,  G06F3/0421 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L27/1214 ,  H01L27/1446 ,  H01L31/022466 ,  H01L31/03762 ,  H01L31/153 ,  H01L31/202 ,  Y02E10/548

摘要： Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.

摘要翻译： 本发明的实施例涉及用于沉积非晶膜的方法，所述方法适用于显示器应用中的NIP光电二极管。 在一个实施例中，该方法包括将衬底提供到沉积室中，将具有氢气的硅烷气体比例大于4的硅烷气体的气体混合物供应到沉积室中，将气体混合物的压力保持在大于约1托 在所述沉积室中，并且在所述气体混合物的存在下在所述衬底上形成非晶硅膜，其中所述非晶硅膜被配置为光电二极管传感器中的本征型层。

公开(公告)号：US20090315030A1

公开(公告)日：2009-12-24

申请号：US12486435

申请日：2009-06-17

申请人： Soo Young Choi ,  Jriyan Jerry Chen ,  Tae Kyung Won ,  Dong-Kil Yim

发明人： Soo Young Choi ,  Jriyan Jerry Chen ,  Tae Kyung Won ,  Dong-Kil Yim

IPC分类号： H01L31/0376 ,  H01L21/20 ,  H01L31/18

CPC分类号： H01L21/02532 ,  G02F1/1362 ,  G02F2001/13312 ,  G02F2201/58 ,  G06F3/0412 ,  G06F3/0421 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L27/1214 ,  H01L27/1446 ,  H01L31/022466 ,  H01L31/03762 ,  H01L31/153 ,  H01L31/202 ,  Y02E10/548

摘要： Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.

摘要翻译： 本发明的实施例涉及用于沉积非晶膜的方法，所述方法适用于显示器应用中的NIP光电二极管。 在一个实施例中，该方法包括将衬底提供到沉积室中，将具有氢气的硅烷气体比例大于4的硅烷气体的气体混合物供应到沉积室中，将气体混合物的压力保持在大于约1托 在所述沉积室中，并且在所述气体混合物的存在下在所述衬底上形成非晶硅膜，其中所述非晶硅膜被配置为光电二极管传感器中的本征型层。

公开(公告)号：US08906813B2

公开(公告)日：2014-12-09

申请号：US13886175

申请日：2013-05-02

申请人： Tae Kyung Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Dong-Kil Yim ,  John M. White ,  Jozef Kudela

发明人： Tae Kyung Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Dong-Kil Yim ,  John M. White ,  Jozef Kudela

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/511 ,  C23C16/54

CPC分类号： H01L21/0262 ,  C23C16/401 ,  C23C16/45578 ,  C23C16/511 ,  C23C16/545 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274

摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

摘要翻译： 本文描述了用于处理衬底的方法。 方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率 以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

公开(公告)号：US20090200551A1

公开(公告)日：2009-08-13

申请号：US12204563

申请日：2008-09-04

申请人： Tae Kyung Won ,  Soo Young Chol ,  Dong-Kil Yim ,  Jriyan Jerry Chen

发明人： Tae Kyung Won ,  Soo Young Chol ,  Dong-Kil Yim ,  Jriyan Jerry Chen

IPC分类号： H01L29/04 ,  H01L21/205

CPC分类号： H01L21/0262 ,  C23C16/26 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a first gas mixture having a hydrogen containing gas to a silicon containing gas flow rate ratio greater than about 200:1 into the processing chamber, maintaining a first process pressure greater than about 6 Torr in the processing chamber to deposit a first microcrystalline silicon containing layer in presence of a plasma formed from the first gas mixture, supplying a second gas mixture into the processing chamber, and maintaining a second process pressure less than about 5 Torr in the processing chamber to deposit a second microcrystalline silicon containing layer in presence of a plasma formed from the second gas mixture.

摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，形成微晶硅层的方法包括在处理室中提供衬底，将具有含氢气体的第一气体混合物供给到大于约200:1的含硅气体流速比进入处理室， 在处理室中保持大于约6托的第一工艺压力，以在由第一气体混合物形成的等离子体存在下沉积第一微晶硅含量层，将第二气体混合物供应到处理室中，并保持第二工艺压力 在处理室中小于约5托，以在由第二气体混合物形成的等离子体存在下沉积第二微晶硅含量层。

公开(公告)号：US08083853B2

公开(公告)日：2011-12-27

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20110095402A1

公开(公告)日：2011-04-28

申请号：US12930230

申请日：2010-12-30

申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H01L29/51

CPC分类号： E06C7/48 ,  E06C7/482 ,  E06C7/484

摘要： An α-SiNx:H gate dielectric film deposited over a substrate surface having a surface area larger than 100 cm×100 cm, wherein said α-SiNx:H gate dielectric film exhibits a film thickness which varies by less than about 20% over said surface area, a film density which varies by less than about 17% over said surface area, and wherein said film exhibits a Si—H bonded structure content of less than about 15 atomic % over said surface area.

摘要翻译： 一种沉积在表面积大于100cm×100cm的衬底表面上的α-SiNx：H栅极电介质膜，其中所述α-SiNx：H栅极电介质膜的膜厚比所述 表面积，比所述表面积变化小于约17％的膜密度，并且其中所述膜在所述表面积上表现出小于约15原子％的Si-H键合结构含量。

公开(公告)号：US08142606B2

公开(公告)日：2012-03-27

申请号：US11759542

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

摘要翻译： 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。