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    Microcrystalline silicon thin film transistor
    1.
    发明授权
    Microcrystalline silicon thin film transistor 失效
    微晶硅薄膜晶体管

    公开(公告)号：US07833885B2

    公开(公告)日：2010-11-16

    申请号：US12323872

    申请日：2008-11-26

    申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    IPC分类号： H01L21/00

    CPC分类号： H01L29/04 ,  C23C16/26 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/7866

    摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.

    摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有 氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在 约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

    MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR
    2.
    发明申请
    MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR 失效
    微晶硅薄膜晶体管

    公开(公告)号：US20090200552A1

    公开(公告)日：2009-08-13

    申请号：US12323872

    申请日：2008-11-26

    申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    IPC分类号： H01L29/04 ,  H01L21/20 ,  H01L21/00

    CPC分类号： H01L29/04 ,  C23C16/26 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/7866

    摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.

    摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有 氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在 约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

    Microcrystalline silicon thin film transistor
    3.
    发明授权
    Microcrystalline silicon thin film transistor 有权
    微晶硅薄膜晶体管

    公开(公告)号：US08076222B2

    公开(公告)日：2011-12-13

    申请号：US12204563

    申请日：2008-09-04

    申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    IPC分类号： H01L21/36

    CPC分类号： H01L21/0262 ,  C23C16/26 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

    摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a first gas mixture having a hydrogen containing gas to a silicon containing gas flow rate ratio greater than about 200:1 into the processing chamber, maintaining a first process pressure greater than about 6 Torr in the processing chamber to deposit a first microcrystalline silicon containing layer in presence of a plasma formed from the first gas mixture, supplying a second gas mixture into the processing chamber, and maintaining a second process pressure less than about 5 Torr in the processing chamber to deposit a second microcrystalline silicon containing layer in presence of a plasma formed from the second gas mixture.

    摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，形成微晶硅层的方法包括在处理室中提供衬底，将具有含氢气体的第一气体混合物供给到大于约200:1的含硅气体流速比进入处理室， 在处理室中保持大于约6托的第一工艺压力，以在由第一气体混合物形成的等离子体存在下沉积第一微晶硅含量层，将第二气体混合物供应到处理室中，并保持第二工艺压力 在处理室中小于约5托，以在由第二气体混合物形成的等离子体存在下沉积第二微晶硅含量层。

    Power loading substrates to reduce particle contamination
    7.
    发明申请
    Power loading substrates to reduce particle contamination 有权
    功率负载基板以减少颗粒污染

    公开(公告)号：US20080003358A1

    公开(公告)日：2008-01-03

    申请号：US11478279

    申请日：2006-06-29

    申请人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Beom Soo Park ,  Jin Man Ha

    发明人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Beom Soo Park ,  Jin Man Ha

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： C23C16/4401 ,  C23C14/02 ,  C23C14/564 ,  C23C16/0209 ,  H01J2237/2001

    摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.

    摘要翻译： 公开了一种防止处理室内的颗粒污染的方法。 预处理室内的衬底可能引起热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。 增加衬底温度的一种方法是等离子体加载衬底。 等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。 提高衬底温度的另一种方法是加载衬底的高压。 高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。 通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

    Reducing electrostatic charge by roughening the susceptor
    8.
    发明授权
    Reducing electrostatic charge by roughening the susceptor 有权
    通过粗化基座来减少静电电荷

    公开(公告)号：US08372205B2

    公开(公告)日：2013-02-12

    申请号：US11182168

    申请日：2005-07-15

    申请人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park

    发明人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park

    IPC分类号： H01L21/306 ,  C23C16/00 ,  C23F1/00

    CPC分类号： C23C16/4581 ,  B24C1/06 ,  B24C1/10 ,  B24C3/322 ,  C23C16/4404 ,  C23C16/545 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32715 ,  H01L21/68757

    摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.

    摘要翻译： 提供了一种基板支撑件及其制造方法。 在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。 以基板支撑表面为中心的涂层的至少一部分具有介于约200至约2000微英寸之间的表面光洁度。 在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于在其上支撑约200至约2000微英寸的衬底。 在一个实施例中，衬底支撑组件包括具有衬底支撑表面的导电体，适于支撑导电体的衬底支撑结构，并且导电体被电绝缘涂层覆盖。

    Power loading substrates to reduce particle contamination
    9.
    发明授权
    Power loading substrates to reduce particle contamination 有权
    功率负载基板以减少颗粒污染

    公开(公告)号：US08075952B2

    公开(公告)日：2011-12-13

    申请号：US11478279

    申请日：2006-06-29

    申请人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

    发明人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： C23C16/4401 ,  C23C14/02 ,  C23C14/564 ,  C23C16/0209 ,  H01J2237/2001

    摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.

    摘要翻译： 公开了一种防止处理室内的颗粒污染的方法。 预处理室内的衬底可能导致热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。 增加衬底温度的一种方法是等离子体加载衬底。 等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。 提高衬底温度的另一种方法是加载衬底的高压。 高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。 通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

    Power loading substrates to reduce particle contamination
    10.
    发明授权
    Power loading substrates to reduce particle contamination 有权
    功率负载基板以减少颗粒污染

    公开(公告)号：US08361549B2

    公开(公告)日：2013-01-29

    申请号：US13315366

    申请日：2011-12-09

    申请人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

    发明人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： C23C16/4401 ,  C23C14/02 ,  C23C14/564 ,  C23C16/0209 ,  H01J2237/2001

    摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.

    摘要翻译： 公开了一种防止处理室内的颗粒污染的方法。 预处理室内的衬底可能引起热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。 增加衬底温度的一种方法是等离子体加载衬底。 等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。 提高衬底温度的另一种方法是加载衬底的高压。 高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。 通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。