公开(公告)号：US5522412A

公开(公告)日：1996-06-04

申请号：US289117

申请日：1994-08-11

申请人： Takayuki Ohba ,  Toshiya Suzuki ,  Seishi Murakami

发明人： Takayuki Ohba ,  Toshiya Suzuki ,  Seishi Murakami

IPC分类号： H01L21/205 ,  C23C16/44 ,  H01L21/00 ,  H01L21/285 ,  H01L21/304 ,  H01L21/31 ,  B08B3/02

CPC分类号： H01L21/67167 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/6719 ,  Y10S134/902

摘要： When an object of treatment is subjected to, for example, a gas treatment in an airtight chamber, reaction products adhere to the inner wall surface of the chamber, an object holder therein, and the corner portions of the chamber. When a cleaning medium is injected into the chamber, according to the present invention, the reaction products are dissolved in the cleaning medium by hydrolysis. Thereafter, the cleaning medium is discharged from the chamber. Then, the chamber is heated and evacuated, so that water vapor is discharged to provide a predetermined degree of vacuum, whereupon the treatment can be started anew. Therefore, a wiping operation can be omitted. Moreover, the reaction products remaining at the corner portions of the chamber can be removed without forming a source of polluted particles, so that the necessity of overhauling can be obviated. Thus, fully automatic cleaning, so to speak, can be effected, and the chamber need not be open to the atmosphere, so that the throughput can be improved.

摘要翻译： 当处理对象例如在气密室中进行气体处理时，反应产物粘附到室的内壁表面，物体保持器和腔室的角部。 当将清洁介质注入室中时，根据本发明，反应产物通过水解溶解在清洁介质中。 此后，清洗介质从室排出。 然后，对该室进行加热抽真空，从而排出水蒸气以提供预定的真空度，从而重新开始处理。 因此，可以省略擦拭操作。 此外，残留在室的角部的反应产物可以被除去而不形成污染颗粒源，从而可以消除大修的必要性。 因此，可以实现全自动清洗，并且室不需要对大气开放，从而可以提高生产量。

公开(公告)号：US4902645A

公开(公告)日：1990-02-20

申请号：US235403

申请日：1988-08-23

申请人： Takayuki Ohba

发明人： Takayuki Ohba

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28562 ,  H01L21/76879 ,  Y10S148/019 ,  Y10S148/147

摘要： A method of selectively forming (growing or depositing) a silicon-containing metal layer on an exposed surface of a semiconductor substrate or a conductor by using a metal halide gas and a silicon hydride gas at a ratio of a flow rate of the latter gas to that of the former gas (e.g., Si.sub.n H.sub.2n+2 /WF.sub.6) of 2 or less, and setting a growth temperature at 200.degree. C. or less. When a Si.sub.3 H.sub.8 gas and a WF.sub.6 gas, in particular, are used at a ratio of the flow rates (Si.sub.3 H.sub.8 /WF.sub.6) of 1.0 or less, and the deposition temperature is set at 100.degree. C. to room temperature, a silicon-containing tungsten layer is selectively deposited (formed).

公开(公告)号：US08415202B2

公开(公告)日：2013-04-09

申请号：US13050050

申请日：2011-03-17

申请人： Takayuki Ohba

发明人： Takayuki Ohba

IPC分类号： H01L21/00

CPC分类号： H01L21/76898 ,  B81B2207/07 ,  B81C1/00238 ,  B81C2201/019 ,  B81C2203/0792 ,  H01L23/481 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/13009 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/83005 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device manufacturing method of stacking semiconductor chips in layers over a semiconductor substrate having, close to its main surface, semiconductor chips, connecting semiconductor chips in different layers to enable signal transmission, and singularizing the layered semiconductor chips into pieces. The method includes steps of forming an insulating layer on the main surface of the semiconductor substrate; stacking the semiconductor chips over the semiconductor chips of the semiconductor substrate in such a manner as to interpose the insulating layer between them and an opposite surface of each disposed semiconductor chip opposes the insulating layer, the opposite surface being opposite to the main surface; forming, in each of the disposed semiconductor chips, a via hole penetrating from the main to the opposite surface; and forming a connection which enables signal transmission between the disposed semiconductor chips and the corresponding semiconductor chips of the semiconductor substrate via the via holes.

摘要翻译： 一种在半导体衬底上层叠半导体芯片的半导体器件制造方法，该半导体衬底具有靠近其主表面的半导体芯片，将不同层中的半导体芯片连接起来以使信号传输，并将分层的半导体芯片单独化成块。 该方法包括在半导体衬底的主表面上形成绝缘层的步骤; 将半导体芯片堆叠在半导体衬底的半导体芯片上，以使绝缘层在它们之间插入，并且每个设置的半导体芯片的相对表面与绝缘层相对，相反表面与主表面相对; 在每个所设置的半导体芯片中形成从主要穿透到相对表面的通孔; 以及形成通过所述通孔使所述半导体芯片与所述半导体基板的对应的半导体芯片之间的信号传输的连接。

公开(公告)号：US07563729B2

公开(公告)日：2009-07-21

申请号：US11135648

申请日：2005-05-24

申请人： Shiqin Xiao ,  Takayuki Ohba

发明人： Shiqin Xiao ,  Takayuki Ohba

IPC分类号： H01L21/469

CPC分类号： H01L21/0228 ,  C23C14/0641 ,  C23C16/308 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31616 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of forming a dielectric film on a substrate surface includes the steps of forming the dielectric film on the substrate surface in plural steps, and reforming, in each of the plural steps of forming the dielectric film, the dielectric film in an ambient primarily of nitrogen.

摘要翻译： 在基板表面上形成电介质膜的方法包括以下步骤：在基板表面上形成多个阶段的电介质膜，并且在形成电介质膜的多个步骤中的每个步骤中，在绝缘膜主要为 氮。

公开(公告)号：US06805138B2

公开(公告)日：2004-10-19

申请号：US10637581

申请日：2003-08-11

申请人： Ade Asneil Akbar ,  Takayuki Ohba

发明人： Ade Asneil Akbar ,  Takayuki Ohba

IPC分类号： H01L600

CPC分类号： H01L21/76838 ,  B08B7/00 ,  B08B7/0057 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/32135 ,  H01L21/67028 ,  H01L21/76807 ,  H01L21/76814 ,  Y10S438/906

摘要： A semiconductor device production method that is used to uniformly and efficiently reduce metal oxides produced on metal (copper, for example) which forms electrodes or wirings on a semiconductor device. An object to be treated on which copper oxides are produced is put into a process chamber and is heated by a heater to a predetermined temperature. Then carboxylic acid stored in a storage tank is vaporized by a carburetor. The vaporized carboxylic acid, together with carrier gas, is introduced into the process chamber via a treating gas feed pipe to reduce the copper oxides produced on the object to be treated to metal copper. As a result, metal oxides can be reduced uniformly without making the surfaces of electrodes or wirings irregular. Moreover, in this case, carbon dioxide and water are both produced in a gaseous state. This prevents impurities from remaining on the surface of copper.

公开(公告)号：US06664179B2

公开(公告)日：2003-12-16

申请号：US10223456

申请日：2002-08-20

申请人： Ade Asneil Akbar ,  Takayuki Ohba

发明人： Ade Asneil Akbar ,  Takayuki Ohba

IPC分类号： H01L214763

CPC分类号： H01L21/76838 ,  B08B7/00 ,  B08B7/0057 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/32135 ,  H01L21/67028 ,  H01L21/76807 ,  H01L21/76814 ,  Y10S438/906

摘要： A semiconductor device production method that is used to uniformly and efficiently reduce metal oxides produced on metal (copper, for example) which forms electrodes or wirings on a semiconductor device. An object to be treated on which copper oxides are produced is put into a process chamber and is heated by a heater to a predetermined temperature. Then carboxylic acid stored in a storage tank is vaporized by a carburetor. The vaporized carboxylic acid, together with carrier gas, is introduced into the process chamber via a treating gas feed pipe to reduce the copper oxides produced on the object to be treated to metal copper. As a result, metal oxides can be reduced uniformly without making the surfaces of electrodes or wirings irregular. Moreover, in this case, carbon dioxide and water are both produced in a gaseous state. This prevents impurities from remaining on the surface of copper.

摘要翻译： 用于均匀有效地还原在金属（例如铜）上生成的在半导体器件上形成电极或布线的金属氧化物的半导体器件制造方法。 将生产铜氧化物的待处理物体放入处理室中，并通过加热器加热至预定温度。 然后储存在储罐中的羧酸由化油器蒸发。 蒸发的羧酸与载气一起通过处理气体进料管引入处理室，以将待处理物体上产生的铜氧化物还原成金属铜。 结果，可以均匀地还原金属氧化物，而不会使电极或配线的表面不规则。 此外，在这种情况下，二氧化碳和水均以气态生成。 这样可以防止杂质残留在铜的表面上。

公开(公告)号：US5393565A

公开(公告)日：1995-02-28

申请号：US72086

申请日：1993-06-07

申请人： Toshiya Suzuki ,  Takayuki Ohba ,  Shimpei Jinnouchi ,  Seishi Murakami

发明人： Toshiya Suzuki ,  Takayuki Ohba ,  Shimpei Jinnouchi ,  Seishi Murakami

IPC分类号： C23C16/34 ,  H01L21/768 ,  C23C16/00

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/76843

摘要： A refractory metal nitride is deposited at a temperature of 600.degree. C. according to a chemical vapor phase deposition method by using a source gas containing a refractory metallic element and a reduction gas containing one of an alkyl amino compound, alkyl azide compound, hydrazine and a hydrazine alkyl compound for reducing the source gas. This refractory metal nitride is used as a barrier metal material for interconnection in a semiconductor device. When forming a refractory metal nitride as a barrier metal on a silicon layer or forming a contact metal between the barrier metal and the silicon layer, a natural oxide film on the surface of the silicon layer set in a pressure-reduced atmosphere is removed by reducing with hydrazine or a hydrazine alkyl compound.

摘要翻译： 根据化学气相沉积法，通过使用含有难熔金属元素的源气体和含有烷基氨基化合物，烷基叠氮化合物，肼和其中之一的还原气体，在600℃的温度下沉积难熔金属氮化物 用于还原源气体的肼烷基化合物。 这种难熔金属氮化物用作半导体器件中的互连的阻挡金属材料。 当在硅层上形成作为阻挡金属的难熔金属氮化物或在阻挡金属和硅层之间形成接触金属时，在减压气氛中设置的硅层表面上的自然氧化膜通过减少 与肼或肼烷基化合物反应。

公开(公告)号：US5264038A

公开(公告)日：1993-11-23

申请号：US567224

申请日：1990-08-14

申请人： Tatsushi Hara ,  Nobuhiro Misawa ,  Toshiya Suzuki ,  Takayuki Ohba ,  Fumitake Mieno ,  Akio Yamaguchi

发明人： Tatsushi Hara ,  Nobuhiro Misawa ,  Toshiya Suzuki ,  Takayuki Ohba ,  Fumitake Mieno ,  Akio Yamaguchi

IPC分类号： C23C16/44 ,  C23C16/04 ,  C23C16/448 ,  C23C16/455 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  C23C16/46

CPC分类号： C23C16/45517 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45591

摘要： A chemical vapor deposition (CVD) system for depositing a material selectively on a part of a substrate comprises a reaction chamber in which a CVD process is performed, a substrate holder and substrate heater provided within the reaction chamber, a gas inlet fixture provided on the reaction chamber for introducing one or more CVD source gases into the reaction chamber, and a reactant distribution fixture provided on the gas inlet fixture within the reaction chamber for controlling distribution of the reactant species in the reaction chamber, wherein the reactant distribution fixture defines a subspace surrounding the substrate within the space of the reaction chamber such that the subspace has a dimension, measured in a direction generally perpendicular to the surface of the substrate such that the dimension is at least less than one half of the mean free path of the reactant species realized inside the space of the reaction chamber during the CVD process and such that an opening is formed for communicating the subspace inside the reaction distribution means with the rest of the space of the reaction chamber for freely passing product species formed as a result of the chemical reaction at the surface of the substrate.

公开(公告)号：US5232872A

公开(公告)日：1993-08-03

申请号：US845549

申请日：1992-03-05

申请人： Takayuki Ohba

发明人： Takayuki Ohba

IPC分类号： H01L21/306 ,  H01L21/768

CPC分类号： H01L21/02063 ,  H01L21/76802 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76879 ,  Y10S148/017 ,  Y10S438/906 ,  Y10S438/907

摘要： A method of forming metal contact wiring layers in semiconductor devices by cleaning the surface of an exposed substrate of a contact hole formed to the SiO.sub.2 film on a semiconductor substrate with the reducing effect of N.sub.2 H.sub.4 gas, thereafter forming a TiN barrier layer by the CVD method using the mixed gas of N.sub.2 H.sub.4 and TiCl.sub.4 while the surface is not exposed to the air, then forming a tungsten contact layer thereon by the CVD method using the mixed gas of N.sub.2 H.sub.4 and WF.sub.6, or forming the TiN layer by the CVD method on the tungsten contact layer formed by the CVD method on the substrate.

摘要翻译： 在半导体器件中形成金属接触布线层的方法，通过在N2H4气体的还原作用下清洗在半导体衬底上形成的SiO 2膜的接触孔的露出表面，然后通过CVD法形成TiN阻挡层 在表面不暴露于空气的同时，使用N2H4和TiCl4的混合气体，然后通过CVD法使用N2H4和WF6的混合气体在其上形成钨接触层，或者通过CVD法在钨上形成TiN层 通过CVD法在基板上形成接触层。

公开(公告)号：US5066612A

公开(公告)日：1991-11-19

申请号：US637152

申请日：1991-01-03

申请人： Takayuki Ohba ,  Shinji Miyagaki ,  Tatsushi Hara ,  Kenji Morishita ,  Seiichi Suzuki ,  Seigen Ri

发明人： Takayuki Ohba ,  Shinji Miyagaki ,  Tatsushi Hara ,  Kenji Morishita ,  Seiichi Suzuki ,  Seigen Ri

IPC分类号： H01L21/768 ,  H01L23/485 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L23/485 ,  H01L21/76879 ,  H01L2924/0002

摘要： In the course of a production of a semiconductor device with a multilayer insulating layer, when a contact hole is opened in the multilayer insulating layer, an insulating layer activating a metal selective vapor-growth appears at the side wall of the contact hole. A thin metal (e.g., tungsten) layer is selectively deposited in the contact hole. In another case, another metal layer appears within the contact hole. An insulating film preventing a metal selective vapor-growth is deposited over the whole surface of the side wall of the contact hole, the metal layer and a top surface of the multilayer insulating layer, and is anisotropically etched to leave a portion of the film lying on the side wall only as a side wall insulating film. The contact hole is completely filled with another metal (tungsten) by a selective vapor-growth method, to flatten an exposed surface, and then a conductor (e.g., aluminum) line layer is formed on the metal layer in the contact hole and the multilayer insulating layer, to thereby complete the wiring structure of the semiconductor device.

摘要翻译： 在制造具有多层绝缘层的半导体器件的过程中，当多层绝缘层中的接触孔开放时，在接触孔的侧壁处出现激活金属选择性气相生长的绝缘层。 在接触孔中选择性地沉积薄金属（例如钨）层。 在另一种情况下，另一金属层出现在接触孔内。 防止金属选择性气相生长的绝缘膜沉积在接触孔的侧壁，金属层和多层绝缘层的顶表面的整个表面上，并被各向异性地蚀刻以使膜的一部分位于 在侧壁上仅作为侧壁绝缘膜。 接触孔通过选择性气相生长法完全填充另一种金属（钨），使露出的表面变平，然后在接触孔中的金属层上形成导体（例如，铝）线层，多层 绝缘层，从而完成半导体器件的布线结构。