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    Nitride-based semiconductor light-emitting device
    13.
    发明授权
    Nitride-based semiconductor light-emitting device 有权
    氮化物系半导体发光元件

    公开(公告)号：US07154123B2

    公开(公告)日：2006-12-26

    申请号：US11060484

    申请日：2005-02-18

    申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

    发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

    IPC分类号： H01L29/167

    CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44

    摘要： A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.

    摘要翻译： 提供了能够提高光提取效率的氮化物系半导体发光元件。 该氮化物系半导体发光元件包括形成在导电性基板的表面上的第一氮化物系半导体层，形成在第一氮化物系半导体层上的活性层，形成在活性物质上的第二氮化物系半导体层 层和透光层，形成在第二氮化物系半导体层上，载流子浓度低于第二氮化物系半导体层的载流子浓度。

    Semiconductor laser device and manufacturing method thereof
    16.
    发明授权
    Semiconductor laser device and manufacturing method thereof 失效
    半导体激光器件及其制造方法

    公开(公告)号：US5963572A

    公开(公告)日：1999-10-05

    申请号：US773346

    申请日：1996-12-26

    申请人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

    发明人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

    IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/222

    摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.

    摘要翻译： 一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层， 型包层，以及n型光限制层上形成的n型电流阻挡层。 光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。 光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。