公开(公告)号：US20090173962A1

公开(公告)日：2009-07-09

申请号：US12296806

申请日：2007-04-13

申请人： Kenzo Hanawa ,  Yasunori Yokoyama

发明人： Kenzo Hanawa ,  Yasunori Yokoyama

IPC分类号： H01L33/00 ,  H01L21/28

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor light-emitting device having a high light emission property and preventing an electrode from being peeled off during wire bonding. Also disclosed is a method of manufacturing a semiconductor light-emitting device 1 in which an n-type semiconductor layer (13), a light-emitting layer (14), and a p-type semiconductor layer (15) are formed on a substrate (11), a transparent positive electrode (16) is formed on the p-type semiconductor layer (15), a positive electrode bonding pad (17) is formed on the transparent positive electrode (16), and a negative electrode bonding pad (18) is formed on the n-type semiconductor layer (13).

摘要翻译： 一种具有高发光特性并防止电极在引线接合期间被剥离的半导体发光器件。 还公开了一种制造半导体发光器件1的方法，其中n型半导体层（13），发光层（14）和p型半导体层（15）形成在衬底上 （11）中，在p型半导体层（15）上形成透明正极（16），在透明正极（16）上形成正极焊盘（17），将负极接合焊盘 18）形成在n型半导体层（13）上。

公开(公告)号：US07935980B2

公开(公告)日：2011-05-03

申请号：US12296806

申请日：2007-04-13

申请人： Kenzo Hanawa ,  Yasunori Yokoyama

发明人： Kenzo Hanawa ,  Yasunori Yokoyama

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor light-emitting device having a high light emission property and preventing an electrode from being peeled off during wire bonding. Also disclosed is a method of manufacturing a semiconductor light-emitting device 1 in which an n-type semiconductor layer (13), a light-emitting layer (14), and a p-type semiconductor layer (15) are formed on a substrate (11), a transparent positive electrode (16) is formed on the p-type semiconductor layer (15), a positive electrode bonding pad (17) is formed on the transparent positive electrode (16), and a negative electrode bonding pad (18) is formed on the n-type semiconductor layer (13).

摘要翻译： 一种具有高发光特性并防止电极在引线接合期间被剥离的半导体发光器件。 还公开了一种半导体发光器件1的制造方法，其中n型半导体层（13），发光层（14）和p型半导体层（15）形成在衬底上 （11）中，在p型半导体层（15）上形成透明正极（16），在透明正极（16）上形成正极焊盘（17），将负极接合焊盘 18）形成在n型半导体层（13）上。

公开(公告)号：US08765507B2

公开(公告)日：2014-07-01

申请号：US12745304

申请日：2008-11-21

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/04

CPC分类号： C30B29/403 ,  C30B23/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/06 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/30111 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.

摘要翻译： 本发明的III族氮化物半导体的制造方法包括溅射工序，在基板和含Ga元素的靶的室中通过反应溅射法在基板上形成单晶III族氮化物半导体 其中所述溅射步骤包括各自的子步骤：在将衬底的温度设定为温度T1的同时进行III族氮化物半导体的成膜的第一溅射步骤; 以及在将衬底的温度降低到低于温度T1的温度T2的同时继续进行III族氮化物半导体的成膜的第二溅射步骤。

公开(公告)号：US08383439B2

公开(公告)日：2013-02-26

申请号：US12257065

申请日：2008-10-23

申请人： Yasunori Yokoyama ,  Takehiko Okabe ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Takehiko Okabe ,  Hisayuki Miki

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  C23C14/0078 ,  C23C14/0641 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate 11 using a sputtering method. The apparatus includes: a chamber 41; a target 47 that is arranged in the chamber 41 and includes a group-III element; a first plasma generating means 51 that generates a first plasma for sputtering the target 47 to supply raw material particles to the substrate 11; a second plasma generating means 52 that generates a second plasma including a nitrogen element; and a control means that controls the first plasma generating means 51 and the second plasma generating means 52 to alternately generate the first plasma and the second plasma in the chamber 41.

摘要翻译： 本发明提供一种具有高结晶度的III族氮化物半导体层的制造装置。 本发明的实施例提供一种使用溅射法在基板11上制造III族氮化物半导体层的装置。 该装置包括：室41; 设置在室41中并包括III族元件的靶47; 第一等离子体产生装置51，其产生用于溅射靶47以将原料颗粒供应到基板11的第一等离子体; 第二等离子体产生装置52，其产生包括氮元素的第二等离子体; 以及控制装置，其控制第一等离子体产生装置51和第二等离子体产生装置52，以在腔室41中交替地产生第一等离子体和第二等离子体。

公开(公告)号：US08106419B2

公开(公告)日：2012-01-31

申请号：US12377522

申请日：2007-11-05

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/02244 ,  H01S5/0425 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

摘要翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯。 该方法包括以下步骤：通过使包含V族元素的气体与等离子体中的金属材料反应而形成在基底（11）上形成由III族氮化物化合物制成的中间层（12） 并在中间层（12）上依次形成由III族氮化物化合物半导体制成的n型半导体层（14），发光层（15）和p型半导体层（16）。 使用氮作为V族元素，中间层（12）的厚度在20〜80nm的范围内。

公开(公告)号：US20100065855A1

公开(公告)日：2010-03-18

申请号：US12513595

申请日：2007-12-05

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/12

CPC分类号： H01L33/007 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/0002 ,  H01L2924/181 ,  H01S5/0206 ,  H01S5/32341 ,  H01S2304/04 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The object of the present invention is to provide a method of manufacturing a Group-III nitride semiconductor light-emitting device that is highly productive and that enables production of a device having excellent light-emitting properties; a Group-III nitride semiconductor light-emitting device; and a lamp using the light emitting device. The present invention provides a method of manufacturing a Group-III nitride semiconductor light-emitting device, comprising the steps of: activating a gas including a Group-V element and a metal material with plasma, thereby reacting the gas with the metal material; forming on a substrate an intermediate layer that is made of a Group-III nitride compound; and stacking an n-type semiconductor layer that is made of a Group-III nitride semiconductor, a light-emitting layer, and a p-type semiconductor layer, sequentially on the intermediate layer, wherein the Group-V element is nitrogen, the gas fraction of nitrogen in the gas is within a range of more than 20% to less than 99% during forming of the intermediate layer, and the intermediate layer is formed into a single crystal structure.

摘要翻译： 本发明的目的是提供一种制造高生产率的III族氮化物半导体发光器件的方法，并且能够制造具有优异的发光特性的器件; III族氮化物半导体发光器件; 以及使用该发光装置的灯。 本发明提供一种制造III族氮化物半导体发光器件的方法，包括以下步骤：用等离子体激活包括V族元素和金属材料的气体，从而使气体与金属材料反应; 在基板上形成由III族氮化物化合物制成的中间层; 并且在中间层上依次堆叠由III族氮化物半导体，发光层和p型半导体层制成的n型半导体层，其中V族元素为氮，气体 在形成中间层期间，气体中氮的分数在大于20％至小于99％的范围内，并且中间层形成为单晶结构。

公开(公告)号：US08273592B2

公开(公告)日：2012-09-25

申请号：US12513595

申请日：2007-12-05

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/0002 ,  H01L2924/181 ,  H01S5/0206 ,  H01S5/32341 ,  H01S2304/04 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The object of the present invention is to provide a method of manufacturing a Group-III nitride semiconductor light-emitting device that is highly productive and that enables production of a device having excellent light-emitting properties; a Group-III nitride semiconductor light-emitting device; and a lamp using the light emitting device. The present invention provides a method of manufacturing a Group-III nitride semiconductor light-emitting device, comprising the steps of: activating a gas including a Group-V element and a metal material with plasma, thereby reacting the gas with the metal material; forming on a substrate an intermediate layer that is made of a Group-III nitride compound; and stacking an n-type semiconductor layer that is made of a Group-III nitride semiconductor, a light-emitting layer, and a p-type semiconductor layer, sequentially on the intermediate layer, wherein the Group-V element is nitrogen, the gas fraction of nitrogen in the gas is within a range of more than 20% to less than 99% during forming of the intermediate layer, and the intermediate layer is formed into a single crystal structure.

摘要翻译： 本发明的目的是提供一种制造高生产率的III族氮化物半导体发光器件的方法，并且能够制造具有优异的发光特性的器件; III族氮化物半导体发光器件; 以及使用该发光装置的灯。 本发明提供一种制造III族氮化物半导体发光器件的方法，包括以下步骤：用等离子体激活包括V族元素和金属材料的气体，从而使气体与金属材料反应; 在基板上形成由III族氮化物化合物制成的中间层; 并且在中间层上依次堆叠由III族氮化物半导体，发光层和p型半导体层制成的n型半导体层，其中V族元素为氮，气体 在形成中间层期间，气体中氮的分数在大于20％至小于99％的范围内，并且中间层形成为单晶结构。

公开(公告)号：US08227359B2

公开(公告)日：2012-07-24

申请号：US13205569

申请日：2011-08-08

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L21/00 ,  H01L21/324 ,  H01L21/477

CPC分类号： C23C14/0617 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631 ,  H01L33/007 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.

摘要翻译： 根据本发明的制造III族氮化物半导体层的方法包括溅射步骤，将基板和包含III族元素的靶设置在室中，在室中引入用于形成等离子体的气体，并形成组 III族氮化物半导体层通过反应溅射法在衬底上添加Si作为掺杂剂，其中在用于形成等离子体的气体中加入Si氢化物。

公开(公告)号：US20100244040A1

公开(公告)日：2010-09-30

申请号：US12377522

申请日：2007-11-05

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/32 ,  H01L21/203

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/02244 ,  H01S5/0425 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

摘要翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯。 该方法包括以下步骤：通过使包含V族元素的气体与等离子体中的金属材料反应而形成在基底（11）上形成由III族氮化物化合物制成的中间层（12） 并在中间层（12）上依次形成由III族氮化物化合物半导体制成的n型半导体层（14），发光层（15）和p型半导体层（16）。 使用氮作为V族元素，中间层（12）的厚度在20〜80nm的范围内。

公开(公告)号：US09040319B2

公开(公告)日：2015-05-26

申请号：US13326542

申请日：2011-12-15

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L21/02 ,  H01L33/00 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042 ,  H01S5/30 ,  H01S5/343

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/02244 ,  H01S5/0425 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

摘要翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯。 该方法包括以下步骤：通过使包含V族元素的气体与等离子体中的金属材料反应而形成在基底（11）上形成由III族氮化物化合物制成的中间层（12） 并在中间层（12）上依次形成由III族氮化物化合物半导体制成的n型半导体层（14），发光层（15）和p型半导体层（16）。 使用氮作为V族元素，中间层（12）的厚度在20〜80nm的范围内。