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    Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum
    16.
    发明授权
    Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum 失效
    具有辅助背面磁体的溅射室以提高蚀刻均匀性，并产生磁控管，从而产生钌和钽的持续自溅射

    公开(公告)号：US08557094B2

    公开(公告)日：2013-10-15

    申请号：US11689720

    申请日：2007-03-22

    申请人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

    发明人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

    IPC分类号： C23C14/34

    CPC分类号： C23C14/0641 ,  C23C14/345 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

    摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.

    摘要翻译： 一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。 源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。 通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。 它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。 集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

    Selective ruthenium deposition on copper materials
    17.
    发明授权
    Selective ruthenium deposition on copper materials 有权
    选择性钌沉积在铜材料上

    公开(公告)号：US07737028B2

    公开(公告)日：2010-06-15

    申请号：US12240822

    申请日：2008-09-29

    申请人： Rongjun Wang ,  Hua Chung ,  Jick M. Yu ,  Praburam Gopalraja

    发明人： Rongjun Wang ,  Hua Chung ,  Jick M. Yu ,  Praburam Gopalraja

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/18 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76868 ,  H01L21/76871 ,  H01L2221/1089

    摘要： Embodiments of the invention provide processes for selectively forming a ruthenium-containing film on a copper surface over exposed dielectric surfaces. Thereafter, a copper bulk layer may be deposited on the ruthenium-containing film. In one embodiment, a method for forming layers on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a copper-containing surface and a dielectric surface, exposing the substrate to a ruthenium precursor to selectively form a ruthenium-containing film over the copper-containing surface while leaving exposed the dielectric surface, and depositing a copper bulk layer over the ruthenium-containing film.

    摘要翻译： 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成含钌膜的方法。 此后，可以将铜本体层沉积在含钌膜上。 在一个实施例中，提供了一种用于在衬底上形成层的方法，其包括将衬底定位在处理室内，其中衬底包含含铜表面和电介质表面，将衬底暴露于钌前体以选择性地形成钌 同时留下电介质表面，并在含钌膜上沉积铜体积层。

    PROCESS FOR SELECTIVE GROWTH OF FILMS DURING ECP PLATING
    19.
    发明申请
    PROCESS FOR SELECTIVE GROWTH OF FILMS DURING ECP PLATING 失效
    ECP镀层选择生长膜的工艺

    公开(公告)号：US20090215264A1

    公开(公告)日：2009-08-27

    申请号：US12037578

    申请日：2008-02-26

    申请人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

    发明人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76879 ,  C25D5/02 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76862 ,  H01L21/76873

    摘要： Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.

    摘要翻译： 提供了在电镀工艺中控制金属在基片的场区上沉积的方法。 在一个方面，电介质层在等离子体上沉积在图案化衬底的场区上，留下在开口中暴露的导电表面。 场区域上的电镀被减少或消除，导致无空隙特征和最小的多余电镀。 在另一方面，可以使用可以是金属的电阻层来代替电介质。 在另一方面，导电场区域的表面被修改以相对于开口的侧壁和底部改变其化学势。