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31 条记录 (耗时 0.022 秒)

    Method for alloy-electroplating group IB metals with refractory metals for interconnections
    13.
    发明授权
    Method for alloy-electroplating group IB metals with refractory metals for interconnections 失效
    合金电镀IB族金属与难熔金属互连的方法

    公开(公告)号：US06930391B2

    公开(公告)日：2005-08-16

    申请号：US10228539

    申请日：2002-08-27

    申请人： Grant M. Kloster ,  Sean J. Hearne

    发明人： Grant M. Kloster ,  Sean J. Hearne

    IPC分类号： C25D3/56 ,  C25D3/58 ,  H01L21/285 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48

    CPC分类号： H01L21/76843 ,  C25D3/56 ,  C25D3/58 ,  H01L21/2855 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An electroplated metal alloy including at least three elements. A multilayer interconnection structure that includes a substrate that is an interior of the interconnection structure, a conductive seed layer exterior to the substrate, and an electroplated metal alloy layer including at least three elements exterior to the conductive seed layer. A multilayer interconnection structure formed on a substrate, that includes a barrier layer, and a conductive seed layer, wherein the improvement includes an electroplated metal alloy layer including at least three elements. A method for forming a multilayer interconnection structure that includes providing a substrate, depositing a conductive seed layer, and electroplating a metal alloy layer including at least three elements exterior to the conductive seed layer.

    摘要翻译： 包括至少三种元素的电镀金属合金。 一种多层互连结构，其包括作为所述互连结构的内部的基板，所述基板的外部的导电种子层，以及在所述导电种子层外部包括至少三个元素的电镀金属合金层。 形成在包括阻挡层和导电种子层的基板上的多层互连结构，其中所述改进包括包括至少三个元素的电镀金属合金层。 一种用于形成多层互连结构的方法，包括提供衬底，沉积导电种子层，以及将包括至少三个元素的金属合金层电镀到导电种子层外部。

    Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
    18.
    发明授权
    Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics 失效
    用于改善沉积在低介电常数电介质上的CVD和ALD膜的成核和粘附的方法

    公开(公告)号：US06605549B2

    公开(公告)日：2003-08-12

    申请号：US09968212

    申请日：2001-09-29

    申请人： Jihperng Leu ,  Chih-I Wu ,  Ying Zhou ,  Grant M. Kloster

    发明人： Jihperng Leu ,  Chih-I Wu ,  Ying Zhou ,  Grant M. Kloster

    IPC分类号： H01L2131

    CPC分类号： H01L21/32051 ,  C23C16/02 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874

    摘要： A method to improve nucleation and/or adhesion of a CVD or ALD-deposited film/layer onto a low-dielectric constant (low-k) dielectric layer, such as a polymeric dielectric or a carbon-doped oxide. In an embodiment, the method includes providing a substrate into a deposition chamber. A dielectric layer having a reactive component is formed over the substrate. The formed dielectric layer having the reactive component is then processed to produce polar groups or polar sites at least on a surface of the formed dielectric layer. The present invention forms a low-k organic polymer dielectric layer or an organic-doped oxide dielectric layer having improved nucleation and/or adhesion properties for a subsequently deposited layer such as a barrier material layer.

    摘要翻译： 改善CVD或ALD沉积膜/层在低介电常数（低k）电介质层（例如聚合物电介质或碳掺杂氧化物）上的成核和/或粘附的方法。 在一个实施例中，该方法包括将衬底提供到沉积室中。 在基板上形成具有反应成分的电介质层。 然后将形成的具有反应性组分的介电层至少在形成的介电层的表面上进行处理以产生极性基团或极性位点。 本发明形成低k有机聚合物介电层或有机掺杂的氧化物介电层，其具有改进的成核和/或粘合性能，用于随后沉积的层例如阻挡材料层。

    Low-K dielectric structure and method
    19.
    发明授权
    Low-K dielectric structure and method 有权
    低K电介质结构及方法

    公开(公告)号：US07294934B2

    公开(公告)日：2007-11-13

    申请号：US10301957

    申请日：2002-11-21

    申请人： Grant M. Kloster ,  Xiarong Morrow ,  Jihperng Leu

    发明人： Grant M. Kloster ,  Xiarong Morrow ,  Jihperng Leu

    IPC分类号： H01L23/52

    CPC分类号： H01L23/5329 ,  H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a suitable porous or low density permeable material. At an appropriate time, the underlying sacrificial material is decomposed and diffused away through the overlying permeable material. As a result, at least one void is created, contributing to desirable dielectric characteristics.

    摘要翻译： 在由适当的多孔或低密度可渗透材料覆盖的微电子结构内形成低k电介质牺牲材料。 在适当的时间，潜在的牺牲材料通过上覆的可渗透材料分解和扩散。 结果，产生至少一个空隙，有助于所需的介电特性。

    Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures
    20.
    发明授权
    Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures 有权
    使用薄的可渗透硬掩模和所得结构在互连结构中形成气隙

    公开(公告)号：US07294568B2

    公开(公告)日：2007-11-13

    申请号：US10922617

    申请日：2004-08-20

    申请人： Michael D. Goodner ,  Kevin P. O'Brien ,  Grant M. Kloster

    发明人： Michael D. Goodner ,  Kevin P. O'Brien ,  Grant M. Kloster

    IPC分类号： H01L21/4763 ,  H01L21/764

    CPC分类号： H01L21/76807 ,  H01L21/7682

    摘要： A method of forming air gaps in the interconnect structure of an integrated circuit device. The air gaps may be formed by depositing sacrificial layer over a dielectric layer and then depositing a permeable hard mask over the sacrificial layer. The sacrificial layer is subsequently removed to form air gaps. The permeable hard mask may have a thickness of less than approximately 250 nm, and internal stresses within the permeable hard mask may be controlled to prevent deformation of this layer. Other embodiments are described and claimed.

    摘要翻译： 一种在集成电路器件的互连结构中形成气隙的方法。 气隙可以通过在介电层上沉积牺牲层然后在牺牲层上沉积可渗透的硬掩模来形成。 随后去除牺牲层以形成气隙。 可渗透的硬掩模可以具有小于约250nm的厚度，并且可以控制可渗透硬掩模内的内应力以防止该层的变形。 描述和要求保护其他实施例。