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11.发明申请公开(公告)号：US20150333481A1
公开(公告)日：2015-11-19
申请号：US14321711
申请日：2014-07-01
Applicant: IMEC VZW , Universiteit Gent
Inventor： Dries Van Thourhout , Zhechao Wang , Joris Van Campenhout , Maria Ioanna Pantouvaki
CPC classification number: H01S5/2077 , G02B6/12004 , G02B6/1228 , G02B2006/12078 , G02B2006/12121 , H01S5/0203 , H01S5/021 , H01S5/02236 , H01S5/026 , H01S5/042 , H01S5/2027 , H01S5/2214 , H01S5/2218 , H01S5/2272 , H01S5/3013 , H01S2301/176
Abstract: The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.
Abstract translation: 本公开涉及一种用于在半导体光子平台以及相应的器件/系统上集成亚微米III-V波导激光器的方法。 该方法包括在半导体衬底上提供电绝缘层，通过电绝缘层蚀刻宽度在50nm和800nm之间的沟槽，由此局部暴露硅衬底，从而提供III-V层堆叠 通过局部外延生长形成沟道波导，并且提供用于将辐射限制在局部外延生长的沟道波导中的光限制元件。
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公开(公告)号：US11886014B2
公开(公告)日：2024-01-30
申请号：US17522203
申请日：2021-11-09
Inventor： Junwen He , Joris Van Campenhout , Geert Van Steenberge , Jeroen Missinne , Yigit Yilmaz , Do Won Kim , Douglas Charles La Tulipe
CPC classification number: G02B6/36 , G02B6/12004 , G02B6/132 , G02B6/4214
Abstract: A silicon-based photonic chip is provided that includes an interface for optically coupling the photonic chip to an optical fiber or an optical fiber assembly. The interface includes: a single-mode waveguide configured to guide light and to provide a first light beam; a first optical element configured to expand the light beam in a first direction in-plane of the photonic chip, thereby providing an expanded light beam; and a second optical element configured to deflect and to further expand the expanded light beam in a second direction, thereby providing an output light beam from the photonic chip. Also provided are methods for fabricating such a photonic chip.
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公开(公告)号：US11600734B2
公开(公告)日：2023-03-07
申请号：US17373084
申请日：2021-07-12
Applicant: IMEC VZW
Inventor： Ashwyn Srinivasan , Maria Ioanna Pantouvaki , Joris Van Campenhout
IPC: H01L31/107 , H01L31/028 , H01L31/0352 , H01L31/18
Abstract: An avalanche photodiode (APD) device, in particular, a lateral separate absorption charge multiplication (SACM) APD device, and a method for its fabrication is provided. The APD device comprises a first contact region and a second contact region formed in a semiconductor layer. Further, the APD device comprises an absorption region formed on the semiconductor layer, wherein the absorption region is at least partly formed on a first region of the semiconductor layer, wherein the first region is arranged between the first contact region and the second contact region. The APD device further includes a charge region formed in the semiconductor layer between the first region and the second contact region, and an amplification region formed in the semiconductor layer between the charge region and the second contact region. At least the absorption region is curved on the semiconductor layer.
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公开(公告)号：US20220013682A1
公开(公告)日：2022-01-13
申请号：US17370578
申请日：2021-07-08
Applicant: IMEC VZW
Inventor： Ashwyn Srinivasan , Peter Verheyen , Philippe Absil , Joris Van Campenhout
IPC: H01L31/107 , H01L31/18
Abstract: A method is provided for fabricating an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method includes forming a first contact region and a second contact region in a semiconductor layer. Further, the method includes forming a first mask layer above at least a first contact region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second contact region of the semiconductor layer adjacent to the second contact region. Further, the method includes forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first contact region and the second contact region, and comprises forming an absorption region on the first contact region using the first mask layer. An APD fabricated by the disclosed method is also provided.
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公开(公告)号：US10690852B2
公开(公告)日：2020-06-23
申请号：US16228486
申请日：2018-12-20
Applicant: IMEC vzw
Abstract: A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.
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Patent Agency Ranking
公开(公告)号：US20190204216A1
公开(公告)日：2019-07-04
申请号：US16200352
申请日：2018-11-26
Applicant: IMEC vzw , Stichting IMEC Nederland
Inventor： Peter Offermans , Joris Van Campenhout
CPC classification number: G01N21/3586 , G01J1/0407 , G01J1/44 , G01J3/0205 , G01J3/42 , G01J5/0818 , G01J5/0837 , G01J5/10 , G01J5/28 , G02B6/12 , G02B6/1228 , G02F2203/13 , H01L31/09
Abstract: A solid-state device for photo detection, in general, of terahertz radiation is disclosed. One aspect is a detector device comprising a body having a photoconductive material, a first antenna element connected to a first portion of the body, and a second antenna element connected to a second portion of the body. The first antenna element and the second antenna element are arranged to induce an electric field in the body in response to an incident signal. Further, the device has a waveguide arranged to couple light into the photoconductive material via a coupling interface between the waveguide and the body, where the coupling interface faces away from the first portion and the second portion of the body and is closer to the first portion than to the second portion.
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公开(公告)号：US20190101711A1
公开(公告)日：2019-04-04
申请号：US16150898
申请日：2018-10-03
Applicant: IMEC VZW , Universiteit Gent
Inventor： Joris Van Campenhout , Bernardette Kunert , Maria Ioanna Pantouvaki , Dries Van Thourhout , Shi Yuting
Abstract: Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.
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公开(公告)号：US20160204298A1
公开(公告)日：2016-07-14
申请号：US14757617
申请日：2015-12-23
Applicant: IMEC VZW , Universiteit Gent
Inventor： Hongtao Chen , Joris Van Campenhout , Gunther Roelkens
IPC: H01L31/107 , H01L31/18 , H01L31/028 , H01L31/0232 , H01L31/105
CPC classification number: H01L31/107 , G02B6/42 , H01L31/02327 , H01L31/028 , H01L31/03529 , H01L31/105 , H01L31/1808 , Y02E10/50
Abstract: An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector comprises a Ge body adapted to conduct an optical mode. The Ge body comprises a first p-doped region that extends from a first main surface to a second main surface of the Ge body. The Ge body further comprises a first n-doped region that extends from the first main surface towards the second main surface of the Ge body. An intrinsic region occupies the undoped part of the Ge body. A first avalanche junction is formed by the first n-doped region that is located aside the p-doped region. The Ge body further comprises an incidence surface, suitable for receiving an optical mode, and a second n-doped Ge region that covers the Ge body and forms a second avalanche junction with the first p-doped region at the first main surface.
Abstract translation: 一种综合雪崩光电探测器及其制造方法。 集成雪崩光电检测器包括适于进行光学模式的Ge体。 Ge体包括从Ge体的第一主表面延伸到第二主表面的第一p掺杂区域。 Ge体还包括从Ge体的第一主表面朝向第二主表面延伸的第一n掺杂区域。 内在区域占据Ge体的未掺杂部分。 第一个雪崩结由位于p掺杂区域的第一n掺杂区域形成。 Ge体还包括适于接收光学模式的入射表面和覆盖Ge体并与第一主表面处的第一p掺杂区域形成第二雪崩结的第二n掺杂Ge区域。
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公开(公告)号：US11556043B2
公开(公告)日：2023-01-17
申请号：US17348049
申请日：2021-06-15
Applicant: IMEC VZW
Inventor： Younghyun Kim , Didit Yudistira , Bernardette Kunert , Joris Van Campenhout , Maria Ioanna Pantouvaki
Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.
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公开(公告)号：US20220011641A1
公开(公告)日：2022-01-13
申请号：US17348049
申请日：2021-06-15
Applicant: IMEC VZW
Inventor： Younghyun Kim , Didit Yudistira , Bernardette Kunert , Joris Van Campenhout , Maria Ioanna Pantouvaki
Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.
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