公开(公告)号：US20160353210A1

公开(公告)日：2016-12-01

申请号：US14724224

申请日：2015-05-28

Applicant: Infineon Technologies AG

Inventor： Ulrich Schmid ,  Tobias Frischmuth ,  Peter Irsigler ,  Thomas Grille ,  Daniel Maurer ,  Ursula Hedenig ,  Markus Kahn ,  Guenter Denifl ,  Michael Schneider

IPC: H04R19/04 ,  H04R31/00 ,  B81C1/00 ,  G01L9/00 ,  B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0167 ,  B81C2201/0177 ,  B81C2201/0181 ,  H04R2201/003

Abstract: A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

Abstract translation: 微机械结构包括衬底和布置在衬底上的功能结构。 功能结构包括响应于作用在功能区域上的力而相对于衬底可偏转的功能区域。 功能结构包括碳层布置，其中碳层布置的基础材料是碳材料。

公开(公告)号：US09212045B1

公开(公告)日：2015-12-15

申请号：US14448783

申请日：2014-07-31

Applicant: Infineon Technologies AG

Inventor： Ulrich Schmid ,  Tobias Frischmuth ,  Peter Irsigler ,  Thomas Grille ,  Daniel Maurer ,  Ursula Hedenig ,  Markus Kahn ,  Guenter Denifl

IPC: H01L29/66 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00658 ,  B81B2201/0257 ,  B81B2203/0127 ,  H04R19/005 ,  H04R31/00 ,  H04R2307/023

Abstract: A micro mechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure further includes a conductive base layer having a conductive base layer material. The conductive base layer material includes sectionally in a stiffening section a carbon material such that a carbon concentration of the carbon material in the conductive base layer material is at least 1014 per cubic cm and at least higher by a factor of 103 than in the conductive base layer material adjacent to the stiffening section.

Abstract translation: 微机械结构包括衬底和布置在衬底上的功能结构。 功能结构包括响应于作用在功能区上的力而相对于衬底可偏转的功能区域。 功能结构还包括具有导电性基底层材料的导电性基底层。 导电基层材料在硬化部分中包括碳材料，使得导电基材层材料中的碳材料的碳浓度至少为1014每立方厘米，并且至少高于导电基体中的103倍 邻近加强部分的层材料。

公开(公告)号：US20220085174A1

公开(公告)日：2022-03-17

申请号：US17532030

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L29/16 ,  H01L21/02 ,  H01L23/544 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

公开(公告)号：US11211459B2

公开(公告)日：2021-12-28

申请号：US16715439

申请日：2019-12-16

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L21/02 ,  H01L21/56 ,  H01L21/78 ,  H01L29/16 ,  H01L23/544 ,  H01L23/31

Abstract: An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.

公开(公告)号：US10903078B2

公开(公告)日：2021-01-26

申请号：US16422659

申请日：2019-05-24

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Alexander Breymesser ,  Guenter Denifl ,  Mihai Draghici ,  Bernhard Goller ,  Tobias Franz Wolfgang Hoechbauer ,  Wolfgang Lehnert ,  Roland Rupp ,  Werner Schustereder

IPC: H01L21/04 ,  H01L29/16 ,  H01L21/265 ,  H01L21/02 ,  H01L21/324

Abstract: A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.

公开(公告)号：US10106398B2

公开(公告)日：2018-10-23

申请号：US14724224

申请日：2015-05-28

Applicant: Infineon Technologies AG

Inventor： Ulrich Schmid ,  Tobias Frischmuth ,  Peter Irsigler ,  Thomas Grille ,  Daniel Maurer ,  Ursula Hedenig ,  Markus Kahn ,  Guenter Denifl ,  Michael Schneider

IPC: B81C1/00 ,  B81B3/00

Abstract: A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

公开(公告)号：US20180002167A1

公开(公告)日：2018-01-04

申请号：US15636702

申请日：2017-06-29

Applicant: Infineon Technologies AG

Inventor： Tobias Frischmuth ,  Guenter Denifl ,  Thomas Grille ,  Ursula Hedenig ,  Markus Kahn ,  Daniel Maurer ,  Ulrich Schmid ,  Michael Schneider

IPC: B81C1/00 ,  H04R19/04 ,  G01Q60/24 ,  H04R19/02 ,  B81B3/00 ,  G01L1/00

Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

公开(公告)号：US09741618B2

公开(公告)日：2017-08-22

申请号：US14979200

申请日：2015-12-22

Applicant: Infineon Technologies AG

Inventor： Gudrun Stranzl ,  Martin Zgaga ,  Markus Kahn ,  Guenter Denifl

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/762 ,  H01L21/02

CPC classification number: H01L21/78 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/82 ,  H01L21/8258

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

公开(公告)号：US20170030890A1

公开(公告)日：2017-02-02

申请号：US15221010

申请日：2016-07-27

Applicant: Infineon Technologies AG

Inventor： Gerald Holweg ,  Yonsuang Arnanthigo ,  Jan Berger ,  Guenter Denifl ,  Sylvicley Figueira Da Silva ,  Iris Moder ,  Thomas Ostermann ,  Alexander Oswatitsch ,  Vijaye Kumar Rajaraman ,  Gudrun Stranzl

IPC: G01N33/49 ,  B01D69/02 ,  B01D71/02 ,  B01D61/14

CPC classification number: G01N33/491 ,  B01D61/147 ,  B01D61/18 ,  B01D63/087 ,  B01D69/02 ,  B01D71/02 ,  B01D71/022 ,  B01D71/027 ,  B01D2313/345 ,  B01D2325/02 ,  B01D2325/26

Abstract: A microfiltration device comprises a substrate having a first surface and a second surface opposite to the first surface. The substrate includes a cavity between the first surface and the second surface. The substrate further includes a microfilter including a frame part in contact with the substrate and a filter part abutting the cavity. The microfilter comprises in both the frame part and the filter part a semiconducting or conducting material.

Abstract translation: 微滤装置包括具有第一表面和与第一表面相对的第二表面的基底。 衬底包括在第一表面和第二表面之间的空腔。 该基板还包括一个微型过滤器，它包括一个与该基板接触的框架部分和一个邻接腔体的过滤器部件。 微型过滤器在框架部分和过滤器部分中均包括半导体或导电材料。

公开(公告)号：US20140235035A1

公开(公告)日：2014-08-21

申请号：US14260903

申请日：2014-04-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Gudrun Stranzl ,  Martin Zgaga ,  Markus Kahn ,  Guenter Denifl

IPC: H01L21/78

CPC classification number: H01L21/78 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/82 ,  H01L21/8258

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底中形成开口。 该方法包括在开口内形成虚拟填充材料并使衬底变薄以暴露虚拟填充材料。 去除虚拟填充材料。