公开(公告)号：US20170032964A1

公开(公告)日：2017-02-02

申请号：US15215334

申请日：2016-07-20

Applicant: Infineon Technologies AG

Inventor： Daniel Kueck ,  Guenter Denifl ,  Werner Eigler ,  Roland Moennich

IPC: H01L21/04 ,  H01L29/06 ,  H01L29/16

CPC classification number: H01L21/045 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/046 ,  H01L21/324 ,  H01L29/1608

Abstract: A Method for protecting a surface of a substrate includes processing the substrate, forming a pyrolytic carbon layer on at least one surface of the substrate, and subjecting the substrate to thermal treatment, specifically above a temperature of about 1300° C., typically above about 1400° C.

Abstract translation: 一种用于保护衬底表面的方法包括处理衬底，在衬底的至少一个表面上形成热解碳层，并对衬底进行热处理，特别是高于约1300℃的温度，通常高于约1300℃ 1400°C

公开(公告)号：US09257342B2

公开(公告)日：2016-02-09

申请号：US14260903

申请日：2014-04-24

Applicant: Infineon Technologies AG

Inventor： Gudrun Stranzl ,  Martin Zgaga ,  Markus Kahn ,  Guenter Denifl

IPC: H01L21/82 ,  H01L21/78 ,  H01L21/8258 ,  H01L21/308

CPC classification number: H01L21/78 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/82 ,  H01L21/8258

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底中形成开口。 该方法包括在开口内形成虚拟填充材料并使衬底变薄以暴露虚拟填充材料。 去除虚拟填充材料。

公开(公告)号：US20160027677A1

公开(公告)日：2016-01-28

申请号：US14444889

申请日：2014-07-28

Applicant: Infineon Technologies AG

Inventor： Andreas Stefaner ,  Heimo Schieder ,  Guenter Denifl ,  Roland Moennich ,  Anton Gernot Winkler

IPC: H01L21/677 ,  C23C16/46 ,  H01L21/673 ,  C23C16/458

CPC classification number: C23C16/4587 ,  C23C8/10 ,  C23C16/458 ,  H01L21/02233 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/67309 ,  H01L21/67313 ,  H01L21/67754 ,  H01L21/67757

Abstract: A substrate carrier system for moving substrates in a vertical oven and a method for processing substrates are disclosed. In some embodiments, a method for oxidizing material or depositing material includes carrying a plurality of substrates by a substrate carrier and inserting the substrate carrier into a vertical oven, wherein the plurality of substrates are held by the substrate carrier in predefined positions, wherein an angle measured between a main surface of a substrate of the plurality of substrates at one of the predefined positions and a vertical direction is less than 20 degrees. The method further includes oxidizing a material on the plurality of substrates or depositing a material onto the plurality of substrates.

Abstract translation: 公开了一种用于在垂直烘箱中移动衬底的衬底载体系统和用于处理衬底的方法。 在一些实施例中，用于氧化材料或沉积材料的方法包括通过衬底载体承载多个衬底并将衬底载体插入垂直烘箱中，其中多个衬底由衬底载体保持在预定位置，其中角度 在预定位置之一和垂直方向上的多个基板的基板的主表面之间测量的小于20度。 该方法还包括氧化多个衬底上的材料或将材料沉积到多个衬底上。

公开(公告)号：US11990520B2

公开(公告)日：2024-05-21

申请号：US17532030

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L21/02 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/544 ,  H01L29/16

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/544

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

公开(公告)号：US10710874B2

公开(公告)日：2020-07-14

申请号：US15636702

申请日：2017-06-29

Applicant: Infineon Technologies AG

Inventor： Tobias Frischmuth ,  Guenter Denifl ,  Thomas Grille ,  Ursula Hedenig ,  Markus Kahn ,  Daniel Maurer ,  Ulrich Schmid ,  Michael Schneider

IPC: H04R19/00 ,  B81C1/00 ,  G01Q70/14 ,  H04R7/26 ,  G01L7/08 ,  G01L1/00 ,  B81B3/00 ,  G01Q60/24 ,  H04R19/02 ,  H04R7/10 ,  H04R19/04

Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

公开(公告)号：US20170194205A1

公开(公告)日：2017-07-06

申请号：US14979200

申请日：2015-12-22

Applicant: Infineon Technologies AG

Inventor： Gudrun Stranzl ,  Martin Zgaga ,  Markus Kahn ,  Guenter Denifl

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L21/78 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/82 ,  H01L21/8258

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

公开(公告)号：US11107732B2

公开(公告)日：2021-08-31

申请号：US16410724

申请日：2019-05-13

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Guenter Denifl ,  Tobias Franz Wolfgang Hoechbauer ,  Martin Huber ,  Wolfgang Lehnert ,  Roland Rupp ,  Hans-Joachim Schulze

IPC: H01L21/78 ,  H01L21/02

Abstract: A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.

公开(公告)号：US20170067158A1

公开(公告)日：2017-03-09

申请号：US15356160

申请日：2016-11-18

Applicant: Infineon Technologies AG

Inventor： Andreas Stefaner ,  Heimo Schieder ,  Guenter Denifl ,  Roland Moennich ,  Anton Gernot Winkler

IPC: C23C16/458 ,  H01L21/673 ,  H01L21/677 ,  H01L21/02

CPC classification number: C23C16/4587 ,  C23C8/10 ,  C23C16/458 ,  H01L21/02233 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/67309 ,  H01L21/67313 ,  H01L21/67754 ,  H01L21/67757

Abstract: A substrate carrier system for carrying substrates to a vertical oven and a vertical oven are disclosed. In an embodiment, the system includes a substrate carrier configured to carry a plurality of substrates and a substrate carrier support structure configured to be inserted along an insertion direction into the vertical oven, and to receive the substrate carrier in a direction substantially orthogonal to the insertion direction into a holding position in the substrate carrier support structure.

Abstract translation: 公开了用于将基板输送到立式烘箱和立式烘箱的基板载体系统。 在一个实施例中，系统包括被配置为承载多个基板的基板载体和构造成沿着插入方向插入垂直烘箱中的基板载体支撑结构，并且在基本正交于插入件的方向上接收基板载体 方向进入衬底载体支撑结构中的保持位置。

公开(公告)号：US20140335700A1

公开(公告)日：2014-11-13

申请号：US13892003

申请日：2013-05-10

Applicant: Infineon Technologies AG

Inventor： Guenter Denifl ,  Markus Kahn ,  Helmut Schoenherr ,  Daniel Maurer ,  Thomas Grille ,  Joachim Hirschler ,  Ursula Hedenig ,  Roland Moennich ,  Matthias Kuenle

IPC: H01L21/02 ,  C23C16/26

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362

Abstract: Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. Such carbon layers may be subjected to high temperature processing without showing excessive shrinking.

Abstract translation: 通过选择相应的处理参数，可以通过等离子体增强化学气相沉积来沉积具有降低的氢含量的碳层。 这样的碳层可以经受高温处理而不会显着过度收缩。

公开(公告)号：US09530678B2

公开(公告)日：2016-12-27

申请号：US14444889

申请日：2014-07-28

Applicant: Infineon Technologies AG

Inventor： Andreas Stefaner ,  Heimo Schieder ,  Guenter Denifl ,  Roland Moennich ,  Anton Gernot Winkler

IPC: H01L21/673 ,  H01L21/677 ,  C23C16/458 ,  H01L21/02 ,  C23C8/10

CPC classification number: C23C16/4587 ,  C23C8/10 ,  C23C16/458 ,  H01L21/02233 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/67309 ,  H01L21/67313 ,  H01L21/67754 ,  H01L21/67757

Abstract: A substrate carrier system for moving substrates in a vertical oven and a method for processing substrates are disclosed. In some embodiments, a method for oxidizing material or depositing material includes carrying a plurality of substrates by a substrate carrier and inserting the substrate carrier into a vertical oven, wherein the plurality of substrates are held by the substrate carrier in predefined positions, wherein an angle measured between a main surface of a substrate of the plurality of substrates at one of the predefined positions and a vertical direction is less than 20 degrees. The method further includes oxidizing a material on the plurality of substrates or depositing a material onto the plurality of substrates.

Abstract translation: 公开了一种用于在垂直烘箱中移动衬底的衬底载体系统和用于处理衬底的方法。 在一些实施例中，用于氧化材料或沉积材料的方法包括通过衬底载体承载多个衬底并将衬底载体插入垂直烘箱中，其中多个衬底由衬底载体保持在预定位置，其中角度 在预定位置之一和垂直方向上的多个基板的基板的主表面之间测量的小于20度。 该方法还包括氧化多个衬底上的材料或将材料沉积到多个衬底上。