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    INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
    11.
    发明申请
    INTEGRATED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 有权
    集成半导体器件和制造方法

    公开(公告)号：US20170015546A1

    公开(公告)日：2017-01-19

    申请号：US15208975

    申请日：2016-07-13

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Alessia Scire ,  Maik Stegemann ,  Bernhard Winkler ,  Andre Roeth ,  Steffen Bieselt ,  Mirko Vogt

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81C1/0015 ,  B81B3/0078 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/0163

    Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

    Abstract translation: 本公开涉及一种集成半导体器件，包括半导体衬底; 形成在半导体衬底中的腔; 所述半导体衬底的传感器部分经由所述半导体衬底和所述传感器部分互连的所述半导体衬底的悬置部分在所述空腔的一侧偏转地悬挂在所述空腔中，其中所述悬架部分沿着所述腔的侧面的延伸为 小于腔的所述侧的延伸部。

    SENSOR STRUCTURES, SYSTEMS AND METHODS WITH IMPROVED INTEGRATION AND OPTIMIZED FOOTPRINT
    13.
    发明申请
    SENSOR STRUCTURES, SYSTEMS AND METHODS WITH IMPROVED INTEGRATION AND OPTIMIZED FOOTPRINT 有权
    传感器结构，系统和方法与改进的集成和优化的FOOTPRINT

    公开(公告)号：US20150210533A1

    公开(公告)日：2015-07-30

    申请号：US14163205

    申请日：2014-01-24

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Fröhlich ,  Mirko Vogt ,  Maik Stegemann ,  Andre Röth ,  Bernhard Winkler ,  Boris Binder

    IPC: B81B3/00 ,  G01L9/00

    CPC classification number: G01L9/0072 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  G01L9/0041 ,  G01L9/0073

    Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.

    Abstract translation: 实施例涉及传感器，更具体地涉及形成传感器的结构和方法，所述传感器更容易制造为集成部件并提供传感器膜，薄片或其它可移动元件的改进偏转。 在实施例中，传感器包括用于薄片，膜或其它可移动元件的支撑结构。 支撑结构包括保持或承载可移动元件的多个支撑元件。 支撑元件可以包括单个点或脚状元件，而不是传统的互连框架，其能够改善可移动元件的运动，在制造期间更容易地去除可移动元件和基板之间的牺牲层，并且具有更有利的偏移比， 其他好处。

    SYSTEMS AND METHODS FOR HORIZONTAL INTEGRATION OF ACCELERATION SENSOR STRUCTURES
    15.
    发明申请
    SYSTEMS AND METHODS FOR HORIZONTAL INTEGRATION OF ACCELERATION SENSOR STRUCTURES 审中-公开
    用于加速传感器结构的水平积分的系统和方法

    公开(公告)号：US20160185594A1

    公开(公告)日：2016-06-30

    申请号：US15064916

    申请日：2016-03-09

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Mirko Vogt ,  Maik Stegemann ,  Andre Roeth ,  Steffen Bieselt

    IPC: B81B7/02

    CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0764 ,  H01L21/3065 ,  H01L29/84

    Abstract: Embodiments relate to integrated circuit sensors, and more particularly to sensors integrated in an integrated circuit structure and methods for producing the sensors. In an embodiment, a sensor device comprises a substrate; a first trench in the substrate; a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.

    Abstract translation: 实施例涉及集成电路传感器，更具体地涉及集成在集成电路结构中的传感器和用于产生传感器的方法。 在一个实施例中，传感器装置包括衬底; 衬底中的第一沟槽; 第一可移动元件，其通过彼此间隔开并布置在第一可移动元件的周边的第一多个支撑元件悬挂在第一沟槽中; 以及布置在所述基板上以密封所述第一沟槽的第一层，从而提供包含所述第一可移动元件和所述第一多个支撑元件的第一空腔。

    Method and structure for creating cavities with extreme aspect ratios
    19.
    发明授权
    Method and structure for creating cavities with extreme aspect ratios 有权
    用于创建具有极高宽比的腔体的方法和结构

    公开(公告)号：US09136136B2

    公开(公告)日：2015-09-15

    申请号：US14031694

    申请日：2013-09-19

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Fröhlich ,  Mirko Vogt ,  Maik Stegemann

    IPC: H01L21/306 ,  G01N33/487 ,  G01N27/414 ,  G01N27/447 ,  H01L29/06

    CPC classification number: B81C1/00619 ,  B81C1/00047 ,  B81C1/00476 ,  G01N27/414 ,  G01N27/4473 ,  G01N33/48721 ,  H01L21/30604 ,  H01L29/06

    Abstract: Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.

    Abstract translation: 实施例涉及用于更有效地和有效地蚀刻衬底和其它结构中的牺牲层和其它层的结构，系统和方法。 在实施例中，其中牺牲层被去除以例如形成空腔的衬底包括蚀刻分散体系统，其包括沟槽，沟道或其它结构，其中蚀刻气体或其它合适的气体，流体或物质可以流过其中 衬底并去除牺牲层。 沟槽，沟道或其它结构可以与形成在衬底中的开口或其他孔一起实现，例如靠近衬底的一个或多个边缘，以更快地将蚀刻气体或一些其它物质分散在衬底内。

    METHOD AND STRUCTURE FOR CREATING CAVITIES WITH EXTREME ASPECT RATIOS
    20.
    发明申请
    METHOD AND STRUCTURE FOR CREATING CAVITIES WITH EXTREME ASPECT RATIOS 有权
    用极端的方法创建CAVIITY的方法和结构

    公开(公告)号：US20150079787A1

    公开(公告)日：2015-03-19

    申请号：US14031694

    申请日：2013-09-19

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Fröhlich ,  Mirko Vogt ,  Maik Stegemann

    IPC: H01L21/306 ,  H01L29/06

    CPC classification number: B81C1/00619 ,  B81C1/00047 ,  B81C1/00476 ,  G01N27/414 ,  G01N27/4473 ,  G01N33/48721 ,  H01L21/30604 ,  H01L29/06

    Abstract: Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.

    Abstract translation: 实施例涉及用于更有效地和有效地蚀刻衬底和其它结构中的牺牲层和其它层的结构，系统和方法。 在实施例中，其中牺牲层被去除以例如形成空腔的衬底包括蚀刻分散体系统，其包括沟槽，沟道或其它结构，其中蚀刻气体或其它合适的气体，流体或物质可以流过其中 衬底并去除牺牲层。 沟槽，沟道或其它结构可以与形成在衬底中的开口或其他孔一起实现，例如靠近衬底的一个或多个边缘，以更快地将蚀刻气体或一些其它物质分散在衬底内。

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