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公开(公告)号:US20210082822A1
公开(公告)日:2021-03-18
申请号:US16573943
申请日:2019-09-17
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Henning Braunisch , Shawna Liff , Brandon Rawlings , Veronica Strong , Johanna Swan
IPC: H01L23/538 , H01L23/00 , H01L23/498
Abstract: An electronic interposer may be formed comprising an upper section, a lower section and a middle section. The upper section and the lower section may each have between two and four layers, wherein each layer comprises an organic material layer and at least one conductive route comprising at least one conductive trace and at least one conductive via. The middle section may be formed between the upper section and the lower section, wherein the middle section comprises up to eight layers, wherein each layer comprises an organic material and at least one conductive route comprising at least one conductive trace and at least one conductive via, and wherein a thickness of each layer of the middle section is thinner than a thickness of any of the layers of the upper section and thinner than a thickness of any of the layers of the lower section.
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公开(公告)号:US10090259B2
公开(公告)日:2018-10-02
申请号:US14757835
申请日:2015-12-26
Applicant: Intel Corporation
Inventor: Pramod Malatkar , Sairam Agraharam , Shawna Liff
Abstract: Electronic device shape configuration technology is disclosed. In an example, an electronic device substrate is provided that can comprise a top surface, and a bottom surface opposing the top surface. The top surface and/or the bottom surface can have a non-rectangular shaped perimeter. An electronic device die is also provided that can comprise a top surface, and a bottom surface opposing the top surface. The top surface and/or the bottom surface can have a non-rectangular shaped perimeter. In addition, an electronic device package is provided that can comprise a substrate having a top surface configured to receive a die and a bottom surface opposing the top surface. The package can also include a die having a top surface and a bottom surface opposing the top surface. The die can be coupled to the top surface of the substrate. The top surface and/or the bottom surface of either the substrate, or the die, or both can have a non-rectangular shaped perimeter.
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公开(公告)号:US20180049309A1
公开(公告)日:2018-02-15
申请号:US15793524
申请日:2017-10-25
Applicant: Intel Corporation
Inventor: Adel A. Elsherbini , Aleksandar Aleksov , Shawna Liff
CPC classification number: H05K1/028 , H05K1/0283 , H05K1/0393 , H05K1/115 , H05K1/118 , H05K1/181 , H05K3/22 , H05K3/284 , H05K3/301 , H05K3/4691 , H05K2201/05 , H05K2201/057 , H05K2201/09263 , H05K2201/095 , H05K2203/1316
Abstract: Some forms relate to a stretchable computing device that includes a stretchable body; a first electronic component embedded within the stretchable body; a second electronic component embedded within the stretchable body; and wherein the first electronic component and the second electronic component are connected by stretchable electrical connectors that include vias. The stretchable electrical connectors are non-planar and/or may have a partial zig-zag shape and/or a partial coil shape. In some forms, the stretchable computing device further includes a textile attached to the stretchable body.
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公开(公告)号:US09820384B2
公开(公告)日:2017-11-14
申请号:US14102676
申请日:2013-12-11
Applicant: Intel Corporation
Inventor: Sasha Oster , Robert L. Sankman , Charles Gealer , Omkar Karhade , John S. Guzek , Ravi V. Mahajan , James C. Matayabas, Jr. , Johanna Swan , Feras Eid , Shawna Liff , Timothy McIntosh , Telesphor Kamgaing , Adel Elsherbini , Kemal Aygun
CPC classification number: H05K1/189 , G06F1/163 , H01L21/568 , H01L24/19 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/12042 , H01L2924/181 , H01L2924/18162 , H05K1/0393 , H05K1/181 , H05K1/185 , H05K13/0469 , H05K2201/0137 , H05K2203/1469 , Y10T29/49146 , H01L2924/00
Abstract: This disclosure relates generally to devices, systems, and methods for making a flexible microelectronic assembly. In an example, a polymer is molded over a microelectronic component, the polymer mold assuming a substantially rigid state following the molding. A routing layer is formed with respect to the microelectronic component and the polymer mold, the routing layer including traces electrically coupled to the microelectronic component. An input is applied to the polymer mold, the polymer mold transitioning from the substantially rigid state to a substantially flexible state upon application of the input.
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公开(公告)号:US20240063147A1
公开(公告)日:2024-02-22
申请号:US17891704
申请日:2022-08-19
Applicant: Intel Corporation
Inventor: Adel Elsherbini , Mohammad Enamul Kabir , Johanna Swan , Omkar Karhade , Kimin Jun , Feras Eid , Shawna Liff , Xavier Brun , Bhaskar Jyoti Krishnatreya , Tushar Talukdar , Haris Khan Niazi
IPC: H01L23/00 , H01L25/065 , H01L21/56 , H01L23/31 , H01L23/29
CPC classification number: H01L23/564 , H01L24/08 , H01L24/24 , H01L25/0652 , H01L24/19 , H01L21/56 , H01L23/3107 , H01L23/291 , H01L2224/08145 , H01L24/16 , H01L2224/16227 , H01L2224/16238 , H01L2924/37001 , H01L2224/24145 , H01L24/73 , H01L2224/73259 , H01L2224/24225 , H01L2224/73209 , H01L2224/2499
Abstract: Techniques and mechanisms to mitigate corrosion to via structures of a composite chiplet. In an embodiment, a composite chiplet comprises multiple integrated circuit (IC) components which are each in a different respective one of multiple levels. One or more conductive vias extend through an insulator layer in a first level of the multiple levels. An annular structure of the composite chiplet extends vertically through the insulator layer, and surrounds the one or more conductive vias in the insulator layer. The annular structure mitigates an exposure of the one or more conductive vias to moisture which is in a region of the insulator layer that is not surrounded by the annular structure. In another embodiment, the annular structure further surrounds an IC component which extends in the insulator layer.
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公开(公告)号:US11309619B2
公开(公告)日:2022-04-19
申请号:US16327811
申请日:2016-09-23
Applicant: INTEL CORPORATION
Inventor: Sasha Oster , Georgios Dogiamis , Telesphor Kamgaing , Adel Elsherbini , Shawna Liff , Aleksandar Aleksov , Johanna Swan
Abstract: A waveguide coupling system may include at least one waveguide member retention structure disposed on an exterior surface of a semiconductor package. The waveguide member retention structure may be disposed a defined distance or at a defined location with respect to an antenna carried by the semiconductor package. The waveguide member retention structure may engage and guide a waveguide member slidably inserted into the respective waveguide member retention structure. The waveguide member retention structure may position the waveguide member at a defined location with respect to the antenna to maximize the power transfer from the antenna to the waveguide member.
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公开(公告)号:US20210358855A1
公开(公告)日:2021-11-18
申请号:US17388964
申请日:2021-07-29
Applicant: Intel Corporation
Inventor: Veronica Strong , Aleksandar Aleksov , Henning Braunisch , Brandon Rawlings , Johanna Swan , Shawna Liff
Abstract: An integrated circuit package may be formed including at least one die side integrated circuit device having an active surface electrically attached to an electronic interposer, wherein the at least one die side integrated circuit device is at least partially encased in a mold material layer and wherein a back surface of the at least one die side integrated circuit device is in substantially the same plane as an outer surface of the mold material layer. At least one stacked integrated circuit device may be electrically attached to the back surface of the at least one die side integrated circuit through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.
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18.
公开(公告)号:US20210280492A1
公开(公告)日:2021-09-09
申请号:US17318887
申请日:2021-05-12
Applicant: Intel Corporation
Inventor: Shawna Liff , Adel Elsherbini , Johanna Swan , Jimin Yao , Veronica Strong
IPC: H01L23/373 , H01L21/768 , H01L25/065 , H01L23/48
Abstract: A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.
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公开(公告)号:US11101205B2
公开(公告)日:2021-08-24
申请号:US16564168
申请日:2019-09-09
Applicant: Intel Corporation
Inventor: Johanna Swan , Henning Braunisch , Aleksandar Aleksov , Shawna Liff , Brandon Rawlings , Veronica Strong
IPC: H01L23/498 , G03F1/38 , G03F1/54 , G03F1/68
Abstract: An lithographic reticle may be formed comprising a transparent substrate, a substantially opaque mask formed on the transparent substrate that defines at least one exposure window, wherein the at least one exposure window has a first end, a first filter formed on the transparent substrate within the at least one exposure window and abutting the first end thereof, and a second filter formed on the transparent substrate within the at least one exposure window and abutting the first filter, wherein an average transmissivity of the first filter is substantially one half of a transmissivity of the second filter. In another embodiment, the at least one exposure window includes a third filter abutting the second end and is adjacent the second filter. Further embodiments of the present description include interconnection structures and systems fabricated using the lithographic reticle.
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公开(公告)号:US20210159179A1
公开(公告)日:2021-05-27
申请号:US16698557
申请日:2019-11-27
Applicant: Intel Corporation
Inventor: Adel Elsherbini , Shawna Liff , Johanna Swan , Gerald Pasdast
IPC: H01L23/538 , H01L21/304 , H01L21/48 , H01L23/00
Abstract: Techniques and mechanisms for high interconnect density communication with an interposer. In some embodiments, an interposer comprises a substrate and portions disposed thereon, wherein respective inorganic dielectrics of said portions adjoin each other at a material interface, which extends to each of the substrate and a first side of the interposer. A first hardware interface of the interposer spans the material interface at the first side, wherein a first one of said portions comprises first interconnects which couple the first hardware interface to a second hardware interface at the first side. A second one of said portions includes second interconnects which couple one of first hardware interface or the second hardware interface to a third hardware interface at another side of the interposer. In another embodiment, a metallization pitch feature of the first hardware interface is smaller than a corresponding metallization pitch feature of the second hardware interface.
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