公开(公告)号：US09401336B2

公开(公告)日：2016-07-26

申请号：US14532764

申请日：2014-11-04

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Harry D. Cox ,  Brian M. Erwin ,  Sarah H. Knickerbocker ,  Karen P. McLaughlin ,  David J. Russell

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/1181 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13164 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/94 ,  H01L2924/381 ,  H01L2924/01074 ,  H01L2924/01024 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/1146

Abstract: A semiconductor structures includes a contact fabricated utilizing a multi material trench-layer. The multi material trench layer is utilized to form a contact trench and the contact trench is utilized to form the contact therein. The trench-layer includes a lower barrier trench layer and an upper photoprocessing layer. The photoprocessing layer is utilized pattern and form contact trench. The barrier layer protects an electroplating conductive layer utilized in forming the contact from corrosion that may occur during the removal of the photoprocessing layer.

Abstract translation: 半导体结构包括利用多材料沟槽层制造的接触。 多材料沟槽层用于形成接触沟槽，并且接触沟槽用于在其中形成接触。 沟槽层包括下阻挡沟槽层和上光电处理层。 光刻处理层采用图案形成接触沟槽。 阻挡层保护用于形成接触的电镀导电层免受在去除光处理层期间可能发生的腐蚀。

公开(公告)号：US10276535B2

公开(公告)日：2019-04-30

申请号：US15794192

申请日：2017-10-26

Applicant: International Business Machines Corporation

Inventor： Anson J. Call ,  Vijayeshwar D. Khanna ,  David J. Russell ,  Krishna R. Tunga

IPC: H01L21/44 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48

Abstract: An electrical contact upon an interposer and/or upon a processing device includes a minor axis and a major axis. The contact is positioned such that the major axis is generally aligned with the direction of expansion of the interposer and/or the processing device. The electrical contact may further be positioned within a power/ground or input/output (I/O) region of the interposer and/or processing device. The electrical contact may further be positioned within a center region that is surrounded by a perimeter region of the interposer and/or the processing device. The dimensions or aspect ratios of major and minor axes of neighboring electrical contacts within an electrical contact grid may differ relative thereto. Further, the angle of respective major and minor axes of neighboring electrical contacts within the electrical contact grid may differ relative thereto.

公开(公告)号：US10206278B2

公开(公告)日：2019-02-12

申请号：US15804265

申请日：2017-11-06

Applicant: International Business Machines Corporation

Inventor： Bruce J. Chamberlain ,  Scott B. King ,  Joseph Kuczynski ,  David J. Russell

IPC: H05K5/00 ,  H05K1/18 ,  H05K1/02 ,  H05K1/11 ,  H05K7/00 ,  H05K1/16

Abstract: An apparatus is provided with a component configured with an interface comprising a resilient material. In a first state, the component is mechanically and/or electrically attached to a substrate. Exposure of the interface to the temperature that meets or exceeds the transition temperature of interface causes the resilient material to undergo a state change. The state change of the interface alters the position of the component, including separation of the component from the substrate. The separation disrupts the attachment thereby mitigating damage to the substrate and/or component.

公开(公告)号：US20180332701A1

公开(公告)日：2018-11-15

申请号：US16040790

申请日：2018-07-20

Applicant: International Business Machines Corporation

Inventor： Bruce J. Chamberlin ,  Scott B. King ,  Joseph Kuczynski ,  David J. Russell

IPC: H05K1/02 ,  H05K1/18 ,  H05K1/11 ,  H05K1/16

CPC classification number: H05K1/0201 ,  H05K1/0263 ,  H05K1/111 ,  H05K1/16 ,  H05K1/18 ,  H05K1/182 ,  H05K1/183 ,  H05K1/186 ,  H05K3/341 ,  H05K2201/0308 ,  H05K2201/10151 ,  H05K2201/10265 ,  H05K2201/105 ,  H05K2201/10568 ,  H05K2203/043 ,  H05K2203/175 ,  H05K2203/176

Abstract: An apparatus is provided with a component configured to be operatively coupled to an interface. In a first state, the component is mechanically and/or electrically attached to a substrate. Exposure of the interface to a thermal event that meets or exceeds a first temperature the resilient material is subject to undergo a state change to a second state. The state change includes a physical transformation of the interface, and includes a position change of the component.

公开(公告)号：US20180324945A1

公开(公告)日：2018-11-08

申请号：US15804265

申请日：2017-11-06

Applicant: International Business Machines Corporation

Inventor： Bruce J. Chamberlin ,  Scott B. King ,  Joseph Kuczynski ,  David J. Russell

IPC: H05K1/02 ,  H05K1/18 ,  H05K1/11

CPC classification number: H05K1/0293 ,  H05K1/0201 ,  H05K1/11 ,  H05K1/16 ,  H05K1/18 ,  H05K1/181 ,  H05K1/182 ,  H05K1/183 ,  H05K1/186 ,  H05K2201/0308

Abstract: An apparatus is provided with a component configured with an interface comprising a resilient material. In a first state, the component is mechanically and/or electrically attached to a substrate. Exposure of the interface to the temperature that meets or exceeds the transition temperature of interface causes the resilient material to undergo a state change. The state change of the interface alters the position of the component, including separation of the component from the substrate. The separation disrupts the attachment thereby mitigating damage to the substrate and/or component.

公开(公告)号：US09990707B2

公开(公告)日：2018-06-05

申请号：US15151794

申请日：2016-05-11

Applicant: International Business Machines Corporation

Inventor： Sarah K. Czaplewski ,  Scott B. King ,  Joseph Kuczynski ,  David J. Russell

IPC: G06T7/00 ,  G06T7/40

CPC classification number: G06T7/0006 ,  G06T7/0004 ,  G06T7/13 ,  G06T7/40 ,  G06T2207/30141

Abstract: In some embodiments, methods include acquiring a micrograph image of a plated through hole and converting the micrograph image to a binary image. Methods include defining a pixel line at a copper-dielectric material interface of the binary image. In some embodiments, methods include comparing a length of an interface line compared to a length of a portion to determine a roughness of the pixel line. In some embodiments, methods include determining a roughness of the hole wall before copper plating. Methods may include determining a roughness of the interface using the pixel line.

公开(公告)号：US09543255B2

公开(公告)日：2017-01-10

申请号：US15043631

申请日：2016-02-15

Applicant: International Business Machines Corporation

Inventor： Mark C. Lamorey ,  Shidong Li ,  Janak G. Patel ,  Douglas O. Powell ,  David J. Russell ,  Peter Slota, Jr. ,  David B. Stone

IPC: H05K3/02 ,  H05K3/10 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H05K1/02

CPC classification number: H01L23/562 ,  H01L21/4846 ,  H01L21/4857 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K1/0271 ,  H05K3/10 ,  Y10T29/49155 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A laminate structure includes a conductive layer and a dielectric layer in contact with the conductive layer, the dielectric layer comprises a selectively patterned high-modulus dielectric material that balances a differential stress between the conductive layer and the dielectric layer to mechanically stiffen the laminate structure and reduce warpage.

Abstract translation: 层压结构包括与导电层接触的导电层和电介质层，电介质层包括选择性图案化的高模量电介质材料，其平衡导电层和电介质层之间的差分应力，以机械加固层压结构和 减少翘曲

公开(公告)号：US20160157357A1

公开(公告)日：2016-06-02

申请号：US15043631

申请日：2016-02-15

Applicant: International Business Machines Corporation

Inventor： Mark C. Lamorey ,  Shidong Li ,  Janak G. Patel ,  Douglas O. Powell ,  David J. Russell ,  Peter Slota, JR. ,  David B. Stone

IPC: H05K3/10 ,  H05K1/02

CPC classification number: H01L23/562 ,  H01L21/4846 ,  H01L21/4857 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K1/0271 ,  H05K3/10 ,  Y10T29/49155 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A laminate structure includes a conductive layer and a dielectric layer in contact with the conductive layer, the dielectric layer comprises a selectively patterned high-modulus dielectric material that balances a differential stress between the conductive layer and the dielectric layer to mechanically stiffen the laminate structure and reduce warpage.

公开(公告)号：US20160155708A1

公开(公告)日：2016-06-02

申请号：US14557795

申请日：2014-12-02

Applicant: International Business Machines Corporation

Inventor： Mark C. Lamorey ,  Shidong Li ,  Janak G. Patel ,  Douglas O. Powell ,  David J. Russell ,  Peter Slota, JR. ,  David B. Stone

IPC: H01L23/00 ,  H01L21/48 ,  H05K3/10 ,  H01L23/498

CPC classification number: H01L23/562 ,  H01L21/4846 ,  H01L21/4857 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K1/0271 ,  H05K3/10 ,  Y10T29/49155 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A laminate structure includes a conductive layer and a dielectric layer in contact with the conductive layer, the dielectric layer comprises a selectively patterned high-modulus dielectric material that balances a differential stress between the conductive layer and the dielectric layer to mechanically stiffen the laminate structure and reduce warpage.

Abstract translation: 层压结构包括与导电层接触的导电层和电介质层，电介质层包括选择性图案化的高模量电介质材料，其平衡导电层和电介质层之间的差分应力，以机械加固层压结构和 减少翘曲

公开(公告)号：US20160079111A1

公开(公告)日：2016-03-17

申请号：US14858014

申请日：2015-09-18

Applicant: International Business Machines Corporation

Inventor： Richard S. Graf ,  Douglas O. Powell ,  David J. Russell ,  David J. West

IPC: H01L21/683 ,  H01L21/78

CPC classification number: H01L21/6835 ,  H01L21/2686 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Mechanisms are provided for sacrificial carrier dicing of semiconductor wafers. A bottom layer of a semiconductor wafer is bonded to a top layer of a sacrificial carrier. The semiconductor wafer is diced into a set of chips, such that the dicing cuts through the semiconductor wafer and into the sacrificial carrier and such that the sacrificial carrier dresses a diamond blade of a saw so as to expose one or more new, sharp layers of diamonds on the diamond blade.

Abstract translation: 提供用于半导体晶片的牺牲载体切割的机构。 将半导体晶片的底层结合到牺牲载体的顶层。 半导体晶片被切割成一组芯片，使得切割切割穿过半导体晶片并进入牺牲载体，并且使得牺牲载体连接锯的金刚石刀片，以便暴露一个或多个新的尖锐的层 金刚石刀片上的钻石。