公开(公告)号：US10475905B2

公开(公告)日：2019-11-12

申请号：US15886539

申请日：2018-02-01

Applicant: International Business Machines Corporation

Inventor： Chi-Chun Liu ,  Chun Wing Yeung ,  Robin Hsin Kuo Chao ,  Zhenxing Bi ,  Kristin Schmidt ,  Yann Mignot

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/311 ,  H01L29/40 ,  H01L29/423 ,  H01L21/3105

Abstract: Techniques for VFET gate length control are provided. In one aspect, a method of forming a VFET device includes: patterning fins in a substrate; forming first polymer spacers alongside opposite sidewalls of the fins; forming second polymer spacers offset from the fins by the first polymer spacers; removing the first polymer spacers selective to the second polymer spacers; reflowing the second polymer spacers to close a gap to the fins; forming a cladding layer above the second polymer spacers; removing the second polymer spacers; forming gates along opposite sidewalls of the fins exposed in between the bottom spacers and the cladding layer, wherein the gates have a gate length Lg set by removal of the second polymer spacers; forming top spacers above the cladding layer; and forming top source and drains above the top spacers. A VFET device is also provided.

公开(公告)号：US20170233532A1

公开(公告)日：2017-08-17

申请号：US15041095

申请日：2016-02-11

Applicant: International Business Machines Corporation

Inventor： Noel Arellano ,  Teddie P. Magbitang ,  Daniel P. Sanders ,  Kristin Schmidt ,  Ankit Vora

IPC: C08G81/02 ,  H01J37/32 ,  B05D7/00 ,  B05D3/02 ,  C09D169/00 ,  G03F7/00

CPC classification number: C08G81/027 ,  C08F2438/01 ,  C08G63/08 ,  C08G64/0233 ,  C08G64/18 ,  C08G65/08 ,  C09D125/08 ,  C09D125/18 ,  C09D167/04 ,  C09D169/00 ,  C09D187/005 ,  G03F7/0002 ,  H01J37/32009

Abstract: A high-chi diblock copolymer (BCP) for self-assembly comprises a first block comprising repeat units of trimethylsilyl styrene (TMSS) and styrene, and a second block comprising an aliphatic carbonate repeat unit. The blocks are linked together by a fluorinated junction group L′ in which none of the fluorines of L′ are covalently bound to an atomic center of the polymer backbone. A top-coat free film layer comprising the BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented lamellar domain pattern on an underlayer that is preferential or non-preferential to the domains of the block copolymer. The domain pattern can be selectively etched to provide a relief pattern comprising a remaining domain. The relief pattern having good critical dimensional uniformity compared to an otherwise identical polymer lacking the silicon.

公开(公告)号：US12299594B2

公开(公告)日：2025-05-13

申请号：US17246543

申请日：2021-04-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Maira G. de Bayser ,  Geeth Ranmal de Mel ,  Mathias B. Steiner ,  Mohab Elkaref ,  Ronaldo Giro ,  Bruce Gordon Elmegreen ,  Christopher R. Gibson ,  David Boaz ,  David S. Braines ,  Dean Clarke ,  Dmitry Zubarev ,  Flaviu Cipcigan ,  Kristin Schmidt ,  Lori French ,  Stacey Gifford

IPC: G06N5/04 ,  G06F16/3329 ,  G06F16/35 ,  G06F18/214 ,  G06N5/022 ,  G06N20/00

Abstract: A computer implemented method for generating query results includes generating by a computer processor, a training model through artificial intelligence. The training model is based on annotated data. A knowledge base for a subject matter is generated based on the training model. The knowledge base is based on content from document sources related to the subject matter. A natural language query input is received. An intent and requirements for satisfying the intent is inferred by the computer processor. The knowledge base is referenced to extract information related to the intent and requirements, from documents in the knowledge base. Relationships between the extracted information and the requirements are correlated from the documents in the knowledge base. Query results are displayed to the user. The query results are based on the correlated relationships.

公开(公告)号：US10755928B2

公开(公告)日：2020-08-25

申请号：US16258347

申请日：2019-01-25

Applicant: International Business Machines Corporation

Inventor： Chi-Chun Liu ,  Kristin Schmidt ,  Yann Mignot ,  Martha Inez Sanchez ,  Daniel Paul Sanders ,  Nelson Felix ,  Ekmini Anuja De Silva

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3105

Abstract: A plurality of mandrels and silicon dioxide spacer structures are formed, with the spacer structures interdigitated between the mandrels. An organic planarization layer is applied, as are a thin oxide layer and a layer of photoresist patterned in hole tone over the oxide layer, thereby defining a domain. At least one hole is etched in the thin oxide layer and the organic planarization layer to expose a portion of a hard mask layer surface between the spacer structures. A selective polymer brush is applied, which grafts only to the exposed hard mask surface, followed by solvent rinsing the domain to remove ungrafted polymer brush. At least one precursor is infused to an etch resistant material into the polymer brush by a sequential infiltration synthesis process. The organic planarization layer is ashed to convert the infused precursor into oxide form to further enhance etch selectivity to the hard mask layer.

公开(公告)号：US20200243335A1

公开(公告)日：2020-07-30

申请号：US16258347

申请日：2019-01-25

Applicant: International Business Machines Corporation

Inventor： Chi-Chun Liu ,  Kristin Schmidt ,  Yann Mignot ,  Martha Inez Sanchez ,  Daniel Paul Sanders ,  Nelson Felix ,  Ekmini Anuja De Silva

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/02

Abstract: A plurality of mandrels and silicon dioxide spacer structures are formed, with the spacer structures interdigitated between the mandrels. An organic planarization layer is applied, as are a thin oxide layer and a layer of photoresist patterned in hole tone over the oxide layer, thereby defining a domain. At least one hole is etched in the thin oxide layer and the organic planarization layer to expose a portion of a hard mask layer surface between the spacer structures. A selective polymer brush is applied, which grafts only to the exposed hard mask surface, followed by solvent rinsing the domain to remove ungrafted polymer brush. At least one precursor is infused to an etch resistant material into the polymer brush by a sequential infiltration synthesis process. The organic planarization layer is ashed to convert the infused precursor into oxide form to further enhance etch selectivity to the hard mask layer.

公开(公告)号：US20200050108A1

公开(公告)日：2020-02-13

申请号：US16101411

申请日：2018-08-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chi-Chun Liu ,  Indira Seshadri ,  Kristin Schmidt ,  Nelson Felix ,  Daniel Sanders ,  Jing Guo ,  Ekmini Anuja De Silva ,  Hoa Truong

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/09

Abstract: A self-priming resist may be formed from a first random copolymer forming a resist and a polymer brush having the general formula poly(A-r-B)-C-D, wherein A is a first polymer unit, B is a second polymer unit, wherein A and B are the same or different polymer units, C is a cleavable unit, D is a grafting group and r indicates that poly(A-r-B) is a second random copolymer formed from the first and second polymer units. The first random copolymer may be the same or different from the second random polymer. The self-priming resist can create a one-step method for forming an adhesion layer and resist by using the resist/brush blend.

公开(公告)号：US20200044055A1

公开(公告)日：2020-02-06

申请号：US16597713

申请日：2019-10-09

Applicant: International Business Machines Corporation

Inventor： Chi-Chun Liu ,  Chun Wing Yeung ,  Robin Hsin Kuo Chao ,  Zhenxing Bi ,  Kristin Schmidt ,  Yann Mignot

IPC: H01L29/66 ,  H01L21/311 ,  H01L29/40 ,  H01L29/423 ,  H01L21/3105 ,  H01L29/78

Abstract: Techniques for VFET gate length control are provided. In one aspect, a method of forming a VFET device includes: patterning fins in a substrate; forming first polymer spacers alongside opposite sidewalls of the fins; forming second polymer spacers offset from the fins by the first polymer spacers; removing the first polymer spacers selective to the second polymer spacers; reflowing the second polymer spacers to close a gap to the fins; forming a cladding layer above the second polymer spacers; removing the second polymer spacers; forming gates along opposite sidewalls of the fins exposed in between the bottom spacers and the cladding layer, wherein the gates have a gate length Lg set by removal of the second polymer spacers; forming top spacers above the cladding layer; and forming top source and drains above the top spacers. A VFET device is also provided.

公开(公告)号：US10256320B1

公开(公告)日：2019-04-09

申请号：US15726525

申请日：2017-10-06

Applicant: International Business Machines Corporation

Inventor： Chi-Chun Liu ,  Sanjay Mehta ,  Luciana Meli ,  Muthumanickam Sankarapandian ,  Kristin Schmidt ,  Ankit Vora

IPC: H01L29/66 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/78 ,  H01L29/08

Abstract: A vertical field-effect transistor and a method for fabricating the same. The vertical field-effect transistor includes a substrate and a bottom source/drain region. The vertical field-effect transistor also includes at least one fin structure, and further includes a bottom spacer layer. The bottom spacer layer has a substantially uniform thickness with a thickness variation of less than 3 nm. A gate structure contacts the bottom spacer layer and at least one fin structure. The method includes forming a structure including a substrate, a source/drain region, and one or more fins. A polymer brush spacer is formed in contact with at least sidewalls of the one or more fins. A polymer brush layer is formed in contact with at least the source/drain region and the polymer brush spacer. The polymer brush spacer is removed. Then, the polymer brush layer is reflowed to the sidewalls of the at least one fin.

公开(公告)号：US09982097B2

公开(公告)日：2018-05-29

申请号：US15041095

申请日：2016-02-11

Applicant: International Business Machines Corporation

Inventor： Noel Arellano ,  Teddie P. Magbitang ,  Daniel P. Sanders ,  Kristin Schmidt ,  Ankit Vora

IPC: C08G64/18 ,  C08G63/08 ,  C09D169/00 ,  C08G81/02 ,  G03F7/00 ,  B05D7/00 ,  B05D3/02 ,  H01J37/32 ,  C09D125/08 ,  C09D167/04 ,  C09D187/00 ,  C09D125/18 ,  C08G65/08 ,  C08G64/02

CPC classification number: C08G81/027 ,  C08F2438/01 ,  C08G63/08 ,  C08G64/0233 ,  C08G64/18 ,  C08G65/08 ,  C09D125/08 ,  C09D125/18 ,  C09D167/04 ,  C09D169/00 ,  C09D187/005 ,  G03F7/0002 ,  H01J37/32009

Abstract: A high-chi diblock copolymer (BCP) for self-assembly comprises a first block comprising repeat units of trimethylsilyl styrene (TMSS) and styrene, and a second block comprising an aliphatic carbonate repeat unit. The blocks are linked together by a fluorinated junction group L′ in which none of the fluorines of L′ are covalently bound to an atomic center of the polymer backbone. A top-coat free film layer comprising the BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented lamellar domain pattern on an underlayer that is preferential or non-preferential to the domains of the block copolymer. The domain pattern can be selectively etched to provide a relief pattern comprising a remaining domain. The relief pattern having good critical dimensional uniformity compared to an otherwise identical polymer lacking the silicon.

公开(公告)号：US09879152B2

公开(公告)日：2018-01-30

申请号：US14919070

申请日：2015-10-21

Applicant: International Business Machines Corporation

Inventor： Noel Arellano ,  Joy Cheng ,  Teddie P. Magbitang ,  Jed W. Pitera ,  Daniel P. Sanders ,  Kristin Schmidt ,  Hoa D. Truong ,  Ankit Vora

IPC: C09D153/00 ,  C09D169/00 ,  C09D167/04 ,  C09D125/08 ,  C08G63/64 ,  C08G63/08 ,  C08J7/04 ,  C08G64/18 ,  C08F212/08 ,  G03F7/00

CPC classification number: C09D169/005 ,  C08F212/08 ,  C08G63/08 ,  C08G63/64 ,  C08G63/6822 ,  C08G64/18 ,  C08J7/047 ,  C08J2333/12 ,  C08J2467/04 ,  C08J2469/00 ,  C09D125/08 ,  C09D153/00 ,  C09D167/04 ,  C09D169/00 ,  G03F7/0002

Abstract: Block copolymers (BCPs) for self-assembly applications comprise a linear fluorinated linking group L′ joining a pair of adjacent blocks. A film layer comprising a BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented domain pattern when the underlayer is preferentially wetted by one domain of an otherwise identical self-assembled BCP in which all fluorines of L′ are replaced by hydrogen. The BCP can be a low-chi or high-chi BCP. In a preferred embodiment, the BCP comprises a styrene-based first block, and a second block comprises a carbonate and/or ester repeat unit formed by ring opening polymerization of a cyclic carbonate and/or cyclic ester monomer. The linking group L′ has a lower surface energy than each of the polymer blocks.