公开(公告)号：US20170025274A1

公开(公告)日：2017-01-26

申请号：US14806921

申请日：2015-07-23

Applicant: International Business Machines Corporation

Inventor： Sebastian U. Engelmann ,  Mahmoud Khojasteh ,  Deborah A. Neumayer ,  John Papalia ,  Hsinyu Tsai

IPC: H01L21/033 ,  H01L21/027

CPC classification number: H01L21/0337 ,  B81C1/00396 ,  G03F7/0002 ,  G03F7/094

Abstract: A material stack is formed on the surface of a semiconductor substrate. The top layer of the material stack comprises at least an organic planarization layer. A neutral hard mask layer is formed on the top of the organic planarization layer. The neutral hard mask layer is neutral to the block copolymers used for direct self-assembly. A plurality of template etch stacks are then formed on top of the neutral hard mask layer. After formation of the template etch stacks, neutrality recovery is performed on the neutral hard mask layer and the top portions of the template etch stacks, the vertical sidewalls of the template etch stacks being substantially unaffected by the neutrality recovery. A template for DSA is thus obtained.

Abstract translation: 材料堆叠形成在半导体衬底的表面上。 材料堆叠的顶层至少包括有机平坦化层。 在有机平坦化层的顶部形成中性硬掩模层。 中性硬掩模层对于用于直接自组装的嵌段共聚物是中性的。 然后在中性硬掩模层的顶部上形成多个模板蚀刻堆叠。 在形成模板蚀刻堆叠之后，在中性硬掩模层和模板蚀刻堆叠的顶部进行中性恢复，模板蚀刻堆叠的垂直侧壁基本上不受中性恢复的影响。 因此获得DSA的模板。

公开(公告)号：US08920567B2

公开(公告)日：2014-12-30

申请号：US13786970

申请日：2013-03-06

Applicant: International Business Machines Corporation

Inventor： Vamsi Devarapalli ,  Colin J. Goyette ,  Michael R. Kennett ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  James J. Steffes ,  Adam D. Ticknor ,  Wei-tsu Tseng

IPC: B08B6/00 ,  B08B7/00 ,  C25F1/00 ,  C25F3/30 ,  H01L21/02

CPC classification number: H01L21/02068 ,  H01L21/02074 ,  H01L21/76883

Abstract: A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.

Abstract translation: 提供了一种用于先进互连技术的后金属化学 - 机械平面化（CMP）清洁工艺。 遵循CMP的方法依次组合了酸性清洁剂和碱性清洁剂。 相对于全基础清洁工艺，该方法可以实现CMP缺陷的减少60％以上，例如抛光残渣，异物，浆料磨料，划痕和中空金属。 该过程还消除了在辊刷清洁模块内的辊刷清洁过程中间歇性发生的圆环缺陷。

公开(公告)号：US11437502B2

公开(公告)日：2022-09-06

申请号：US16661446

申请日：2019-10-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Pouya Hashemi ,  Mahmoud Khojasteh ,  Tak H. Ning ,  Alexander Reznicek

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/66 ,  H01L29/205 ,  H01L21/762 ,  H01L21/306

Abstract: A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semiconductor material having a wider band gap than the first III-V semiconductor material. A dielectric region is present underlying the base region, emitter region and the collect region. The dielectric region has an inverted apex geometry. The sidewalls of dielectric region that extend to the apex of the inverted apex geometry are present on facets of a supporting substrate III-V semiconductor material having a {110} crystalline orientation.

公开(公告)号：US20200058777A1

公开(公告)日：2020-02-20

申请号：US16661518

申请日：2019-10-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Pouya Hashemi ,  Mahmoud Khojasteh ,  Tak H. Ning ,  Alexander Reznicek

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/06 ,  H01L29/205 ,  H01L21/306

Abstract: A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semiconductor material having a wider band gap than the first III-V semiconductor material. A dielectric region is present underlying the base region, emitter region and the collect region. The dielectric region has an inverted apex geometry. The sidewalls of dielectric region that extend to the apex of the inverted apex geometry are present on facets of a supporting substrate III-V semiconductor material having a {110} crystalline orientation.

公开(公告)号：US10546928B2

公开(公告)日：2020-01-28

申请号：US15834721

申请日：2017-12-07

Applicant: International Business Machines Corporation

Inventor： Pouya Hashemi ,  Karthik Balakrishnan ,  Alexander Reznicek ,  Mahmoud Khojasteh

IPC: H01L33/00 ,  H01L29/10 ,  H01L29/06 ,  H01L29/207 ,  H01L29/34 ,  H01L29/04 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/306

Abstract: A semiconductor structure that includes: a substrate, a twin vertical punch-through stopper layer structure connected to the substrate, and a plurality of nanosheets connected to and supported by the twin vertical punch-through stopper structure and isolated from the substrate by an insulating dielectric.

公开(公告)号：US10167443B2

公开(公告)日：2019-01-01

申请号：US15334863

申请日：2016-10-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Zeon Corporation

Inventor： Robert L. Bruce ,  Sebastian U. Engelmann ,  Eric A. Joseph ,  Mahmoud Khojasteh ,  Masahiro Nakamura ,  Satyavolu S. Papa Rao ,  Bang N. To ,  George G. Totir ,  Yu Zhu

IPC: C11D3/04 ,  C11D7/10 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  C11D11/00 ,  H01L29/66 ,  H01L21/3065

Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).

公开(公告)号：US09881793B2

公开(公告)日：2018-01-30

申请号：US14806921

申请日：2015-07-23

Applicant: International Business Machines Corporation

Inventor： Sebastian U. Engelmann ,  Mahmoud Khojasteh ,  Deborah A. Neumayer ,  John Papalia ,  Hsinyu Tsai

IPC: B44C1/22 ,  H01L21/033 ,  B81C1/00 ,  G03F7/09 ,  G03F7/00

CPC classification number: H01L21/0337 ,  B81C1/00396 ,  G03F7/0002 ,  G03F7/094

Abstract: A material stack is formed on the surface of a semiconductor substrate. The top layer of the material stack comprises at least an organic planarization layer. A neutral hard mask layer is formed on the top of the organic planarization layer. The neutral hard mask layer is neutral to the block copolymers used for direct self-assembly. A plurality of template etch stacks are then formed on top of the neutral hard mask layer. After formation of the template etch stacks, neutrality recovery is performed on the neutral hard mask layer and the top portions of the template etch stacks, the vertical sidewalls of the template etch stacks being substantially unaffected by the neutrality recovery. A template for DSA is thus obtained.

公开(公告)号：US09536731B2

公开(公告)日：2017-01-03

申请号：US14523515

申请日：2014-10-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Zeon Corporation

Inventor： Robert L. Bruce ,  Sebastian U. Engelmann ,  Eric A. Joseph ,  Mahmoud Khojasteh ,  Masahiro Nakamura ,  Satyavolu S. Papa Rao ,  Bang N. To ,  George G. Totir ,  Yu Zhu

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  C11D11/00 ,  C11D7/10

CPC classification number: C11D7/105 ,  C11D11/0047 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/28008 ,  H01L21/3065 ,  H01L21/31116 ,  H01L29/66575

Abstract: A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).

Abstract translation: 一种用于清洗蚀刻残留物的方法，其可以包括用含水镧系溶液处理蚀刻表面，其中所述含水镧系溶液除去包括大部分烃和至少一种选自碳，氧，氟的元素的蚀刻残渣 ，氮和硅。 在一个实例中，水溶液可以是硝酸铈铵（Ce（NH 4）（NO 3）），（CAN）。

公开(公告)号：US20150024989A1

公开(公告)日：2015-01-22

申请号：US14510381

申请日：2014-10-09

Applicant: International Business Machines Corporation

Inventor： Vishal Chhabra ,  Laertis Economikos ,  John A. Fitzsimmons ,  James Hannah ,  Mahmoud Khojasteh ,  Jennifer Muncy

IPC: H01L21/02 ,  C11D7/08 ,  C11D7/26

CPC classification number: H01L21/02057 ,  C11D3/042 ,  C11D3/2079 ,  C11D3/2086 ,  C11D7/08 ,  C11D7/265 ,  C11D7/267 ,  C11D11/0047

Abstract: Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.

Abstract translation: 用于在制造过程中清洁半导体器件或半导体工具的清洁溶液和工艺通常包括使半导体器件或半导体工具与不含氟化合物的酸性含水清洁溶液接触，所述酸性含水清洁溶液包含至少一种抗氧化剂和至少一种抗氧化剂 非氧化性酸。

公开(公告)号：US20190157433A1

公开(公告)日：2019-05-23

申请号：US15819622

申请日：2017-11-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Pouya Hashemi ,  Mahmoud Khojasteh ,  Tak H. Ning ,  Alexander Reznicek

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/205 ,  H01L29/66 ,  H01L21/306 ,  H01L21/762

Abstract: A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semiconductor material having a wider band gap than the first III-V semiconductor material. A dielectric region is present underlying the base region, emitter region and the collect region. The dielectric region has an inverted apex geometry. The sidewalls of dielectric region that extend to the apex of the inverted apex geometry are present on facets of a supporting substrate III-V semiconductor material having a {110} crystalline orientation.