公开(公告)号：US20220260397A1

公开(公告)日：2022-08-18

申请号：US17736204

申请日：2022-05-04

Applicant: Infineon Technologies AG

Inventor： Volker Strutz ,  Rainer Markus Schaller

IPC: G01D11/24 ,  G01R33/07

Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.

公开(公告)号：US11289353B2

公开(公告)日：2022-03-29

申请号：US16158438

申请日：2018-10-12

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Horst Theuss

IPC: H01L21/673 ,  H01L23/049 ,  H01L23/20 ,  H01L21/67 ,  B81C1/00

Abstract: A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

公开(公告)号：US10180468B2

公开(公告)日：2019-01-15

申请号：US15176240

申请日：2016-06-08

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Goran Keser ,  Manuel Harrant

IPC: G01R33/07 ,  G01R33/09 ,  H01L25/04 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/12

Abstract: A chip package, a chip package system, a method of manufacturing a chip package, and a method of operating a chip package including: a first sensor configured to measure a magnetic field component up to a maximum magnetic field value; a second sensor configured to measure the magnetic field component beyond the maximum magnetic field value; and a circuit coupled to the first sensor and the second sensor and configured to receive at least one sensor signal from at least one of the first sensor and the second sensor, wherein the circuit is further configured to select the first sensor or the second sensor to measure the magnetic field component based on the received sensor signal.

公开(公告)号：US20170256515A1

公开(公告)日：2017-09-07

申请号：US15057481

申请日：2016-03-01

Applicant: Infineon Technologies AG

Inventor： Volker Strutz ,  Rainer Markus Schaller ,  Franz-Peter Kalz

IPC: H01L23/00 ,  H01L27/22

CPC classification number: H01L24/29 ,  G01R33/0052 ,  H01L23/49503 ,  H01L23/49506 ,  H01L23/4951 ,  H01L23/49513 ,  H01L23/49548 ,  H01L23/60 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L27/22 ,  H01L2224/2929 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/29561 ,  H01L2224/2957 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/30101 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/0665

Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 Ω·cm and 1010 Ω·cm.

公开(公告)号：US12196825B2

公开(公告)日：2025-01-14

申请号：US18056490

申请日：2022-11-17

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Rainer Markus Schaller

IPC: G01R33/07 ,  G01R33/02 ,  G01R33/09

Abstract: A sensor device contains a first magnetic field sensor chip having a first sensor element. The first magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the first sensor element. The sensor device contains a second magnetic field sensor chip having a second sensor element. The second magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the second sensor element. The sensor device contains a current conductor configured to carry a measurement current that induces a magnetic field at the locations of the sensor elements. The magnetic field sensor chips and the current conductor are arranged relative to one another in such a way that an influence of a homogeneous magnetic stray field on the first components is compensated for upon difference formation or summation applied to the first components.

公开(公告)号：US12078615B2

公开(公告)日：2024-09-03

申请号：US18322755

申请日：2023-05-24

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Matthias Eberl ,  Simon Gassner ,  Franz Jost ,  Stefan Kolb

IPC: G01N29/24 ,  G01N33/00

CPC classification number: G01N29/2425 ,  G01N33/0004

Abstract: A photoacoustic detector unit comprises a housing having an opening, and also a photoacoustic transducer designed to convert optical radiation into at least one from a pressure signal or a heat signal. The photoacoustic transducer covers the opening of the housing, such that the photoacoustic transducer and the housing form an acoustically tight cavity. A pressure pick-up is arranged in the acoustically tight cavity.

公开(公告)号：US11895930B2

公开(公告)日：2024-02-06

申请号：US17555809

申请日：2021-12-20

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Volker Strutz

IPC: H10N52/80 ,  H01L23/31 ,  H01L23/00 ,  G01R15/20 ,  G01R19/00 ,  H01L23/495 ,  H10N50/01 ,  H10N50/80 ,  H10N52/00 ,  H10N52/01

CPC classification number: H10N52/80 ,  G01R15/202 ,  G01R15/205 ,  G01R19/0092 ,  H01L23/3121 ,  H01L23/49541 ,  H01L24/48 ,  H01L24/85 ,  H10N50/01 ,  H10N50/80 ,  H10N52/00 ,  H10N52/01 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48177 ,  H01L2224/48247

Abstract: A current sensor package, comprises a current path and a sensing device. The sensing device is spaced from the current path, and the sensing device is configured for sensing a magnetic field generated by a current flowing through the current path. Further, the sensing device comprises a sensor element. The sensing device is electrically connected to a conductive trace. An encapsulant extends continuously between the current path and the sensing device.

公开(公告)号：US11573204B2

公开(公告)日：2023-02-07

申请号：US17116029

申请日：2020-12-09

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Jochen Dangelmaier ,  Matthias Eberl ,  Simon Gassner ,  Franz Jost ,  Stefan Kolb ,  Horst Theuss

IPC: G01N21/17 ,  G01N29/02 ,  B81B3/00

Abstract: A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.

公开(公告)号：US11493538B2

公开(公告)日：2022-11-08

申请号：US16947910

申请日：2020-08-24

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Juergen Hoegerl ,  Volker Strutz

IPC: G01R15/20 ,  G01R19/00

Abstract: A sensor device comprises a dielectric substrate, a busbar mechanically connected to the dielectric substrate, a cavity formed in the dielectric substrate, and a sensor chip arranged in the cavity, wherein the sensor chip is designed to detect a magnetic field induced by an electric current flowing through the busbar, wherein in an orthogonal projection of the sensor chip onto the busbar, the sensor chip at least partly overlaps the busbar.

公开(公告)号：US11385301B2

公开(公告)日：2022-07-12

申请号：US16948343

申请日：2020-09-14

Applicant: Infineon Technologies AG

Inventor： Juergen Hoegerl ,  Rainer Markus Schaller ,  Volker Strutz

IPC: G01R19/00 ,  G01R33/00 ,  G01R33/07 ,  G01R33/09

Abstract: A sensor device comprises a busbar, a dielectric arranged on the busbar, and a sensor chip arranged on the dielectric, wherein the sensor chip is designed to measure a magnetic field induced by an electric current flowing through the busbar, wherein the surface of the dielectric facing toward the busbar is spaced from the busbar in an area along the entire periphery of the dielectric.