CHIP SCALE THIN 3D DIE STACKED PACKAGE
    11.
    发明申请

    公开(公告)号:US20200006293A1

    公开(公告)日:2020-01-02

    申请号:US16024700

    申请日:2018-06-29

    Abstract: Embodiments disclosed herein include an electronics package comprising stacked dies. In an embodiment, the electronics package comprises a first die that includes a plurality of first conductive interconnects extending out from a first surface of the first die. In an embodiment, the first die further comprises a keep out zone. In an embodiment, the electronic package may also comprise a second die. In an embodiment, the second die is positioned entirely within a perimeter of the keep out zone of the first die. In an embodiment, a first surface of the second die faces the first surface of the first die.

    NOVEL WAFER LEVEL CHIP SCALE PACKAGE (WLCSP), FLIP-CHIP CHIP SCALE PACKAGE (FCCSP), AND FAN OUT SHIELDING CONCEPTS

    公开(公告)号:US20200098698A1

    公开(公告)日:2020-03-26

    申请号:US16143212

    申请日:2018-09-26

    Abstract: Embodiments include semiconductor packages, such as wafer level chip scale packages (WLCSPs), flip chip chip scale packages (FCCSPs), and fan out packages. The WLCSP includes a first doped region on a second doped region, a dielectric on a redistribution layer, where the dielectric is between the redistribution layer and doped regions. The WLCSP also includes a shield over the doped regions, the dielectric, and the redistribution layer, where the shield includes a plurality of surfaces, and at least one of the plurality of surfaces of the shield is on a top surface of the first doped region. The WLCSP may have interconnects coupled to the second doped region and redistribution layer. The shield may be a conductive shield that is coupled to ground, and the shield may be directly coupled to the redistribution layer and first doped region. The first and second doped regions may include highly doped n-type materials.

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