公开(公告)号：US20060130745A1

公开(公告)日：2006-06-22

申请号：US11352003

申请日：2006-02-10

Applicant: Jagdish Narayan

Inventor： Jagdish Narayan

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02617

Abstract: A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature Tgrowth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature Tanneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness hc. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

公开(公告)号：US20060016388A1

公开(公告)日：2006-01-26

申请号：US11038008

申请日：2005-01-18

Applicant: Jagdish Narayan

Inventor： Jagdish Narayan

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02617

Abstract: A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature Tgrowth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature Tanneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness hc. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

Abstract translation: 在衬底上形成外延膜的方法包括在温度T生长时在衬底上生长膜的初始层，所述初始层具有厚度h，并将膜的初始层退火 温度T退火，从而松弛初始层，其中膜的初始层的厚度h大于临界厚度h C c。 该方法还包括在退火之后在初始层上生长外延膜的附加层。 在一些实施例中，该方法还包括生长包括至少一个非晶岛的膜层。

公开(公告)号：US06955985B2

公开(公告)日：2005-10-18

申请号：US10608780

申请日：2003-06-27

Applicant: Jagdish Narayan

Inventor： Jagdish Narayan

IPC: C30B25/18 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/22 ,  H01L21/36 ,  H01L21/38 ,  H01L21/44

CPC classification number: C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02617

Abstract: A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature Tgrowth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature Tanneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness hc. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

Abstract translation: 在衬底上形成外延膜的方法包括在温度T生长时在衬底上生长膜的初始层，所述初始层具有厚度h，并将膜的初始层退火 温度T退火，从而松弛初始层，其中膜的初始层的厚度h大于临界厚度h C c。 该方法还包括在退火之后在初始层上生长外延膜的附加层。 在一些实施例中，该方法还包括生长包括至少一个非晶岛的膜层。

公开(公告)号：US06881983B2

公开(公告)日：2005-04-19

申请号：US10207649

申请日：2002-07-26

Applicant: Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

Inventor： Jagdish Narayan ,  Jinlin Ye ,  Schang-Jing Hon ,  Ken Fox ,  Jyh Chia Chen ,  Hong K. Choi ,  John C. C. Fan

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/10 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/106 ,  H01S5/3425 ,  H01S5/34333

Abstract: An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

公开(公告)号：US5221411A

公开(公告)日：1993-06-22

申请号：US682586

申请日：1991-04-08

Applicant: Jagdish Narayan

Inventor： Jagdish Narayan

IPC: C30B13/00

CPC classification number: C30B13/00

Abstract: Disclosed is a method for the development of diamond thin films on a non-diamond substrate. The method comprises implanting carbon ions in a lattice-plane matched or lattice matched substrate. The implanted region of the substrate is then annealed to produce a diamond thin film on the non-diamond substrate. Also disclosed are the diamond thin films on non-diamond lattice-plane matched substrates produced by this method. Preferred substrates are lattice and plane matched to diamond such as copper, a preferred implanting method is ion implantation, and a preferred annealing method is pulsed laser annealing.

Abstract translation: 公开了一种在非金刚石基底上开发金刚石薄膜的方法。 该方法包括将碳离子注入到晶格平面匹配或晶格匹配的衬底中。 然后将衬底的注入区域退火以在非金刚石衬底上产生金刚石薄膜。 还公开了通过该方法制造的非金刚石晶格平面匹配衬底上的金刚石薄膜。 优选的衬底是与金刚石（例如铜）晶格和平面匹配的，优选的注入方法是离子注入，优选的退火方法是脉冲激光退火。

公开(公告)号：US07803717B2

公开(公告)日：2010-09-28

申请号：US10970773

申请日：2004-10-21

Applicant: Thomas A. Rawdanowicz ,  Jagdish Narayan

Inventor： Thomas A. Rawdanowicz ,  Jagdish Narayan

IPC: H01L21/31

CPC classification number: C30B25/18 ,  C30B23/02 ,  C30B29/40 ,  H01L21/8258

Abstract: Epitaxial gallium nitride is grown on a silicon substrate while reducing or suppressing the formation of a buffer layer. The gallium nitride may be grown directly on the silicon substrate, for example using domain epitaxy. Alternatively, less than one complete monolayer of silicon nitride may be formed between the silicon and the gallium nitride. Subsequent to formation of the gallium nitride, an interfacial layer of silicon nitride may be formed between the silicon and the gallium nitride.

Abstract translation: 在减少或抑制缓冲层的形成的同时，在硅衬底上生长外延氮化镓。 可以直接在硅衬底上生长氮化镓，例如使用畴外延。 或者，可以在硅和氮化镓之间形成少于一个完整的氮化硅单层。 在形成氮化镓之后，可以在硅和氮化镓之间形成氮化硅的界面层。

公开(公告)号：US20090042751A1

公开(公告)日：2009-02-12

申请号：US11979529

申请日：2007-11-05

Applicant: Jagdish Narayan

Inventor： Jagdish Narayan

IPC: C10M169/04

CPC classification number: C10M141/00 ,  C10M2201/041 ,  C10M2201/05 ,  C10M2201/061 ,  C10N2220/082 ,  C10N2230/06 ,  C10N2230/54 ,  C10N2240/10 ,  Y10S977/773 ,  C10M2201/06 ,  C10N2210/03 ,  C10M2201/105

Abstract: A combination nano and microparticle treatment for engines enhances fuel efficiency and life duration and reduces exhaust emissions. The nanoparticles are chosen from a class of hard materials, preferably alumina, silica, ceria, titania, diamond, cubic boron nitride, and molybdenum oxide. The microparticles are chosen from a class of materials of layered structures, preferably graphite, hexagonal boron nitride, magnesium silicates (talc) and molybdenum disulphide. The nano-micro combination can be chosen from the same materials. This group of materials includes zinc oxide, copper oxide, molybdenum oxide, graphite, talc, and hexagonal boron nitride. The ratio of nano to micro in the proposed combination varies with the engine characteristics and driving conditions. A laser synthesis method can be used to disperse nanoparticles in engine oil or other compatible medium. The nano and microparticle combination when used in engine oil can effect surface morphology changes such as smoothening and polishing of engine wear surfaces, improvement in coefficient of friction, and fuel efficiency enhancement up to 35% in a variety of vehicles (cars and trucks) under actual road conditions, and reduction in exhaust emissions up to 90%.

Abstract translation: 用于发动机的纳米和微粒组合治疗可以提高燃油效率和使用寿命，并减少废气排放。 纳米颗粒选自一类硬质材料，优选氧化铝，二氧化硅，二氧化铈，二氧化钛，金刚石，立方氮化硼和氧化钼。 微粒选自分层结构的材料，优选石墨，六方氮化硼，硅酸镁（滑石）和二硫化钼。 纳米微组合可以从相同的材料中选择。 该组材料包括氧化锌，氧化铜，氧化钼，石墨，滑石和六方氮化硼。 所提出的组合中的纳米与微米的比值随发动机特性和驾驶条件而变化。 可以使用激光合成方法将纳米颗粒分散在发动机机油或其它兼容介质中。 在发动机油中使用的纳米和微粒组合可以影响表面形态变化，如发动机磨损表面的平滑和抛光，摩擦系数的提高和燃油效率的提高，在各种车辆（汽车和卡车）下可达35％ 实际路况，废气排放量减少达90％。

公开(公告)号：US20060266442A1

公开(公告)日：2006-11-30

申请号：US11499352

申请日：2006-08-04

Applicant: Jagdish Narayan ,  Ashutosh Tiwari

Inventor： Jagdish Narayan ,  Ashutosh Tiwari

IPC: C22C21/00 ,  C23C4/08

CPC classification number: C23C28/04 ,  B82Y30/00 ,  B82Y40/00 ,  C23C14/024 ,  C23C14/0688 ,  C23C14/28

Abstract: Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and/or differences in the Gibb's free energy of the nanodot materials and matrix materials.

Abstract translation: 纳米结构和制备具有自组装纳米点阵列的纳米结构的方法，其中纳米点由于纳米棒材料的自由能而自组装在基体材料中和/或纳米点材料和基质材料的吉布斯自由能的差异。

公开(公告)号：US07105118B2

公开(公告)日：2006-09-12

申请号：US10723842

申请日：2003-11-26

Applicant: Jagdish Narayan ,  Ashutosh Tiwari

Inventor： Jagdish Narayan ,  Ashutosh Tiwari

IPC: B82B3/00 ,  H01L21/4763

CPC classification number: H01F41/20 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/855 ,  H01F1/0063 ,  H01F1/009 ,  H01L29/127

Abstract: Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and/or differences in the Gibb's free energy of the nanodot materials and matrix materials.

公开(公告)号：US5453153A

公开(公告)日：1995-09-26

申请号：US849632

申请日：1992-03-05

Applicant: John C. C. Fan ,  Paul M. Zavracky ,  Jagdish Narayan ,  Lisa P. Allen ,  Duy-Phach Vu ,  Ngwe K. Cheong

Inventor： John C. C. Fan ,  Paul M. Zavracky ,  Jagdish Narayan ,  Lisa P. Allen ,  Duy-Phach Vu ,  Ngwe K. Cheong

IPC: H01L21/20 ,  C30B13/00

CPC classification number: H01L21/2022

Abstract: An improved method of zone-melting recrystallizing of a silicon film on an insulator in which the film is implanted and annealed to achieve a reduction of the density of defects within the film.

Abstract translation: 在绝缘体上进行区域熔融重结晶的改进方法，其中膜被注入和退火以实现薄膜内的缺陷密度的降低。